NL6610089A - - Google Patents
Info
- Publication number
- NL6610089A NL6610089A NL6610089A NL6610089A NL6610089A NL 6610089 A NL6610089 A NL 6610089A NL 6610089 A NL6610089 A NL 6610089A NL 6610089 A NL6610089 A NL 6610089A NL 6610089 A NL6610089 A NL 6610089A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US472796A US3383571A (en) | 1965-07-19 | 1965-07-19 | High-frequency power transistor with improved reverse-bias second breakdown characteristics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL6610089A true NL6610089A (et) | 1967-01-20 |
| NL151844B NL151844B (nl) | 1976-12-15 |
Family
ID=23876982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL666610089A NL151844B (nl) | 1965-07-19 | 1966-07-18 | Transistor. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3383571A (et) |
| BR (1) | BR6681392D0 (et) |
| DE (2) | DE6602334U (et) |
| ES (1) | ES329228A1 (et) |
| GB (1) | GB1147676A (et) |
| NL (1) | NL151844B (et) |
| SE (1) | SE336847B (et) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2108781B1 (et) * | 1970-10-05 | 1974-10-31 | Radiotechnique Compelec | |
| US3940783A (en) * | 1974-02-11 | 1976-02-24 | Signetics Corporation | Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure |
| US4226648A (en) * | 1979-03-16 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy |
| DE10126627A1 (de) * | 2001-05-31 | 2002-12-12 | Infineon Technologies Ag | Halbleiterstruktur und Verfahren zur Verbesserung der ESD-Festigkeit derselben |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL260906A (et) * | 1960-02-12 | |||
| US3131098A (en) * | 1960-10-26 | 1964-04-28 | Merck & Co Inc | Epitaxial deposition on a substrate placed in a socket of the carrier member |
| NL273009A (et) * | 1960-12-29 | |||
| NL287642A (et) * | 1962-01-18 | |||
| US3153731A (en) * | 1962-02-26 | 1964-10-20 | Merck & Co Inc | Semiconductor solid circuit including at least two transistors and zener diodes formed therein |
-
1965
- 1965-07-19 US US472796A patent/US3383571A/en not_active Expired - Lifetime
-
1966
- 1966-07-04 GB GB29921/66A patent/GB1147676A/en not_active Expired
- 1966-07-15 DE DE19666602334U patent/DE6602334U/de not_active Expired
- 1966-07-15 DE DE19661564536 patent/DE1564536B2/de not_active Ceased
- 1966-07-16 ES ES0329228A patent/ES329228A1/es not_active Expired
- 1966-07-18 SE SE09783/66A patent/SE336847B/xx unknown
- 1966-07-18 NL NL666610089A patent/NL151844B/xx unknown
- 1966-07-19 BR BR181392/66A patent/BR6681392D0/pt unknown
Also Published As
| Publication number | Publication date |
|---|---|
| ES329228A1 (es) | 1967-05-01 |
| SE336847B (et) | 1971-07-19 |
| GB1147676A (en) | 1969-04-02 |
| US3383571A (en) | 1968-05-14 |
| DE1564536A1 (de) | 1970-05-14 |
| NL151844B (nl) | 1976-12-15 |
| BR6681392D0 (pt) | 1973-05-15 |
| DE6602334U (de) | 1969-05-22 |
| DE1564536B2 (de) | 1972-06-22 |