NL256734A - - Google Patents

Info

Publication number
NL256734A
NL256734A NL256734DA NL256734A NL 256734 A NL256734 A NL 256734A NL 256734D A NL256734D A NL 256734DA NL 256734 A NL256734 A NL 256734A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL256734A publication Critical patent/NL256734A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL256734D 1959-10-28 NL256734A (US08177716-20120515-C00003.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US849413A US3155551A (en) 1959-10-28 1959-10-28 Diffusion of semiconductor bodies

Publications (1)

Publication Number Publication Date
NL256734A true NL256734A (US08177716-20120515-C00003.png)

Family

ID=25305719

Family Applications (1)

Application Number Title Priority Date Filing Date
NL256734D NL256734A (US08177716-20120515-C00003.png) 1959-10-28

Country Status (7)

Country Link
US (1) US3155551A (US08177716-20120515-C00003.png)
BE (1) BE596366A (US08177716-20120515-C00003.png)
CA (1) CA673999A (US08177716-20120515-C00003.png)
DE (1) DE1286644B (US08177716-20120515-C00003.png)
FR (1) FR1274727A (US08177716-20120515-C00003.png)
GB (1) GB972853A (US08177716-20120515-C00003.png)
NL (1) NL256734A (US08177716-20120515-C00003.png)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345221A (en) * 1963-04-10 1967-10-03 Motorola Inc Method of making a semiconductor device having improved pn junction avalanche characteristics
US3319311A (en) * 1963-05-24 1967-05-16 Ibm Semiconductor devices and their fabrication
US3418180A (en) * 1965-06-14 1968-12-24 Ncr Co p-n junction formation by thermal oxydation
FR1557080A (US08177716-20120515-C00003.png) * 1967-12-14 1969-02-14
US3650854A (en) * 1970-08-03 1972-03-21 Ibm Method of fabricating a transistor having improved emitter-base junction breakdown voltage characteristics
GB2135118B (en) * 1983-02-09 1986-10-08 Westinghouse Brake & Signal Thyristors
US4605451A (en) * 1984-08-08 1986-08-12 Westinghouse Brake And Signal Company Limited Process for making thyristor devices
DE19635816A1 (de) * 1996-09-04 1998-03-05 Forschungszentrum Juelich Gmbh Verfahren zur Einstellung der elektrischen Leitfähigkeit in dotierten Oberflächenschichten von Halbleitern

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2629800A (en) * 1950-04-15 1953-02-24 Bell Telephone Labor Inc Semiconductor signal translating device
BE509317A (US08177716-20120515-C00003.png) * 1951-03-07 1900-01-01
US2849014A (en) * 1952-05-28 1958-08-26 Bowser Inc Liquid proportioner
US2784121A (en) * 1952-11-20 1957-03-05 Bell Telephone Labor Inc Method of fabricating semiconductor bodies for translating devices
US2815303A (en) * 1953-07-24 1957-12-03 Raythcon Mfg Company Method of making junction single crystals
US2817351A (en) * 1953-11-16 1957-12-24 Honeywell Regulator Co Control apparatus
AT187556B (de) * 1954-03-05 1956-11-10 Western Electric Co Verfahren zur Herstellung eines Halbleiters mit einer PN-Verbindung
DE1018558B (de) * 1954-07-15 1957-10-31 Siemens Ag Verfahren zur Herstellung von Richtleitern, Transistoren u. dgl. aus einem Halbleiter
NL107361C (US08177716-20120515-C00003.png) * 1955-04-22 1900-01-01
US2898247A (en) * 1955-10-24 1959-08-04 Ibm Fabrication of diffused junction semi-conductor devices
US2808315A (en) * 1956-01-16 1957-10-01 Bell Telephone Labor Inc Processing of silicon
US2819990A (en) * 1956-04-26 1958-01-14 Bell Telephone Labor Inc Treatment of semiconductive bodies
US2870049A (en) * 1956-07-16 1959-01-20 Rca Corp Semiconductor devices and method of making same
US2827403A (en) * 1956-08-06 1958-03-18 Pacific Semiconductors Inc Method for diffusing active impurities into semiconductor materials
US2953486A (en) * 1959-06-01 1960-09-20 Bell Telephone Labor Inc Junction formation by thermal oxidation of semiconductive material

Also Published As

Publication number Publication date
US3155551A (en) 1964-11-03
DE1286644B (de) 1969-01-09
BE596366A (fr) 1961-02-15
CA673999A (en) 1963-11-12
GB972853A (en) 1964-10-21
FR1274727A (fr) 1961-10-27

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