NL6601209A - - Google Patents

Info

Publication number
NL6601209A
NL6601209A NL6601209A NL6601209A NL6601209A NL 6601209 A NL6601209 A NL 6601209A NL 6601209 A NL6601209 A NL 6601209A NL 6601209 A NL6601209 A NL 6601209A NL 6601209 A NL6601209 A NL 6601209A
Authority
NL
Netherlands
Application number
NL6601209A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6601209A publication Critical patent/NL6601209A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/084Diode-transistor logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01Modifications for accelerating switching
    • H03K19/013Modifications for accelerating switching in bipolar transistor circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01Modifications for accelerating switching
    • H03K19/013Modifications for accelerating switching in bipolar transistor circuits
    • H03K19/0136Modifications for accelerating switching in bipolar transistor circuits by means of a pull-up or down element

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
NL6601209A 1965-02-01 1966-01-31 NL6601209A (sr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US429345A US3394268A (en) 1965-02-01 1965-02-01 Logic switching circuit

Publications (1)

Publication Number Publication Date
NL6601209A true NL6601209A (sr) 1966-08-02

Family

ID=23702844

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6601209A NL6601209A (sr) 1965-02-01 1966-01-31

Country Status (6)

Country Link
US (1) US3394268A (sr)
BE (1) BE675783A (sr)
CH (1) CH456689A (sr)
DE (1) DE1295647B (sr)
GB (1) GB1130192A (sr)
NL (1) NL6601209A (sr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3510685A (en) * 1966-02-16 1970-05-05 Nippon Telegraph & Telephone High speed semiconductor switching circuitry
US3512016A (en) * 1966-03-15 1970-05-12 Philco Ford Corp High speed non-saturating switching circuit
US3437831A (en) * 1966-03-21 1969-04-08 Motorola Inc Logic circuit
US3751681A (en) * 1966-03-23 1973-08-07 Honeywell Inc Memory selection apparatus
US3515899A (en) * 1966-06-08 1970-06-02 Northern Electric Co Logic gate with stored charge carrier leakage path
US3564281A (en) * 1966-12-23 1971-02-16 Hitachi Ltd High speed logic circuits and method of constructing the same
US3500066A (en) * 1968-01-10 1970-03-10 Bell Telephone Labor Inc Radio frequency power transistor with individual current limiting control for thermally isolated regions
US3581107A (en) * 1968-03-20 1971-05-25 Signetics Corp Digital logic clamp for limiting power consumption of interface gate
DE1918873B2 (de) * 1969-04-14 1972-07-27 Siemens AG, 1000 Berlin u. 8000 München Ecl-schaltkreis zur realisierung der und-verknuepfung
US3769530A (en) * 1969-07-11 1973-10-30 Nat Semiconductor Corp Multiple emitter transistor apparatus
US3679917A (en) * 1970-05-01 1972-07-25 Cogar Corp Integrated circuit system having single power supply
US3614467A (en) * 1970-06-22 1971-10-19 Cogar Corp Nonsaturated logic circuits compatible with ttl and dtl circuits
US3953748A (en) * 1972-03-10 1976-04-27 Nippondenso Co., Ltd. Interface circuit
JPS4893251A (sr) * 1972-03-10 1973-12-03
US3868517A (en) * 1973-06-15 1975-02-25 Motorola Inc Low hysteresis threshold detector having controlled output slew rate
US3999080A (en) * 1974-12-23 1976-12-21 Texas Instruments Inc. Transistor coupled logic circuit
EP0073870B1 (fr) * 1981-09-08 1986-12-30 International Business Machines Corporation Multivibrateur monostable intégré sans condensateur
US4415817A (en) * 1981-10-08 1983-11-15 Signetics Corporation Bipolar logic gate including circuitry to prevent turn-off and deep saturation of pull-down transistor
JPH0693626B2 (ja) * 1983-07-25 1994-11-16 株式会社日立製作所 半導体集積回路装置
DE3346518C1 (de) * 1983-12-22 1989-01-12 Texas Instruments Deutschland Gmbh, 8050 Freising Feldeffekttransistor mit isolierter Gate-Elektrode
US4581550A (en) * 1984-03-06 1986-04-08 Fairchild Camera & Instrument Corporation TTL tristate device with reduced output capacitance
US4704548A (en) * 1985-01-31 1987-11-03 Texas Instruments Incorporated High to low transition speed up circuit for TTL-type gates
US4728814A (en) * 1986-10-06 1988-03-01 International Business Machines Corporation Transistor inverse mode impulse generator
US6560081B1 (en) * 2000-10-17 2003-05-06 National Semiconductor Corporation Electrostatic discharge (ESD) protection circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL260242A (sr) * 1960-01-20
US3217181A (en) * 1962-09-11 1965-11-09 Rca Corp Logic switching circuit comprising a plurality of discrete inputs
US3287577A (en) * 1964-08-20 1966-11-22 Westinghouse Electric Corp Low dissipation logic gates

Also Published As

Publication number Publication date
DE1295647B (de) 1969-05-22
BE675783A (sr) 1966-05-16
GB1130192A (en) 1968-10-09
CH456689A (de) 1968-07-31
US3394268A (en) 1968-07-23

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