NL6616664A - - Google Patents
Info
- Publication number
- NL6616664A NL6616664A NL6616664A NL6616664A NL6616664A NL 6616664 A NL6616664 A NL 6616664A NL 6616664 A NL6616664 A NL 6616664A NL 6616664 A NL6616664 A NL 6616664A NL 6616664 A NL6616664 A NL 6616664A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7456765 | 1965-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6616664A true NL6616664A (de) | 1967-05-31 |
Family
ID=13550905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6616664A NL6616664A (de) | 1965-11-30 | 1966-11-25 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3544395A (de) |
| DE (1) | DE1564373C3 (de) |
| FR (1) | FR1508395A (de) |
| GB (1) | GB1161517A (de) |
| NL (1) | NL6616664A (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3634151A (en) * | 1970-05-01 | 1972-01-11 | Matsushita Electric Ind Co Ltd | Method for making semiconductor devices |
| FR2091940B1 (de) * | 1970-05-28 | 1973-05-25 | Matsushita Electric Ind Co Ltd | |
| US3935585A (en) * | 1972-08-22 | 1976-01-27 | Korovin Stanislav Konstantinov | Semiconductor diode with voltage-dependent capacitance |
| US3902925A (en) * | 1973-10-30 | 1975-09-02 | Gen Electric | Deep diode device and method |
| US3897277A (en) * | 1973-10-30 | 1975-07-29 | Gen Electric | High aspect ratio P-N junctions by the thermal gradient zone melting technique |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2847336A (en) * | 1956-01-30 | 1958-08-12 | Rca Corp | Processing semiconductor devices |
| US2932594A (en) * | 1956-09-17 | 1960-04-12 | Rca Corp | Method of making surface alloy junctions in semiconductor bodies |
| US2943005A (en) * | 1957-01-17 | 1960-06-28 | Rca Corp | Method of alloying semiconductor material |
| US3009841A (en) * | 1959-03-06 | 1961-11-21 | Westinghouse Electric Corp | Preparation of semiconductor devices having uniform junctions |
| US3075892A (en) * | 1959-09-15 | 1963-01-29 | Westinghouse Electric Corp | Process for making semiconductor devices |
| US3232800A (en) * | 1961-12-16 | 1966-02-01 | Nippon Electric Co | Method of making semiconductor devices by forming a damage layer on a surface of a semiconductor body and then alloying through said damage layer |
| US3416979A (en) * | 1964-08-31 | 1968-12-17 | Matsushita Electric Ind Co Ltd | Method of making a variable capacitance silicon diode with hyper abrupt junction |
| BE671953A (de) * | 1964-11-05 |
-
1966
- 1966-11-15 US US594601A patent/US3544395A/en not_active Expired - Lifetime
- 1966-11-25 NL NL6616664A patent/NL6616664A/xx unknown
- 1966-11-29 GB GB53407/66A patent/GB1161517A/en not_active Expired
- 1966-11-29 FR FR85391A patent/FR1508395A/fr not_active Expired
- 1966-11-29 DE DE1564373A patent/DE1564373C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1564373C3 (de) | 1978-09-21 |
| FR1508395A (fr) | 1968-01-05 |
| US3544395A (en) | 1970-12-01 |
| DE1564373A1 (de) | 1972-02-17 |
| GB1161517A (en) | 1969-08-13 |
| DE1564373B2 (de) | 1973-03-01 |