NL6515671A - - Google Patents

Info

Publication number
NL6515671A
NL6515671A NL6515671A NL6515671A NL6515671A NL 6515671 A NL6515671 A NL 6515671A NL 6515671 A NL6515671 A NL 6515671A NL 6515671 A NL6515671 A NL 6515671A NL 6515671 A NL6515671 A NL 6515671A
Authority
NL
Netherlands
Application number
NL6515671A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6515671A publication Critical patent/NL6515671A/xx

Links

Classifications

    • H10W74/43
    • H10P95/00
    • H10W20/40
    • H10W72/01515
    • H10W72/075
    • H10W72/536
NL6515671A 1964-12-03 1965-12-02 NL6515671A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR997223 1964-12-03

Publications (1)

Publication Number Publication Date
NL6515671A true NL6515671A (enExample) 1966-06-06

Family

ID=8843926

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6515671A NL6515671A (enExample) 1964-12-03 1965-12-02

Country Status (4)

Country Link
US (1) US3436612A (enExample)
DE (1) DE1489788A1 (enExample)
GB (1) GB1127629A (enExample)
NL (1) NL6515671A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611071A (en) * 1969-04-10 1971-10-05 Ibm Inversion prevention system for semiconductor devices
US4177480A (en) * 1975-10-02 1979-12-04 Licentia Patent-Verwaltungs-G.M.B.H. Integrated circuit arrangement with means for avoiding undesirable capacitive coupling between leads
DE2603747A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung
JPS52120768A (en) * 1976-04-05 1977-10-11 Nec Corp Semiconductor device
US4329707A (en) * 1978-09-15 1982-05-11 Westinghouse Electric Corp. Glass-sealed power thyristor
US4835592A (en) * 1986-03-05 1989-05-30 Ixys Corporation Semiconductor wafer with dice having briding metal structure and method of manufacturing same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2497770A (en) * 1948-12-29 1950-02-14 Bell Telephone Labor Inc Transistor-microphone
USRE24537E (en) * 1952-07-29 1958-09-23 Unsymmetrical conductor arrangements
BE525280A (enExample) * 1952-12-31 1900-01-01
US2781480A (en) * 1953-07-31 1957-02-12 Rca Corp Semiconductor rectifiers
US2725505A (en) * 1953-11-30 1955-11-29 Rca Corp Semiconductor power devices
US3097308A (en) * 1959-03-09 1963-07-09 Rca Corp Semiconductor device with surface electrode producing electrostatic field and circuits therefor
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
US3271201A (en) * 1962-10-30 1966-09-06 Itt Planar semiconductor devices
US3165430A (en) * 1963-01-21 1965-01-12 Siliconix Inc Method of ultra-fine semiconductor manufacture

Also Published As

Publication number Publication date
DE1489788A1 (de) 1969-06-04
US3436612A (en) 1969-04-01
GB1127629A (en) 1968-09-18

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