NL256345A - - Google Patents

Info

Publication number
NL256345A
NL256345A NL256345A NL256345A NL256345A NL 256345 A NL256345 A NL 256345A NL 256345 A NL256345 A NL 256345A NL 256345 A NL256345 A NL 256345A NL 256345 A NL256345 A NL 256345A
Authority
NL
Netherlands
Application number
NL256345A
Other languages
Dutch (nl)
Other versions
NL104321C (nl
Inventor
Albert Schmitz
Boudewijn Bollee
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL256345A priority Critical patent/NL104321C/nl
Priority to US138109A priority patent/US3140452A/en
Priority to DEN20585A priority patent/DE1273602B/de
Priority to CH1110861A priority patent/CH397007A/de
Priority to SE951061A priority patent/SE220253C1/sv
Priority to GB34238/61A priority patent/GB965703A/en
Priority to FR874212A priority patent/FR1301737A/fr
Publication of NL256345A publication Critical patent/NL256345A/nl
Application granted granted Critical
Publication of NL104321C publication Critical patent/NL104321C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B1/00—Details
    • H03B1/04—Reducing undesired oscillations, e.g. harmonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
    • H03B7/143—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device and which comprises an element depending on a voltage or a magnetic field, e.g. varactor- YIG
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
    • H03F3/12—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02—Varying the frequency of the oscillations by electronic means
    • H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
NL256345A 1960-09-28 1960-09-28 Inrichting met een tunneldiode NL104321C (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL256345A NL104321C (nl) 1960-09-28 1960-09-28 Inrichting met een tunneldiode
US138109A US3140452A (en) 1960-09-28 1961-09-14 High-frequency tunnel diode circuit
DEN20585A DE1273602B (de) 1960-09-28 1961-09-23 Schaltungsanordnung mit einer Tunneldiode
CH1110861A CH397007A (de) 1960-09-28 1961-09-25 Vorrichtung mit einer als Oszillator oder Verstärker geschalteten Tunneldiode
SE951061A SE220253C1 (sv) 1960-09-28 1961-09-25 Anordning med en tunneldiod
GB34238/61A GB965703A (en) 1960-09-28 1961-09-25 Improvements in or relating to semiconductor circuit arrangements
FR874212A FR1301737A (fr) 1960-09-28 1961-09-26 Dispositif équipé d'une diode tunnel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL256345A NL104321C (nl) 1960-09-28 1960-09-28 Inrichting met een tunneldiode

Publications (2)

Publication Number Publication Date
NL256345A true NL256345A (en, 2012) 1962-07-16
NL104321C NL104321C (nl) 1963-04-16

Family

ID=19752595

Family Applications (1)

Application Number Title Priority Date Filing Date
NL256345A NL104321C (nl) 1960-09-28 1960-09-28 Inrichting met een tunneldiode

Country Status (7)

Country Link
US (1) US3140452A (en, 2012)
CH (1) CH397007A (en, 2012)
DE (1) DE1273602B (en, 2012)
FR (1) FR1301737A (en, 2012)
GB (1) GB965703A (en, 2012)
NL (1) NL104321C (en, 2012)
SE (1) SE220253C1 (en, 2012)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3209282A (en) * 1962-05-16 1965-09-28 Schnitzler Paul Tunnel diode oscillator
US3343107A (en) * 1963-12-03 1967-09-19 Bell Telephone Labor Inc Semiconductor package
US3321604A (en) * 1964-02-03 1967-05-23 Sunbeam Corp Electronic oven
US3274459A (en) * 1964-05-07 1966-09-20 Sterzer Fred Low impedance coupled transmission line and solid state tunnel diode structure
US3308352A (en) * 1964-06-01 1967-03-07 Tektronix Inc Transmission line mounting structure for semiconductor device
US3418587A (en) * 1965-06-04 1968-12-24 American Electronic Lab High sensitivity and power signal detecting device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1255899A (fr) * 1959-08-05 1961-03-10 Ibm Oscillateur et son procédé de fabrication
US3027501A (en) * 1959-09-29 1962-03-27 Bell Telephone Labor Inc Semiconductive device
US3040186A (en) * 1960-09-19 1962-06-19 Hewlett Packard Co High frequency trigger converters employing negative resistance elements

Also Published As

Publication number Publication date
US3140452A (en) 1964-07-07
CH397007A (de) 1965-08-15
SE220253C1 (sv) 1968-04-30
NL104321C (nl) 1963-04-16
DE1273602B (de) 1968-07-25
FR1301737A (fr) 1962-08-17
GB965703A (en) 1964-08-06

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