NL6610089A - - Google Patents

Info

Publication number
NL6610089A
NL6610089A NL6610089A NL6610089A NL6610089A NL 6610089 A NL6610089 A NL 6610089A NL 6610089 A NL6610089 A NL 6610089A NL 6610089 A NL6610089 A NL 6610089A NL 6610089 A NL6610089 A NL 6610089A
Authority
NL
Netherlands
Application number
NL6610089A
Other versions
NL151844B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6610089A publication Critical patent/NL6610089A/xx
Publication of NL151844B publication Critical patent/NL151844B/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
NL666610089A 1965-07-19 1966-07-18 Transistor. NL151844B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US472796A US3383571A (en) 1965-07-19 1965-07-19 High-frequency power transistor with improved reverse-bias second breakdown characteristics

Publications (2)

Publication Number Publication Date
NL6610089A true NL6610089A (en:Method) 1967-01-20
NL151844B NL151844B (nl) 1976-12-15

Family

ID=23876982

Family Applications (1)

Application Number Title Priority Date Filing Date
NL666610089A NL151844B (nl) 1965-07-19 1966-07-18 Transistor.

Country Status (7)

Country Link
US (1) US3383571A (en:Method)
BR (1) BR6681392D0 (en:Method)
DE (2) DE6602334U (en:Method)
ES (1) ES329228A1 (en:Method)
GB (1) GB1147676A (en:Method)
NL (1) NL151844B (en:Method)
SE (1) SE336847B (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2108781B1 (en:Method) * 1970-10-05 1974-10-31 Radiotechnique Compelec
US3940783A (en) * 1974-02-11 1976-02-24 Signetics Corporation Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure
US4226648A (en) * 1979-03-16 1980-10-07 Bell Telephone Laboratories, Incorporated Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy
DE10126627A1 (de) * 2001-05-31 2002-12-12 Infineon Technologies Ag Halbleiterstruktur und Verfahren zur Verbesserung der ESD-Festigkeit derselben

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL260906A (en:Method) * 1960-02-12
US3131098A (en) * 1960-10-26 1964-04-28 Merck & Co Inc Epitaxial deposition on a substrate placed in a socket of the carrier member
NL273009A (en:Method) * 1960-12-29
NL287642A (en:Method) * 1962-01-18
US3153731A (en) * 1962-02-26 1964-10-20 Merck & Co Inc Semiconductor solid circuit including at least two transistors and zener diodes formed therein

Also Published As

Publication number Publication date
BR6681392D0 (pt) 1973-05-15
DE1564536B2 (de) 1972-06-22
NL151844B (nl) 1976-12-15
ES329228A1 (es) 1967-05-01
SE336847B (en:Method) 1971-07-19
DE1564536A1 (de) 1970-05-14
US3383571A (en) 1968-05-14
DE6602334U (de) 1969-05-22
GB1147676A (en) 1969-04-02

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