NL266797A - - Google Patents

Info

Publication number
NL266797A
NL266797A NL266797DA NL266797A NL 266797 A NL266797 A NL 266797A NL 266797D A NL266797D A NL 266797DA NL 266797 A NL266797 A NL 266797A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL266797A publication Critical patent/NL266797A/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
    • H03F3/12—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B15/00—Suppression or limitation of noise or interference
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B15/00—Suppression or limitation of noise or interference
    • H04B15/02—Reducing interference from electric apparatus by means located at or near the interfering apparatus
    • H04B15/04—Reducing interference from electric apparatus by means located at or near the interfering apparatus the interference being caused by substantially sinusoidal oscillations, e.g. in a receiver or in a tape-recorder
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2202/00—Aspects of oscillators relating to reduction of undesired oscillations
    • H03B2202/03—Reduction of undesired oscillations originated from internal parasitic couplings, i.e. parasitic couplings within the oscillator itself
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Coils Or Transformers For Communication (AREA)
NL266797D 1961-07-07 NL266797A (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL266797 1961-07-07

Publications (1)

Publication Number Publication Date
NL266797A true NL266797A (OSRAM)

Family

ID=19753141

Family Applications (1)

Application Number Title Priority Date Filing Date
NL266797D NL266797A (OSRAM) 1961-07-07

Country Status (4)

Country Link
US (1) US3168713A (OSRAM)
CH (1) CH406326A (OSRAM)
GB (1) GB935445A (OSRAM)
NL (1) NL266797A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3469208A (en) * 1965-02-27 1969-09-23 Hitachi Ltd Microwave solid-state oscillator device and a method for varying the oscillation frequency thereof
US3465265A (en) * 1965-09-13 1969-09-02 Tokyo Shibaura Electric Co Frequency modulator using an n-type semiconductor oscillation device
US4100510A (en) * 1975-07-07 1978-07-11 Selenia-Industrie Elettroniche Associate S.P.A. Stabilization systems for IMPATT diode microwave oscillators or amplifiers, and similar active components
US4359700A (en) * 1980-10-07 1982-11-16 The Bendix Corporation Balancing network for microwave power combiner

Also Published As

Publication number Publication date
US3168713A (en) 1965-02-02
GB935445A (en) 1963-08-28
CH406326A (de) 1966-01-31

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