NL6611992A - - Google Patents

Info

Publication number
NL6611992A
NL6611992A NL6611992A NL6611992A NL6611992A NL 6611992 A NL6611992 A NL 6611992A NL 6611992 A NL6611992 A NL 6611992A NL 6611992 A NL6611992 A NL 6611992A NL 6611992 A NL6611992 A NL 6611992A
Authority
NL
Netherlands
Application number
NL6611992A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6611992A publication Critical patent/NL6611992A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6611992A 1965-11-29 1966-08-25 NL6611992A (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US510309A US3413145A (en) 1965-11-29 1965-11-29 Method of forming a crystalline semiconductor layer on an alumina substrate

Publications (1)

Publication Number Publication Date
NL6611992A true NL6611992A (cs) 1967-05-30

Family

ID=24030225

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6611992A NL6611992A (cs) 1965-11-29 1966-08-25

Country Status (4)

Country Link
US (1) US3413145A (cs)
DE (1) DE1558803A1 (cs)
GB (1) GB1160301A (cs)
NL (1) NL6611992A (cs)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3791882A (en) * 1966-08-31 1974-02-12 K Ogiue Method of manufacturing semiconductor devices utilizing simultaneous deposition of monocrystalline and polycrystalline regions
US3496037A (en) * 1967-05-29 1970-02-17 Motorola Inc Semiconductor growth on dielectric substrates
DE1589543B2 (de) * 1967-09-12 1972-08-24 Robert Bosch Gmbh, 7000 Stuttgart Halbleiterbauelement und verfahren zu seiner weichlotkontaktierung
US3664867A (en) * 1969-11-24 1972-05-23 North American Rockwell Composite structure of zinc oxide deposited epitaxially on sapphire
BE795556A (fr) * 1972-02-17 1973-06-18 Siemens Ag Circuit integre comportant des couches de semiconducteur disposees sur un substrat isolant
BE795737A (fr) * 1972-02-21 1973-06-18 Siemens Ag Procede pour fabriquer des transistors a effet de champ a canal
US3969753A (en) * 1972-06-30 1976-07-13 Rockwell International Corporation Silicon on sapphire oriented for maximum mobility
US4177321A (en) * 1972-07-25 1979-12-04 Semiconductor Research Foundation Single crystal of semiconductive material on crystal of insulating material
US4044372A (en) * 1974-08-05 1977-08-23 Sensor Technology, Inc. Photovoltaic cell having controllable spectral response
US3930908A (en) * 1974-09-30 1976-01-06 Rca Corporation Accurate control during vapor phase epitaxy
US4268848A (en) * 1979-05-07 1981-05-19 Motorola, Inc. Preferred device orientation on integrated circuits for better matching under mechanical stress
US4279688A (en) * 1980-03-17 1981-07-21 Rca Corporation Method of improving silicon crystal perfection in silicon on sapphire devices
US5356474A (en) * 1992-11-27 1994-10-18 General Electric Company Apparatus and method for making aligned Hi-Tc tape superconductors

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE570557A (cs) * 1957-08-26 1900-01-01
US2992903A (en) * 1957-10-30 1961-07-18 Imber Oscar Apparatus for growing thin crystals
NL263037A (cs) * 1960-03-31
US3218204A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide as a carrier gas in forming ii-vi compound from a crude ii-vicompound
US3177100A (en) * 1963-09-09 1965-04-06 Rca Corp Depositing epitaxial layer of silicon from a vapor mixture of sih4 and h3

Also Published As

Publication number Publication date
US3413145A (en) 1968-11-26
GB1160301A (en) 1969-08-06
DE1558803A1 (de) 1970-07-09

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