NL6411697A - - Google Patents
Info
- Publication number
- NL6411697A NL6411697A NL6411697A NL6411697A NL6411697A NL 6411697 A NL6411697 A NL 6411697A NL 6411697 A NL6411697 A NL 6411697A NL 6411697 A NL6411697 A NL 6411697A NL 6411697 A NL6411697 A NL 6411697A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US316347A US3275417A (en) | 1963-10-15 | 1963-10-15 | Production of dislocation-free silicon single crystals |
| US493955A US3397042A (en) | 1963-10-15 | 1965-08-27 | Production of dislocation-free silicon single crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6411697A true NL6411697A (US08197722-20120612-C00042.png) | 1965-04-20 |
Family
ID=26980387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6411697A NL6411697A (US08197722-20120612-C00042.png) | 1963-10-15 | 1964-10-08 |
Country Status (6)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1619994B2 (de) * | 1967-03-09 | 1976-07-15 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum zuechten eines stabfoermigen, versetzungsfreien einkristalls aus silicium durch tiegelfreies zonenschmelzen |
| US4197157A (en) * | 1975-03-19 | 1980-04-08 | Arthur D. Little, Inc. | Method for forming refractory tubing |
| JPS52107183A (en) * | 1976-03-06 | 1977-09-08 | Toshitaka Okamoto | Electric stand shade |
| JPS5374781A (en) * | 1976-12-16 | 1978-07-03 | Imagawa Yasuhito | Foldable lamp shade |
| US4045181A (en) * | 1976-12-27 | 1977-08-30 | Monsanto Company | Apparatus for zone refining |
| JPS546383A (en) * | 1977-06-16 | 1979-01-18 | Yasuhito Imagawa | Foldable lamp shade |
| DE3421538A1 (de) * | 1984-06-08 | 1985-12-12 | ATOMIKA Technische Physik GmbH, 8000 München | Vakuumaufdampfeinrichtung |
| DE102014226419A1 (de) * | 2014-12-18 | 2016-06-23 | Siltronic Ag | Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA674121A (en) * | 1963-11-12 | Siemens-Schuckertwerke Aktiengesellschaft | Method and apparatus for producing a strip of hyperpure semiconductor material | |
| US2962363A (en) * | 1957-07-09 | 1960-11-29 | Pacific Semiconductors Inc | Crystal pulling apparatus and method |
| US3036892A (en) * | 1958-03-05 | 1962-05-29 | Siemens Ag | Production of hyper-pure monocrystal-line rods in continuous operation |
| US2981687A (en) * | 1958-04-03 | 1961-04-25 | British Thomson Houston Co Ltd | Production of mono-crystal semiconductor bodies |
| DE1153908B (de) * | 1958-04-22 | 1963-09-05 | Siemens Ag | Verfahren und Vorrichtung zum tiegellosen Zonenschmelzen mit Abstandsaenderung der Stabenden |
| US2905798A (en) * | 1958-09-15 | 1959-09-22 | Lindberg Eng Co | Induction heating apparatus |
| NL253526A (US08197722-20120612-C00042.png) * | 1959-08-14 | |||
| NL255530A (US08197722-20120612-C00042.png) * | 1959-09-11 | |||
| FR1282910A (fr) * | 1960-03-01 | 1962-01-27 | Thomson Houston Comp Francaise | Méthode de croissance sans dislocation de cristaux de semi-conducteur |
| US3135585A (en) * | 1960-03-01 | 1964-06-02 | Gen Electric | Method of growing dislocation-free semiconductor crystals |
| NL269311A (US08197722-20120612-C00042.png) * | 1960-09-20 | |||
| GB926487A (en) * | 1960-11-25 | 1963-05-22 | Dorman & Smith Ltd | Improvements in and relating to electrical fuse assemblies |
| NL129916C (US08197722-20120612-C00042.png) * | 1961-02-07 |
-
1964
- 1964-10-08 NL NL6411697A patent/NL6411697A/xx unknown
- 1964-10-12 GB GB41589/64A patent/GB1075706A/en not_active Expired
- 1964-10-13 DE DE1519912A patent/DE1519912C2/de not_active Expired
- 1964-10-15 JP JP39058378A patent/JPS4817986B1/ja active Pending
-
1965
- 1965-08-27 US US493955A patent/US3397042A/en not_active Expired - Lifetime
-
1969
- 1969-12-31 MY MY1969259A patent/MY6900259A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1075706A (en) | 1967-07-12 |
| US3397042A (en) | 1968-08-13 |
| DE1519912B1 (de) | 1970-06-18 |
| DE1519912C2 (de) | 1974-10-03 |
| JPS4817986B1 (US08197722-20120612-C00042.png) | 1973-06-02 |
| MY6900259A (en) | 1969-12-31 |
