NL6713869A - - Google Patents
Info
- Publication number
- NL6713869A NL6713869A NL6713869A NL6713869A NL6713869A NL 6713869 A NL6713869 A NL 6713869A NL 6713869 A NL6713869 A NL 6713869A NL 6713869 A NL6713869 A NL 6713869A NL 6713869 A NL6713869 A NL 6713869A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58686866A | 1966-10-14 | 1966-10-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6713869A true NL6713869A (en) | 1968-04-16 |
Family
ID=24347423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6713869A NL6713869A (en) | 1966-10-14 | 1967-10-12 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3511610A (en) |
BE (1) | BE705114A (en) |
DE (1) | DE1619966C3 (en) |
GB (1) | GB1157224A (en) |
NL (1) | NL6713869A (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3798007A (en) * | 1969-12-05 | 1974-03-19 | Ibm | Method and apparatus for producing large diameter monocrystals |
DE2821481C2 (en) * | 1978-05-17 | 1985-12-05 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Device for pulling high-purity semiconductor rods from the melt |
US4659421A (en) * | 1981-10-02 | 1987-04-21 | Energy Materials Corporation | System for growth of single crystal materials with extreme uniformity in their structural and electrical properties |
JPS5913693A (en) * | 1982-07-15 | 1984-01-24 | Toshiba Corp | Growth device for compound semiconductor single crystal |
DE3414290A1 (en) * | 1984-04-14 | 1985-10-24 | Leybold-Heraeus GmbH, 5000 Köln | CRYSTAL HOLDER |
JPS6163593A (en) * | 1984-09-05 | 1986-04-01 | Toshiba Corp | Installation for production of single crystal of compound semiconductor |
US4751059A (en) * | 1986-12-05 | 1988-06-14 | Westinghouse Electric Corp. | Apparatus for growing dendritic web crystals of constant width |
US5004519A (en) * | 1986-12-12 | 1991-04-02 | Texas Instruments Incorporated | Radiation heat shield for silicon melt-in manufacturing of single crystal silicon |
JPH0639352B2 (en) * | 1987-09-11 | 1994-05-25 | 信越半導体株式会社 | Single crystal manufacturing equipment |
DE3733487C2 (en) * | 1987-10-03 | 1997-08-14 | Leybold Ag | Device for pulling single crystals |
DE4122120A1 (en) * | 1991-07-04 | 1993-01-07 | Leybold Ag | Improved seal design for crystal removal lock of a reactor - consists of protecting the seal from direct radiation from crystal and avoidance of shear action in the closure |
JP3687166B2 (en) * | 1995-12-28 | 2005-08-24 | 信越半導体株式会社 | Rectifying cylinder lifting / lowering method of single crystal pulling apparatus and single crystal pulling apparatus |
US5932007A (en) * | 1996-06-04 | 1999-08-03 | General Signal Technology Corporation | Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system |
US5904768A (en) * | 1996-10-15 | 1999-05-18 | Memc Electronic Materials, Inc. | Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic |
CN102449208B (en) * | 2009-07-17 | 2014-12-10 | 丰田自动车株式会社 | Process for producing SiC single crystal |
DE102018131944A1 (en) * | 2018-12-12 | 2020-06-18 | VON ARDENNE Asset GmbH & Co. KG | Evaporation arrangement and method |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2890139A (en) * | 1956-12-10 | 1959-06-09 | Shockley William | Semi-conductive material purification method and apparatus |
US3206286A (en) * | 1959-07-23 | 1965-09-14 | Westinghouse Electric Corp | Apparatus for growing crystals |
US3212858A (en) * | 1963-01-28 | 1965-10-19 | Westinghouse Electric Corp | Apparatus for producing crystalline semiconductor material |
US3251655A (en) * | 1963-09-27 | 1966-05-17 | Westinghouse Electric Corp | Apparatus for producing crystalline semiconductor material |
US3291574A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Semiconductor crystal growth from a domical projection |
US3291571A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Crystal growth |
US3291650A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Control of crystal size |
US3342559A (en) * | 1964-04-27 | 1967-09-19 | Westinghouse Electric Corp | Apparatus for producing dendrites |
-
1966
- 1966-10-14 US US586868A patent/US3511610A/en not_active Expired - Lifetime
-
1967
- 1967-09-28 GB GB44110/67A patent/GB1157224A/en not_active Expired
- 1967-10-12 NL NL6713869A patent/NL6713869A/xx unknown
- 1967-10-13 BE BE705114D patent/BE705114A/xx unknown
- 1967-10-13 DE DE1619966A patent/DE1619966C3/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
BE705114A (en) | 1968-02-15 |
US3511610A (en) | 1970-05-12 |
DE1619966B2 (en) | 1972-06-08 |
GB1157224A (en) | 1969-07-02 |
DE1619966A1 (en) | 1970-07-30 |
DE1619966C3 (en) | 1973-01-04 |