NL6405927A - - Google Patents
Info
- Publication number
- NL6405927A NL6405927A NL6405927A NL6405927A NL6405927A NL 6405927 A NL6405927 A NL 6405927A NL 6405927 A NL6405927 A NL 6405927A NL 6405927 A NL6405927 A NL 6405927A NL 6405927 A NL6405927 A NL 6405927A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4006—Injection locking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0085580 | 1963-06-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6405927A true NL6405927A (fr) | 1964-12-08 |
Family
ID=7512444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6405927A NL6405927A (fr) | 1963-06-07 | 1964-05-27 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3704427A (fr) |
| FR (1) | FR1398262A (fr) |
| GB (1) | GB1060104A (fr) |
| NL (1) | NL6405927A (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3835414A (en) * | 1972-03-24 | 1974-09-10 | Us Air Force | Gallium arsenide array |
| US4677629A (en) * | 1985-09-30 | 1987-06-30 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Means for phase locking the outputs of a surface emitting laser diode array |
| US4755016A (en) * | 1985-11-06 | 1988-07-05 | American Telephone And Telegraph Company At&T Bell Laboratories | Coherent lightwave transmitters |
| US4686485A (en) * | 1985-11-07 | 1987-08-11 | The United States Of America As Represented By The Secretary Of The Navy | Optical injection locking of laser diode arrays |
| JPH0812946B2 (ja) * | 1987-10-28 | 1996-02-07 | 富士写真フイルム株式会社 | 光増幅器へのレーザビーム入射方法および装置 |
| WO1999005728A1 (fr) | 1997-07-25 | 1999-02-04 | Nichia Chemical Industries, Ltd. | Dispositif a semi-conducteur en nitrure |
| JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| DE60043536D1 (de) | 1999-03-04 | 2010-01-28 | Nichia Corp | Nitridhalbleiterlaserelement |
| DE10214960A1 (de) * | 2002-04-04 | 2003-10-30 | Lzh Laserzentrum Hannover Ev | Einrichtung zur Verstärkung kurzer, insbesondere ultrakurzer Laserpulse |
| KR100575966B1 (ko) * | 2003-12-18 | 2006-05-02 | 삼성전자주식회사 | 광대역 광원 |
| TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3312905A (en) * | 1963-06-24 | 1967-04-04 | Rca Corp | High power laser incorporating plural tunable amplifier stages |
| US3309553A (en) * | 1963-08-16 | 1967-03-14 | Varian Associates | Solid state radiation emitters |
| US3353114A (en) * | 1963-09-09 | 1967-11-14 | Boeing Co | Tunnel-injection light emitting devices |
| US3431513A (en) * | 1964-09-28 | 1969-03-04 | Nippon Electric Co | Twin semiconductor laser |
| US3514715A (en) * | 1967-06-29 | 1970-05-26 | Rca Corp | Multilayer,light-emitting semiconductor device |
-
1964
- 1964-05-27 NL NL6405927A patent/NL6405927A/xx unknown
- 1964-06-03 US US372199A patent/US3704427A/en not_active Expired - Lifetime
- 1964-06-05 FR FR977243A patent/FR1398262A/fr not_active Expired
- 1964-06-08 GB GB23606/64A patent/GB1060104A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1439246B2 (de) | 1972-09-07 |
| FR1398262A (fr) | 1965-05-07 |
| US3704427A (en) | 1972-11-28 |
| DE1439246A1 (de) | 1968-10-10 |
| GB1060104A (en) | 1967-02-22 |