NL6617594A - - Google Patents

Info

Publication number
NL6617594A
NL6617594A NL6617594A NL6617594A NL6617594A NL 6617594 A NL6617594 A NL 6617594A NL 6617594 A NL6617594 A NL 6617594A NL 6617594 A NL6617594 A NL 6617594A NL 6617594 A NL6617594 A NL 6617594A
Authority
NL
Netherlands
Application number
NL6617594A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6617594A publication Critical patent/NL6617594A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00Generation of oscillations using transit-time effects
    • H03B9/12Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/145Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
NL6617594A 1965-12-30 1966-12-14 NL6617594A (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0101271 1965-12-30
DES0103766 1966-05-12

Publications (1)

Publication Number Publication Date
NL6617594A true NL6617594A (https=) 1967-07-03

Family

ID=25998335

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6617594A NL6617594A (https=) 1965-12-30 1966-12-14

Country Status (7)

Country Link
US (1) US3483441A (https=)
AT (1) AT264592B (https=)
CH (1) CH472783A (https=)
DE (2) DE1514655A1 (https=)
GB (1) GB1154049A (https=)
NL (1) NL6617594A (https=)
SE (1) SE344850B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5221360B1 (https=) * 1971-02-19 1977-06-09
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
US3986142A (en) * 1974-03-04 1976-10-12 Raytheon Company Avalanche semiconductor amplifier
US3904449A (en) * 1974-05-09 1975-09-09 Bell Telephone Labor Inc Growth technique for high efficiency gallium arsenide impatt diodes
CH580339A5 (https=) * 1974-12-23 1976-09-30 Bbc Brown Boveri & Cie
US4326211A (en) * 1977-09-01 1982-04-20 U.S. Philips Corporation N+PP-PP-P+ Avalanche photodiode
DE2833319C2 (de) * 1978-07-29 1982-10-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Kapazitätsdiode
US4226648A (en) * 1979-03-16 1980-10-07 Bell Telephone Laboratories, Incorporated Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2899646A (en) * 1959-08-11 Tread
US3319138A (en) * 1962-11-27 1967-05-09 Texas Instruments Inc Fast switching high current avalanche transistor
US3345221A (en) * 1963-04-10 1967-10-03 Motorola Inc Method of making a semiconductor device having improved pn junction avalanche characteristics
US3293010A (en) * 1964-01-02 1966-12-20 Motorola Inc Passivated alloy diode
USB433088I5 (https=) * 1965-02-16

Also Published As

Publication number Publication date
US3483441A (en) 1969-12-09
GB1154049A (en) 1969-06-04
CH472783A (de) 1969-05-15
AT264592B (de) 1968-09-10
SE344850B (https=) 1972-05-02
DE1514655A1 (de) 1969-08-28
DE1516833A1 (de) 1969-07-24
DE1516833C3 (de) 1974-06-12
DE1516833B2 (de) 1973-11-15

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