NL6713869A - - Google Patents

Info

Publication number
NL6713869A
NL6713869A NL6713869A NL6713869A NL6713869A NL 6713869 A NL6713869 A NL 6713869A NL 6713869 A NL6713869 A NL 6713869A NL 6713869 A NL6713869 A NL 6713869A NL 6713869 A NL6713869 A NL 6713869A
Authority
NL
Netherlands
Application number
NL6713869A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6713869A publication Critical patent/NL6713869A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL6713869A 1966-10-14 1967-10-12 NL6713869A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58686866A 1966-10-14 1966-10-14

Publications (1)

Publication Number Publication Date
NL6713869A true NL6713869A (en) 1968-04-16

Family

ID=24347423

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6713869A NL6713869A (en) 1966-10-14 1967-10-12

Country Status (5)

Country Link
US (1) US3511610A (en)
BE (1) BE705114A (en)
DE (1) DE1619966C3 (en)
GB (1) GB1157224A (en)
NL (1) NL6713869A (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3798007A (en) * 1969-12-05 1974-03-19 Ibm Method and apparatus for producing large diameter monocrystals
DE2821481C2 (en) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Device for pulling high-purity semiconductor rods from the melt
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
JPS5913693A (en) * 1982-07-15 1984-01-24 Toshiba Corp Growth device for compound semiconductor single crystal
DE3414290A1 (en) * 1984-04-14 1985-10-24 Leybold-Heraeus GmbH, 5000 Köln CRYSTAL HOLDER
JPS6163593A (en) * 1984-09-05 1986-04-01 Toshiba Corp Installation for production of single crystal of compound semiconductor
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
US5004519A (en) * 1986-12-12 1991-04-02 Texas Instruments Incorporated Radiation heat shield for silicon melt-in manufacturing of single crystal silicon
JPH0639352B2 (en) * 1987-09-11 1994-05-25 信越半導体株式会社 Single crystal manufacturing equipment
DE3733487C2 (en) * 1987-10-03 1997-08-14 Leybold Ag Device for pulling single crystals
DE4122120A1 (en) * 1991-07-04 1993-01-07 Leybold Ag Improved seal design for crystal removal lock of a reactor - consists of protecting the seal from direct radiation from crystal and avoidance of shear action in the closure
JP3687166B2 (en) * 1995-12-28 2005-08-24 信越半導体株式会社 Rectifying cylinder lifting / lowering method of single crystal pulling apparatus and single crystal pulling apparatus
US5932007A (en) * 1996-06-04 1999-08-03 General Signal Technology Corporation Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
CN102449208B (en) * 2009-07-17 2014-12-10 丰田自动车株式会社 Process for producing SiC single crystal
DE102018131944A1 (en) * 2018-12-12 2020-06-18 VON ARDENNE Asset GmbH & Co. KG Evaporation arrangement and method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2890139A (en) * 1956-12-10 1959-06-09 Shockley William Semi-conductive material purification method and apparatus
US3206286A (en) * 1959-07-23 1965-09-14 Westinghouse Electric Corp Apparatus for growing crystals
US3212858A (en) * 1963-01-28 1965-10-19 Westinghouse Electric Corp Apparatus for producing crystalline semiconductor material
US3251655A (en) * 1963-09-27 1966-05-17 Westinghouse Electric Corp Apparatus for producing crystalline semiconductor material
US3291574A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Semiconductor crystal growth from a domical projection
US3291571A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Crystal growth
US3291650A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Control of crystal size
US3342559A (en) * 1964-04-27 1967-09-19 Westinghouse Electric Corp Apparatus for producing dendrites

Also Published As

Publication number Publication date
BE705114A (en) 1968-02-15
US3511610A (en) 1970-05-12
DE1619966B2 (en) 1972-06-08
GB1157224A (en) 1969-07-02
DE1619966A1 (en) 1970-07-30
DE1619966C3 (en) 1973-01-04

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