NL6401189A - - Google Patents

Info

Publication number
NL6401189A
NL6401189A NL6401189A NL6401189A NL6401189A NL 6401189 A NL6401189 A NL 6401189A NL 6401189 A NL6401189 A NL 6401189A NL 6401189 A NL6401189 A NL 6401189A NL 6401189 A NL6401189 A NL 6401189A
Authority
NL
Netherlands
Application number
NL6401189A
Other versions
NL143402B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL646401189A priority Critical patent/NL143402B/xx
Priority to ES0309134A priority patent/ES309134A1/es
Priority to GB5531/65A priority patent/GB1096734A/en
Priority to DE1489426A priority patent/DE1489426C3/de
Priority to BE659706A priority patent/BE659706A/xx
Priority to JP759465A priority patent/JPS424389B1/ja
Priority to FR5437A priority patent/FR1428645A/fr
Priority to US434787A priority patent/US3555283A/en
Publication of NL6401189A publication Critical patent/NL6401189A/xx
Publication of NL143402B publication Critical patent/NL143402B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Luminescent Compositions (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
NL646401189A 1964-02-12 1964-02-12 Halfgeleiderinrichting met een een halfgeleiderlichaam bevattende gestuurde injectierecombinatiestralingsbron. NL143402B (nl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL646401189A NL143402B (nl) 1964-02-12 1964-02-12 Halfgeleiderinrichting met een een halfgeleiderlichaam bevattende gestuurde injectierecombinatiestralingsbron.
ES0309134A ES309134A1 (es) 1964-02-12 1965-02-09 Una disposicion de semiconductor con una fuente de radiacion controlada de inyeccion y recombinacion.
GB5531/65A GB1096734A (en) 1964-02-12 1965-02-09 Improvements in semiconductor arrangements
DE1489426A DE1489426C3 (de) 1964-02-12 1965-02-09 Halbleitervorrichtung mit einer gesteuerten Strahlungsquelle
BE659706A BE659706A (ja) 1964-02-12 1965-02-12
JP759465A JPS424389B1 (ja) 1964-02-12 1965-02-12
FR5437A FR1428645A (fr) 1964-02-12 1965-02-12 Dispositif semi-conducteur muni d'une source de rayonnement de recombinaison par injection commandée
US434787A US3555283A (en) 1964-02-12 1965-02-24 Solid state light emitting diode wherein output is controlled by controlling election population of an intermediate level with an auxiliary light source

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL646401189A NL143402B (nl) 1964-02-12 1964-02-12 Halfgeleiderinrichting met een een halfgeleiderlichaam bevattende gestuurde injectierecombinatiestralingsbron.
US43478765A 1965-02-24 1965-02-24

Publications (2)

Publication Number Publication Date
NL6401189A true NL6401189A (ja) 1965-08-13
NL143402B NL143402B (nl) 1974-09-16

Family

ID=26643717

Family Applications (1)

Application Number Title Priority Date Filing Date
NL646401189A NL143402B (nl) 1964-02-12 1964-02-12 Halfgeleiderinrichting met een een halfgeleiderlichaam bevattende gestuurde injectierecombinatiestralingsbron.

Country Status (5)

Country Link
US (1) US3555283A (ja)
BE (1) BE659706A (ja)
DE (1) DE1489426C3 (ja)
GB (1) GB1096734A (ja)
NL (1) NL143402B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE754437A (fr) * 1969-08-08 1971-01-18 Western Electric Co Dispositif electroluminescent ameliore
US4349906A (en) * 1979-09-18 1982-09-14 Xerox Corporation Optically controlled integrated current diode lasers

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3070698A (en) * 1959-04-17 1962-12-25 Schlumberger Well Surv Corp Quantummechanical counters
US3171031A (en) * 1961-07-31 1965-02-23 Bell Telephone Labor Inc Optical maser modulators
BE639066A (ja) * 1962-10-24 1900-01-01
US3229104A (en) * 1962-12-24 1966-01-11 Ibm Four terminal electro-optical semiconductor device using light coupling
US3333101A (en) * 1963-02-07 1967-07-25 Spectra Physics Electromagnetic energy conversion and detection system and method
DE1264513C2 (de) * 1963-11-29 1973-01-25 Texas Instruments Inc Bezugspotentialfreier gleichstromdifferenzverstaerker

Also Published As

Publication number Publication date
DE1489426B2 (de) 1975-01-09
NL143402B (nl) 1974-09-16
GB1096734A (en) 1967-12-29
DE1489426C3 (de) 1975-08-21
BE659706A (ja) 1965-08-12
DE1489426A1 (de) 1969-04-24
US3555283A (en) 1971-01-12

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