NL6700241A - - Google Patents

Info

Publication number
NL6700241A
NL6700241A NL6700241A NL6700241A NL6700241A NL 6700241 A NL6700241 A NL 6700241A NL 6700241 A NL6700241 A NL 6700241A NL 6700241 A NL6700241 A NL 6700241A NL 6700241 A NL6700241 A NL 6700241A
Authority
NL
Netherlands
Application number
NL6700241A
Other versions
NL139417B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US26135A external-priority patent/US3130377A/en
Application filed filed Critical
Publication of NL6700241A publication Critical patent/NL6700241A/xx
Publication of NL139417B publication Critical patent/NL139417B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
NL676700241A 1960-05-02 1967-01-06 Transistor voorzien van een epitaxiale halfgeleiderlaag op een monokrisstallijne drager. NL139417B (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US26135A US3130377A (en) 1960-05-02 1960-05-02 Semiconductor integrated circuit utilizing field-effect transistors
US8725861A 1961-02-06 1961-02-06
NL274363 1962-02-05
US377710A US3211972A (en) 1960-05-02 1964-06-24 Semiconductor networks

Publications (2)

Publication Number Publication Date
NL6700241A true NL6700241A (enExample) 1967-03-28
NL139417B NL139417B (nl) 1973-07-16

Family

ID=27483670

Family Applications (1)

Application Number Title Priority Date Filing Date
NL676700241A NL139417B (nl) 1960-05-02 1967-01-06 Transistor voorzien van een epitaxiale halfgeleiderlaag op een monokrisstallijne drager.

Country Status (1)

Country Link
NL (1) NL139417B (enExample)

Also Published As

Publication number Publication date
NL139417B (nl) 1973-07-16

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Legal Events

Date Code Title Description
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: TEXAS

V4 Discontinued because of reaching the maximum lifetime of a patent