NL6616664A - - Google Patents

Info

Publication number
NL6616664A
NL6616664A NL6616664A NL6616664A NL6616664A NL 6616664 A NL6616664 A NL 6616664A NL 6616664 A NL6616664 A NL 6616664A NL 6616664 A NL6616664 A NL 6616664A NL 6616664 A NL6616664 A NL 6616664A
Authority
NL
Netherlands
Application number
NL6616664A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6616664A publication Critical patent/NL6616664A/xx

Links

Classifications

    • H10P95/50
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/62Capacitors having potential barriers
    • H10P95/00
NL6616664A 1965-11-30 1966-11-25 NL6616664A (Direct)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7456765 1965-11-30

Publications (1)

Publication Number Publication Date
NL6616664A true NL6616664A (Direct) 1967-05-31

Family

ID=13550905

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6616664A NL6616664A (Direct) 1965-11-30 1966-11-25

Country Status (5)

Country Link
US (1) US3544395A (Direct)
DE (1) DE1564373C3 (Direct)
FR (1) FR1508395A (Direct)
GB (1) GB1161517A (Direct)
NL (1) NL6616664A (Direct)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3634151A (en) * 1970-05-01 1972-01-11 Matsushita Electric Industrial Co Ltd Method for making semiconductor devices
FR2091940B1 (Direct) * 1970-05-28 1973-05-25 Matsushita Electric Industrial Co Ltd
US3935585A (en) * 1972-08-22 1976-01-27 Korovin Stanislav Konstantinov Semiconductor diode with voltage-dependent capacitance
US3902925A (en) * 1973-10-30 1975-09-02 Gen Electric Deep diode device and method
US3897277A (en) * 1973-10-30 1975-07-29 Gen Electric High aspect ratio P-N junctions by the thermal gradient zone melting technique

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2847336A (en) * 1956-01-30 1958-08-12 Rca Corp Processing semiconductor devices
US2932594A (en) * 1956-09-17 1960-04-12 Rca Corp Method of making surface alloy junctions in semiconductor bodies
US2943005A (en) * 1957-01-17 1960-06-28 Rca Corp Method of alloying semiconductor material
US3009841A (en) * 1959-03-06 1961-11-21 Westinghouse Electric Corp Preparation of semiconductor devices having uniform junctions
US3075892A (en) * 1959-09-15 1963-01-29 Westinghouse Electric Corp Process for making semiconductor devices
US3232800A (en) * 1961-12-16 1966-02-01 Nippon Electric Co Method of making semiconductor devices by forming a damage layer on a surface of a semiconductor body and then alloying through said damage layer
US3416979A (en) * 1964-08-31 1968-12-17 Matsushita Electric Industrial Co Ltd Method of making a variable capacitance silicon diode with hyper abrupt junction
BE671953A (Direct) * 1964-11-05

Also Published As

Publication number Publication date
GB1161517A (en) 1969-08-13
DE1564373B2 (de) 1973-03-01
US3544395A (en) 1970-12-01
FR1508395A (fr) 1968-01-05
DE1564373C3 (de) 1978-09-21
DE1564373A1 (de) 1972-02-17

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