NL6601209A - - Google Patents
Info
- Publication number
- NL6601209A NL6601209A NL6601209A NL6601209A NL6601209A NL 6601209 A NL6601209 A NL 6601209A NL 6601209 A NL6601209 A NL 6601209A NL 6601209 A NL6601209 A NL 6601209A NL 6601209 A NL6601209 A NL 6601209A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/084—Diode-transistor logic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
- H03K19/0136—Modifications for accelerating switching in bipolar transistor circuits by means of a pull-up or down element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Logic Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US429345A US3394268A (en) | 1965-02-01 | 1965-02-01 | Logic switching circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6601209A true NL6601209A (en:Method) | 1966-08-02 |
Family
ID=23702844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6601209A NL6601209A (en:Method) | 1965-02-01 | 1966-01-31 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3394268A (en:Method) |
| BE (1) | BE675783A (en:Method) |
| CH (1) | CH456689A (en:Method) |
| DE (1) | DE1295647B (en:Method) |
| GB (1) | GB1130192A (en:Method) |
| NL (1) | NL6601209A (en:Method) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3510685A (en) * | 1966-02-16 | 1970-05-05 | Nippon Telegraph & Telephone | High speed semiconductor switching circuitry |
| US3512016A (en) * | 1966-03-15 | 1970-05-12 | Philco Ford Corp | High speed non-saturating switching circuit |
| US3437831A (en) * | 1966-03-21 | 1969-04-08 | Motorola Inc | Logic circuit |
| US3751681A (en) * | 1966-03-23 | 1973-08-07 | Honeywell Inc | Memory selection apparatus |
| US3515899A (en) * | 1966-06-08 | 1970-06-02 | Northern Electric Co | Logic gate with stored charge carrier leakage path |
| US3564281A (en) * | 1966-12-23 | 1971-02-16 | Hitachi Ltd | High speed logic circuits and method of constructing the same |
| US3500066A (en) * | 1968-01-10 | 1970-03-10 | Bell Telephone Labor Inc | Radio frequency power transistor with individual current limiting control for thermally isolated regions |
| US3581107A (en) * | 1968-03-20 | 1971-05-25 | Signetics Corp | Digital logic clamp for limiting power consumption of interface gate |
| DE1918873B2 (de) * | 1969-04-14 | 1972-07-27 | Siemens AG, 1000 Berlin u. 8000 München | Ecl-schaltkreis zur realisierung der und-verknuepfung |
| US3769530A (en) * | 1969-07-11 | 1973-10-30 | Nat Semiconductor Corp | Multiple emitter transistor apparatus |
| US3679917A (en) * | 1970-05-01 | 1972-07-25 | Cogar Corp | Integrated circuit system having single power supply |
| US3614467A (en) * | 1970-06-22 | 1971-10-19 | Cogar Corp | Nonsaturated logic circuits compatible with ttl and dtl circuits |
| JPS4893251A (en:Method) * | 1972-03-10 | 1973-12-03 | ||
| US3953748A (en) * | 1972-03-10 | 1976-04-27 | Nippondenso Co., Ltd. | Interface circuit |
| US3868517A (en) * | 1973-06-15 | 1975-02-25 | Motorola Inc | Low hysteresis threshold detector having controlled output slew rate |
| US3999080A (en) * | 1974-12-23 | 1976-12-21 | Texas Instruments Inc. | Transistor coupled logic circuit |
| EP0073870B1 (fr) * | 1981-09-08 | 1986-12-30 | International Business Machines Corporation | Multivibrateur monostable intégré sans condensateur |
| US4415817A (en) * | 1981-10-08 | 1983-11-15 | Signetics Corporation | Bipolar logic gate including circuitry to prevent turn-off and deep saturation of pull-down transistor |
| JPH0693626B2 (ja) * | 1983-07-25 | 1994-11-16 | 株式会社日立製作所 | 半導体集積回路装置 |
| DE3346518C1 (de) * | 1983-12-22 | 1989-01-12 | Texas Instruments Deutschland Gmbh, 8050 Freising | Feldeffekttransistor mit isolierter Gate-Elektrode |
| US4581550A (en) * | 1984-03-06 | 1986-04-08 | Fairchild Camera & Instrument Corporation | TTL tristate device with reduced output capacitance |
| US4704548A (en) * | 1985-01-31 | 1987-11-03 | Texas Instruments Incorporated | High to low transition speed up circuit for TTL-type gates |
| US4728814A (en) * | 1986-10-06 | 1988-03-01 | International Business Machines Corporation | Transistor inverse mode impulse generator |
| US6560081B1 (en) * | 2000-10-17 | 2003-05-06 | National Semiconductor Corporation | Electrostatic discharge (ESD) protection circuit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL260242A (en:Method) * | 1960-01-20 | |||
| US3217181A (en) * | 1962-09-11 | 1965-11-09 | Rca Corp | Logic switching circuit comprising a plurality of discrete inputs |
| US3287577A (en) * | 1964-08-20 | 1966-11-22 | Westinghouse Electric Corp | Low dissipation logic gates |
-
1965
- 1965-02-01 US US429345A patent/US3394268A/en not_active Expired - Lifetime
-
1966
- 1966-01-25 DE DEW40791A patent/DE1295647B/de active Pending
- 1966-01-26 GB GB3437/66A patent/GB1130192A/en not_active Expired
- 1966-01-28 CH CH119366A patent/CH456689A/de unknown
- 1966-01-31 BE BE675783D patent/BE675783A/xx unknown
- 1966-01-31 NL NL6601209A patent/NL6601209A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH456689A (de) | 1968-07-31 |
| US3394268A (en) | 1968-07-23 |
| GB1130192A (en) | 1968-10-09 |
| DE1295647B (de) | 1969-05-22 |
| BE675783A (en:Method) | 1966-05-16 |