NL6511474A - - Google Patents
Info
- Publication number
- NL6511474A NL6511474A NL6511474A NL6511474A NL6511474A NL 6511474 A NL6511474 A NL 6511474A NL 6511474 A NL6511474 A NL 6511474A NL 6511474 A NL6511474 A NL 6511474A NL 6511474 A NL6511474 A NL 6511474A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US404352A US3341377A (en) | 1964-10-16 | 1964-10-16 | Surface-passivated alloy semiconductor devices and method for producing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6511474A true NL6511474A (de) | 1966-04-18 |
Family
ID=23599273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6511474A NL6511474A (de) | 1964-10-16 | 1965-09-02 |
Country Status (3)
Country | Link |
---|---|
US (1) | US3341377A (de) |
ES (1) | ES323139A1 (de) |
NL (1) | NL6511474A (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1295237B (de) * | 1964-10-22 | 1969-05-14 | Siemens Ag | Druckempfindliche Halbleiteranordnung und Verfahren zu ihrer Herstellung |
US3410735A (en) * | 1965-10-22 | 1968-11-12 | Motorola Inc | Method of forming a temperature compensated reference diode |
GB1099049A (en) * | 1965-12-28 | 1968-01-10 | Telefunken Patent | A method of manufacturing transistors |
US3510368A (en) * | 1966-08-29 | 1970-05-05 | Motorola Inc | Method of making a semiconductor device |
US3519900A (en) * | 1967-11-13 | 1970-07-07 | Motorola Inc | Temperature compensated reference diodes and methods for making same |
US3612959A (en) * | 1969-01-31 | 1971-10-12 | Unitrode Corp | Planar zener diodes having uniform junction breakdown characteristics |
US3649882A (en) * | 1970-05-13 | 1972-03-14 | Albert Louis Hoffman | Diffused alloyed emitter and the like and a method of manufacture thereof |
JPS56615Y1 (de) * | 1973-12-20 | 1981-01-09 | ||
US4075649A (en) * | 1975-11-25 | 1978-02-21 | Siemens Corporation | Single chip temperature compensated reference diode and method for making same |
US4978636A (en) * | 1989-12-26 | 1990-12-18 | Motorola Inc. | Method of making a semiconductor diode |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL94819C (de) * | 1954-04-01 | |||
NL99556C (de) * | 1961-03-30 | |||
BE636316A (de) * | 1962-08-23 | 1900-01-01 | ||
US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
-
1964
- 1964-10-16 US US404352A patent/US3341377A/en not_active Expired - Lifetime
-
1965
- 1965-09-02 NL NL6511474A patent/NL6511474A/xx unknown
-
1966
- 1966-02-16 ES ES0323139A patent/ES323139A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
ES323139A1 (es) | 1966-12-01 |
US3341377A (en) | 1967-09-12 |