NL6616664A - - Google Patents
Info
- Publication number
- NL6616664A NL6616664A NL6616664A NL6616664A NL6616664A NL 6616664 A NL6616664 A NL 6616664A NL 6616664 A NL6616664 A NL 6616664A NL 6616664 A NL6616664 A NL 6616664A NL 6616664 A NL6616664 A NL 6616664A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H10P95/50—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
-
- H10P95/00—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7456765 | 1965-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6616664A true NL6616664A (en:Method) | 1967-05-31 |
Family
ID=13550905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6616664A NL6616664A (en:Method) | 1965-11-30 | 1966-11-25 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3544395A (en:Method) |
| DE (1) | DE1564373C3 (en:Method) |
| FR (1) | FR1508395A (en:Method) |
| GB (1) | GB1161517A (en:Method) |
| NL (1) | NL6616664A (en:Method) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3634151A (en) * | 1970-05-01 | 1972-01-11 | Matsushita Electric Industrial Co Ltd | Method for making semiconductor devices |
| FR2091940B1 (en:Method) * | 1970-05-28 | 1973-05-25 | Matsushita Electric Industrial Co Ltd | |
| US3935585A (en) * | 1972-08-22 | 1976-01-27 | Korovin Stanislav Konstantinov | Semiconductor diode with voltage-dependent capacitance |
| US3902925A (en) * | 1973-10-30 | 1975-09-02 | Gen Electric | Deep diode device and method |
| US3897277A (en) * | 1973-10-30 | 1975-07-29 | Gen Electric | High aspect ratio P-N junctions by the thermal gradient zone melting technique |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2847336A (en) * | 1956-01-30 | 1958-08-12 | Rca Corp | Processing semiconductor devices |
| US2932594A (en) * | 1956-09-17 | 1960-04-12 | Rca Corp | Method of making surface alloy junctions in semiconductor bodies |
| US2943005A (en) * | 1957-01-17 | 1960-06-28 | Rca Corp | Method of alloying semiconductor material |
| US3009841A (en) * | 1959-03-06 | 1961-11-21 | Westinghouse Electric Corp | Preparation of semiconductor devices having uniform junctions |
| US3075892A (en) * | 1959-09-15 | 1963-01-29 | Westinghouse Electric Corp | Process for making semiconductor devices |
| US3232800A (en) * | 1961-12-16 | 1966-02-01 | Nippon Electric Co | Method of making semiconductor devices by forming a damage layer on a surface of a semiconductor body and then alloying through said damage layer |
| US3416979A (en) * | 1964-08-31 | 1968-12-17 | Matsushita Electric Industrial Co Ltd | Method of making a variable capacitance silicon diode with hyper abrupt junction |
| BE671953A (en:Method) * | 1964-11-05 |
-
1966
- 1966-11-15 US US594601A patent/US3544395A/en not_active Expired - Lifetime
- 1966-11-25 NL NL6616664A patent/NL6616664A/xx unknown
- 1966-11-29 FR FR85391A patent/FR1508395A/fr not_active Expired
- 1966-11-29 GB GB53407/66A patent/GB1161517A/en not_active Expired
- 1966-11-29 DE DE1564373A patent/DE1564373C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1161517A (en) | 1969-08-13 |
| DE1564373B2 (de) | 1973-03-01 |
| US3544395A (en) | 1970-12-01 |
| FR1508395A (fr) | 1968-01-05 |
| DE1564373C3 (de) | 1978-09-21 |
| DE1564373A1 (de) | 1972-02-17 |