NL6608915A - - Google Patents
Info
- Publication number
- NL6608915A NL6608915A NL6608915A NL6608915A NL6608915A NL 6608915 A NL6608915 A NL 6608915A NL 6608915 A NL6608915 A NL 6608915A NL 6608915 A NL6608915 A NL 6608915A NL 6608915 A NL6608915 A NL 6608915A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46753165A | 1965-06-28 | 1965-06-28 | |
US467422A US3407479A (en) | 1965-06-28 | 1965-06-28 | Isolation of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6608915A true NL6608915A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1966-12-29 |
Family
ID=27042049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6608915A NL6608915A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1965-06-28 | 1966-06-27 |
Country Status (4)
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3577044A (en) * | 1966-03-08 | 1971-05-04 | Ibm | Integrated semiconductor devices and fabrication methods therefor |
US3489952A (en) * | 1967-05-15 | 1970-01-13 | Singer Co | Encapsulated microelectronic devices |
US3490140A (en) * | 1967-10-05 | 1970-01-20 | Bell Telephone Labor Inc | Methods for making semiconductor devices |
US3574932A (en) * | 1968-08-12 | 1971-04-13 | Motorola Inc | Thin-film beam-lead resistors |
US3844858A (en) * | 1968-12-31 | 1974-10-29 | Texas Instruments Inc | Process for controlling the thickness of a thin layer of semiconductor material and semiconductor substrate |
US3619739A (en) * | 1969-01-16 | 1971-11-09 | Signetics Corp | Bulk resistor and integrated circuit using the same |
US3859717A (en) * | 1970-12-21 | 1975-01-14 | Rockwell International Corp | Method of manufacturing control electrodes for charge coupled circuits and the like |
JPS5738965B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-07-04 | 1982-08-18 | ||
US3974006A (en) * | 1975-03-21 | 1976-08-10 | Valentin Rodriguez | Method of obtaining high temperature resistant assemblies comprising isolated silicon islands bonded to a substrate |
JPS5247686A (en) * | 1975-10-15 | 1977-04-15 | Toshiba Corp | Semiconductor device and process for production of same |
JPS5252582A (en) * | 1975-10-25 | 1977-04-27 | Toshiba Corp | Device and production for semiconductor |
US4335501A (en) * | 1979-10-31 | 1982-06-22 | The General Electric Company Limited | Manufacture of monolithic LED arrays for electroluminescent display devices |
JPH0671043B2 (ja) * | 1984-08-31 | 1994-09-07 | 株式会社東芝 | シリコン結晶体構造の製造方法 |
DE68927871T2 (de) * | 1988-11-09 | 1997-07-03 | Sony Corp | Herstellungsverfahren eines Halbleiterwafers |
US5001075A (en) * | 1989-04-03 | 1991-03-19 | Motorola | Fabrication of dielectrically isolated semiconductor device |
US5145795A (en) * | 1990-06-25 | 1992-09-08 | Motorola, Inc. | Semiconductor device and method therefore |
JP3019430B2 (ja) * | 1991-01-21 | 2000-03-13 | ソニー株式会社 | 半導体集積回路装置 |
JP3344138B2 (ja) * | 1995-01-30 | 2002-11-11 | 株式会社日立製作所 | 半導体複合センサ |
US5691230A (en) | 1996-09-04 | 1997-11-25 | Micron Technology, Inc. | Technique for producing small islands of silicon on insulator |
US6211039B1 (en) | 1996-11-12 | 2001-04-03 | Micron Technology, Inc. | Silicon-on-insulator islands and method for their formation |
US6093623A (en) | 1998-08-04 | 2000-07-25 | Micron Technology, Inc. | Methods for making silicon-on-insulator structures |
US6423613B1 (en) | 1998-11-10 | 2002-07-23 | Micron Technology, Inc. | Low temperature silicon wafer bond process with bulk material bond strength |
US6524890B2 (en) | 1999-11-17 | 2003-02-25 | Denso Corporation | Method for manufacturing semiconductor device having element isolation structure |
US20020020898A1 (en) * | 2000-08-16 | 2002-02-21 | Vu Quat T. | Microelectronic substrates with integrated devices |
US20020070443A1 (en) * | 2000-12-08 | 2002-06-13 | Xiao-Chun Mu | Microelectronic package having an integrated heat sink and build-up layers |
US6852167B2 (en) | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
US7589029B2 (en) | 2002-05-02 | 2009-09-15 | Micron Technology, Inc. | Atomic layer deposition and conversion |
US7601649B2 (en) | 2004-08-02 | 2009-10-13 | Micron Technology, Inc. | Zirconium-doped tantalum oxide films |
US7081421B2 (en) | 2004-08-26 | 2006-07-25 | Micron Technology, Inc. | Lanthanide oxide dielectric layer |
US7591958B2 (en) * | 2004-09-14 | 2009-09-22 | Stmicroelectronics Sa | Thin glass chip for an electronic component and manufacturing method |
US7560395B2 (en) | 2005-01-05 | 2009-07-14 | Micron Technology, Inc. | Atomic layer deposited hafnium tantalum oxide dielectrics |
US7662729B2 (en) | 2005-04-28 | 2010-02-16 | Micron Technology, Inc. | Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
US7759747B2 (en) | 2006-08-31 | 2010-07-20 | Micron Technology, Inc. | Tantalum aluminum oxynitride high-κ dielectric |
US7776765B2 (en) | 2006-08-31 | 2010-08-17 | Micron Technology, Inc. | Tantalum silicon oxynitride high-k dielectrics and metal gates |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3247428A (en) * | 1961-09-29 | 1966-04-19 | Ibm | Coated objects and methods of providing the protective coverings therefor |
US3300832A (en) * | 1963-06-28 | 1967-01-31 | Rca Corp | Method of making composite insulatorsemiconductor wafer |
US3290753A (en) * | 1963-08-19 | 1966-12-13 | Bell Telephone Labor Inc | Method of making semiconductor integrated circuit elements |
US3312879A (en) * | 1964-07-29 | 1967-04-04 | North American Aviation Inc | Semiconductor structure including opposite conductivity segments |
US3332137A (en) * | 1964-09-28 | 1967-07-25 | Rca Corp | Method of isolating chips of a wafer of semiconductor material |
US3381182A (en) * | 1964-10-19 | 1968-04-30 | Philco Ford Corp | Microcircuits having buried conductive layers |
US3343255A (en) * | 1965-06-14 | 1967-09-26 | Westinghouse Electric Corp | Structures for semiconductor integrated circuits and methods of forming them |
US3390022A (en) * | 1965-06-30 | 1968-06-25 | North American Rockwell | Semiconductor device and process for producing same |
-
1965
- 1965-06-28 US US467422A patent/US3407479A/en not_active Expired - Lifetime
- 1965-06-28 US US467531A patent/US3457123A/en not_active Expired - Lifetime
-
1966
- 1966-06-16 GB GB26999/66A patent/GB1076440A/en not_active Expired
- 1966-06-24 DE DE19661564336 patent/DE1564336A1/de active Pending
- 1966-06-27 NL NL6608915A patent/NL6608915A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB1076440A (en) | 1967-07-19 |
US3457123A (en) | 1969-07-22 |
DE1564336A1 (de) | 1969-11-06 |
US3407479A (en) | 1968-10-29 |