NL262176A - - Google Patents
Info
- Publication number
- NL262176A NL262176A NL262176DA NL262176A NL 262176 A NL262176 A NL 262176A NL 262176D A NL262176D A NL 262176DA NL 262176 A NL262176 A NL 262176A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14396A US3093520A (en) | 1960-03-11 | 1960-03-11 | Semiconductor dendritic crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL262176A true NL262176A (https=) | 1900-01-01 |
Family
ID=21765246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL262176D NL262176A (https=) | 1960-03-11 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3093520A (https=) |
| CH (1) | CH412818A (https=) |
| GB (1) | GB923409A (https=) |
| NL (1) | NL262176A (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3295030A (en) * | 1963-12-18 | 1966-12-27 | Signetics Corp | Field effect transistor and method |
| US3283223A (en) * | 1963-12-27 | 1966-11-01 | Ibm | Transistor and method of fabrication to minimize surface recombination effects |
| DE3049376A1 (de) | 1980-12-29 | 1982-07-29 | Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen | Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze |
| US4786479A (en) * | 1987-09-02 | 1988-11-22 | The United States Of America As Represented By The United States Department Of Energy | Apparatus for dendritic web growth systems |
| US4927489A (en) * | 1988-06-02 | 1990-05-22 | Westinghouse Electric Corp. | Method for doping a melt |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2928761A (en) * | 1954-07-01 | 1960-03-15 | Siemens Ag | Methods of producing junction-type semi-conductor devices |
| US2935478A (en) * | 1955-09-06 | 1960-05-03 | Gen Electric Co Ltd | Production of semi-conductor bodies |
| US2879189A (en) * | 1956-11-21 | 1959-03-24 | Shockley William | Method for growing junction semi-conductive devices |
| US2954307A (en) * | 1957-03-18 | 1960-09-27 | Shockley William | Grain boundary semiconductor device and method |
| US2929753A (en) * | 1957-04-11 | 1960-03-22 | Beckman Instruments Inc | Transistor structure and method |
| US2937114A (en) * | 1959-05-29 | 1960-05-17 | Shockley Transistor Corp | Semiconductive device and method |
-
0
- NL NL262176D patent/NL262176A/xx unknown
-
1960
- 1960-03-11 US US14396A patent/US3093520A/en not_active Expired - Lifetime
-
1961
- 1961-02-20 GB GB6141/61A patent/GB923409A/en not_active Expired
- 1961-03-07 CH CH271961A patent/CH412818A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3093520A (en) | 1963-06-11 |
| CH412818A (de) | 1966-05-15 |
| GB923409A (en) | 1963-04-10 |