NL299208A - - Google Patents

Info

Publication number
NL299208A
NL299208A NL299208DA NL299208A NL 299208 A NL299208 A NL 299208A NL 299208D A NL299208D A NL 299208DA NL 299208 A NL299208 A NL 299208A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL299208A publication Critical patent/NL299208A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
NL299208D 1962-10-30 NL299208A (US20020095090A1-20020718-M00002.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US234150A US3248670A (en) 1962-10-30 1962-10-30 Semiconductor laser with optical cavity

Publications (1)

Publication Number Publication Date
NL299208A true NL299208A (US20020095090A1-20020718-M00002.png)

Family

ID=22880157

Family Applications (1)

Application Number Title Priority Date Filing Date
NL299208D NL299208A (US20020095090A1-20020718-M00002.png) 1962-10-30

Country Status (6)

Country Link
US (1) US3248670A (US20020095090A1-20020718-M00002.png)
BE (1) BE639365A (US20020095090A1-20020718-M00002.png)
CH (1) CH414029A (US20020095090A1-20020718-M00002.png)
DE (1) DE1464711C3 (US20020095090A1-20020718-M00002.png)
GB (1) GB995950A (US20020095090A1-20020718-M00002.png)
NL (1) NL299208A (US20020095090A1-20020718-M00002.png)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3363195A (en) * 1963-07-01 1968-01-09 Bell Telephone Labor Inc Junction diode maser
US3330991A (en) * 1963-07-12 1967-07-11 Raytheon Co Non-thermionic electron emission devices
US3359509A (en) * 1964-02-19 1967-12-19 Gen Electric Semiconductive junction laser with temperature compensation
US3300671A (en) * 1964-03-10 1967-01-24 Gen Electric Surface-adjacent junction electroluminescent device
US3531735A (en) * 1966-06-28 1970-09-29 Gen Electric Semiconductor laser having grooves to prevent radiation transverse to the optical axis
US3701047A (en) * 1966-08-16 1972-10-24 Rca Corp Semiconductor laser devices utilizing light reflective metallic layers
US3522388A (en) * 1966-11-30 1970-07-28 Norton Research Corp Electroluminescent diode light source having a permanent implanted opaque surface layer mask
US3522389A (en) * 1966-12-06 1970-07-28 Norton Research Corp Masked film recording electroluminescent diode light source having a transparent filled mask aperture
US3526851A (en) * 1967-07-10 1970-09-01 Rca Corp Filamentary structure injection laser having a very narrow active junction
DE1614846B2 (de) * 1967-07-26 1976-09-23 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Halbleiterdiodenanordnung
US3824493A (en) * 1972-09-05 1974-07-16 Bell Telephone Labor Inc Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror
NL7312139A (US20020095090A1-20020718-M00002.png) * 1972-09-08 1974-03-12
GB2175176A (en) * 1985-05-10 1986-11-19 Philips Electronic And Assaoci Signal transmission arrangement, a transmitter and a receiver for such an arrangement and a communication system including such an arrangement

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2953730A (en) * 1952-11-07 1960-09-20 Rca Corp High frequency semiconductor devices
NL251064A (US20020095090A1-20020718-M00002.png) * 1955-11-04
US3039362A (en) * 1958-05-09 1962-06-19 Ca Nat Research Council Narrow band interference filter
US3102201A (en) * 1958-12-15 1963-08-27 Rca Corp Semiconductor device for generating modulated radiation
USRE25632E (en) * 1960-01-11 1964-08-18 Optical maser
NL294147A (US20020095090A1-20020718-M00002.png) * 1960-10-07

Also Published As

Publication number Publication date
DE1464711A1 (de) 1969-05-14
DE1464711B2 (de) 1973-08-23
DE1464711C3 (de) 1974-03-28
CH414029A (de) 1966-05-31
BE639365A (US20020095090A1-20020718-M00002.png)
US3248670A (en) 1966-04-26
GB995950A (en) 1965-06-23

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