NL6502529A - - Google Patents

Info

Publication number
NL6502529A
NL6502529A NL6502529A NL6502529A NL6502529A NL 6502529 A NL6502529 A NL 6502529A NL 6502529 A NL6502529 A NL 6502529A NL 6502529 A NL6502529 A NL 6502529A NL 6502529 A NL6502529 A NL 6502529A
Authority
NL
Netherlands
Application number
NL6502529A
Other versions
NL146720B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB1143788D priority Critical patent/GB1143788A/en
Application filed filed Critical
Priority to NL656502529A priority patent/NL146720B/xx
Priority to DE1519844A priority patent/DE1519844C3/de
Priority to CH266466A priority patent/CH499991A/de
Priority to AT172966A priority patent/AT269074B/de
Priority to BE677151D priority patent/BE677151A/xx
Priority to FR51348A priority patent/FR1470189A/fr
Publication of NL6502529A publication Critical patent/NL6502529A/xx
Priority to US00145876A priority patent/US3840652A/en
Publication of NL146720B publication Critical patent/NL146720B/xx

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D9/00Crystallisation
    • B01D9/004Fractional crystallisation; Fractionating or rectifying columns
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • C01B19/007Tellurides or selenides of metals
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/06Hydrogen phosphides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00Compounds of antimony
    • C01G30/002Compounds containing antimony, with or without oxygen or hydrogen, and containing two or more other elements
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00Compounds of antimony
    • C01G30/008Sulfides
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/007Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/047Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/46Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/852Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/42Magnetic properties
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/80Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
NL656502529A 1965-02-27 1965-02-27 Werkwijze voor het insluitselvrij maken van kristallen en voorwerp, verkregen onder toepassing van de werkwijze. NL146720B (nl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
GB1143788D GB1143788A (pm) 1965-02-27
NL656502529A NL146720B (nl) 1965-02-27 1965-02-27 Werkwijze voor het insluitselvrij maken van kristallen en voorwerp, verkregen onder toepassing van de werkwijze.
DE1519844A DE1519844C3 (de) 1965-02-27 1966-02-23 Verfahren zum Beseitigen von Einschlüssen aus Kristallen
CH266466A CH499991A (de) 1965-02-27 1966-02-24 Verfahren zum Herstellen von Kristallen einer aus mindestens zwei Komponenten bestehenden Verbindung
AT172966A AT269074B (de) 1965-02-27 1966-02-24 Verfahren zum Herstellen physikalisch reiner Kristalle einer Verbindung
BE677151D BE677151A (pm) 1965-02-27 1966-02-28
FR51348A FR1470189A (fr) 1965-02-27 1966-02-28 Procédé d'élaboration de cristaux, physiquement purs, d'un corps composé
US00145876A US3840652A (en) 1965-02-27 1971-05-21 Method of removing foreign phases from the crystals of a compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL656502529A NL146720B (nl) 1965-02-27 1965-02-27 Werkwijze voor het insluitselvrij maken van kristallen en voorwerp, verkregen onder toepassing van de werkwijze.

Publications (2)

Publication Number Publication Date
NL6502529A true NL6502529A (pm) 1966-08-29
NL146720B NL146720B (nl) 1975-08-15

Family

ID=19792513

Family Applications (1)

Application Number Title Priority Date Filing Date
NL656502529A NL146720B (nl) 1965-02-27 1965-02-27 Werkwijze voor het insluitselvrij maken van kristallen en voorwerp, verkregen onder toepassing van de werkwijze.

Country Status (6)

Country Link
AT (1) AT269074B (pm)
BE (1) BE677151A (pm)
CH (1) CH499991A (pm)
DE (1) DE1519844C3 (pm)
GB (1) GB1143788A (pm)
NL (1) NL146720B (pm)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115966619B (zh) * 2023-01-09 2025-08-12 南京大学 一种碲化锌纳米片的制备方法以及一种光电器件及其制备方法和应用

Also Published As

Publication number Publication date
NL146720B (nl) 1975-08-15
CH499991A (de) 1970-12-15
BE677151A (pm) 1966-08-01
GB1143788A (pm) 1900-01-01
DE1519844C3 (de) 1974-05-02
DE1519844A1 (de) 1969-02-13
DE1519844B2 (de) 1973-10-04
AT269074B (de) 1969-03-10

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