NL297821A - - Google Patents

Info

Publication number
NL297821A
NL297821A NL297821DA NL297821A NL 297821 A NL297821 A NL 297821A NL 297821D A NL297821D A NL 297821DA NL 297821 A NL297821 A NL 297821A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL297821A publication Critical patent/NL297821A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/151Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
NL297821D 1962-10-08 NL297821A (US20020095090A1-20020718-M00002.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US228807A US3244950A (en) 1962-10-08 1962-10-08 Reverse epitaxial transistor

Publications (1)

Publication Number Publication Date
NL297821A true NL297821A (US20020095090A1-20020718-M00002.png)

Family

ID=22858627

Family Applications (1)

Application Number Title Priority Date Filing Date
NL297821D NL297821A (US20020095090A1-20020718-M00002.png) 1962-10-08

Country Status (4)

Country Link
US (1) US3244950A (US20020095090A1-20020718-M00002.png)
DE (1) DE1222166B (US20020095090A1-20020718-M00002.png)
GB (1) GB1050478A (US20020095090A1-20020718-M00002.png)
NL (1) NL297821A (US20020095090A1-20020718-M00002.png)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328214A (en) * 1963-04-22 1967-06-27 Siliconix Inc Process for manufacturing horizontal transistor structure
NL143074B (nl) * 1963-12-13 1974-08-15 Philips Nv Transistor.
GB1071294A (en) * 1963-12-17 1967-06-07 Mullard Ltd Improvements in and relating to the manufacture of transistors
US3325707A (en) * 1965-04-26 1967-06-13 Rca Corp Transistor with low collector capacitance and method of making same
US3440498A (en) * 1966-03-14 1969-04-22 Nat Semiconductor Corp Contacts for insulation isolated semiconductor integrated circuitry
US3443174A (en) * 1966-05-17 1969-05-06 Sprague Electric Co L-h junction lateral transistor
US3475665A (en) * 1966-08-03 1969-10-28 Trw Inc Electrode lead for semiconductor active devices
US3453504A (en) * 1966-08-11 1969-07-01 Siliconix Inc Unipolar transistor
US3460009A (en) * 1967-12-29 1969-08-05 Westinghouse Electric Corp Constant gain power transistor
DE1764241C3 (de) * 1968-04-30 1978-09-07 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiterschaltung
JPS4831021B1 (US20020095090A1-20020718-M00002.png) * 1968-09-14 1973-09-26
US3659675A (en) * 1969-06-30 1972-05-02 Transportation Specialists Inc Lubrication system and reservoir therefor
US3631313A (en) * 1969-11-06 1971-12-28 Intel Corp Resistor for integrated circuit
BE758682A (fr) * 1969-11-10 1971-05-10 Ibm Procede de fabrication d'un transistor a socle
BE758745A (fr) * 1969-11-10 1971-05-10 Westinghouse Electric Corp Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs
US3717515A (en) * 1969-11-10 1973-02-20 Ibm Process for fabricating a pedestal transistor
US3657612A (en) * 1970-04-20 1972-04-18 Ibm Inverse transistor with high current gain
US3702947A (en) * 1970-10-21 1972-11-14 Itt Monolithic darlington transistors with common collector and seperate subcollectors
DE2211384A1 (de) * 1971-03-20 1972-11-30 Philips Nv Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung
US4032372A (en) * 1971-04-28 1977-06-28 International Business Machines Corporation Epitaxial outdiffusion technique for integrated bipolar and field effect transistors
US3814997A (en) * 1971-06-11 1974-06-04 Hitachi Ltd Semiconductor device suitable for impatt diodes or varactor diodes
US3891479A (en) * 1971-10-19 1975-06-24 Motorola Inc Method of making a high current Schottky barrier device
US3865648A (en) * 1972-01-07 1975-02-11 Ibm Method of making a common emitter transistor integrated circuit structure
US4171995A (en) * 1975-10-20 1979-10-23 Semiconductor Research Foundation Epitaxial deposition process for producing an electrostatic induction type thyristor
DE2554426C3 (de) * 1975-12-03 1979-06-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor
US4170501A (en) * 1978-02-15 1979-10-09 Rca Corporation Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition
US4328611A (en) * 1980-04-28 1982-05-11 Trw Inc. Method for manufacture of an interdigitated collector structure utilizing etch and refill techniques
US4812890A (en) * 1985-11-19 1989-03-14 Thompson-Csf Components Corporation Bipolar microwave integratable transistor
JPH04261026A (ja) * 1991-01-08 1992-09-17 Mitsubishi Electric Corp 半導体装置及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE519804A (US20020095090A1-20020718-M00002.png) * 1952-05-09
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions
NL111773C (US20020095090A1-20020718-M00002.png) * 1958-08-07
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3133336A (en) * 1959-12-30 1964-05-19 Ibm Semiconductor device fabrication
NL260481A (US20020095090A1-20020718-M00002.png) * 1960-02-08
NL127213C (US20020095090A1-20020718-M00002.png) * 1960-06-10

Also Published As

Publication number Publication date
GB1050478A (US20020095090A1-20020718-M00002.png)
US3244950A (en) 1966-04-05
DE1222166B (de) 1966-08-04

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