NL6801128A - - Google Patents

Info

Publication number
NL6801128A
NL6801128A NL6801128A NL6801128A NL6801128A NL 6801128 A NL6801128 A NL 6801128A NL 6801128 A NL6801128 A NL 6801128A NL 6801128 A NL6801128 A NL 6801128A NL 6801128 A NL6801128 A NL 6801128A
Authority
NL
Netherlands
Application number
NL6801128A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6801128A publication Critical patent/NL6801128A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
NL6801128A 1967-01-26 1968-01-25 NL6801128A (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3879/67A GB1140822A (en) 1967-01-26 1967-01-26 Semi-conductor elements

Publications (1)

Publication Number Publication Date
NL6801128A true NL6801128A (cs) 1968-07-29

Family

ID=9766611

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6801128A NL6801128A (cs) 1967-01-26 1968-01-25

Country Status (5)

Country Link
US (1) US3538398A (cs)
DE (1) DE1639069A1 (cs)
FR (1) FR1550640A (cs)
GB (1) GB1140822A (cs)
NL (1) NL6801128A (cs)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5631898B2 (cs) * 1974-01-11 1981-07-24
JPS5478092A (en) * 1977-12-05 1979-06-21 Hitachi Ltd Lateral semiconductor device
EP0018487B1 (en) * 1979-03-22 1983-06-29 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
DE3012185A1 (de) * 1980-03-28 1981-10-08 Siemens AG, 1000 Berlin und 8000 München Feldeffekttransistor
US5229642A (en) * 1980-09-01 1993-07-20 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
US5371411A (en) * 1980-09-01 1994-12-06 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
US5552639A (en) * 1980-09-01 1996-09-03 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
JPS5745259A (en) * 1980-09-01 1982-03-15 Hitachi Ltd Resin sealing type semiconductor device
JPS57201062A (en) * 1981-06-05 1982-12-09 Nec Corp Semiconductor device
JPS5939066A (ja) * 1982-08-27 1984-03-03 Hitachi Ltd 半導体集積回路
NL8204105A (nl) * 1982-10-25 1984-05-16 Philips Nv Halfgeleiderinrichting.
GB2165090A (en) * 1984-09-26 1986-04-03 Philips Electronic Associated Improving the field distribution in high voltage semiconductor devices
JP2701502B2 (ja) * 1990-01-25 1998-01-21 日産自動車株式会社 半導体装置
DE19818296C1 (de) * 1998-04-23 1999-08-26 Siemens Ag Hochspannungs-Randabschluß für ein Halbleiterbauelement
JP2003509867A (ja) 1999-09-16 2003-03-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1294558B (de) * 1961-06-07 1969-05-08 Westinghouse Electric Corp Hochspannungsgleichrichter und Verfahren zum Herstellen
NL302804A (cs) * 1962-08-23 1900-01-01
US3271640A (en) * 1962-10-11 1966-09-06 Fairchild Camera Instr Co Semiconductor tetrode
US3338758A (en) * 1964-12-31 1967-08-29 Fairchild Camera Instr Co Surface gradient protected high breakdown junctions
US3394037A (en) * 1965-05-28 1968-07-23 Motorola Inc Method of making a semiconductor device by masking and diffusion
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices

Also Published As

Publication number Publication date
DE1639069A1 (de) 1970-06-25
US3538398A (en) 1970-11-03
GB1140822A (en) 1969-01-22
FR1550640A (cs) 1968-12-20

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