NL246032A - - Google Patents
Info
- Publication number
- NL246032A NL246032A NL246032DA NL246032A NL 246032 A NL246032 A NL 246032A NL 246032D A NL246032D A NL 246032DA NL 246032 A NL246032 A NL 246032A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F99/00—Subject matter not provided for in other groups of this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES61490A DE1133474B (de) | 1959-01-27 | 1959-01-27 | Unipolartransistor mit zwei Steuerzonen |
| US855171A US3152294A (en) | 1959-01-27 | 1959-11-24 | Unipolar diffusion transistor |
| US395450A US3380154A (en) | 1959-01-27 | 1964-09-10 | Unipolar diffusion transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL246032A true NL246032A (ru) |
Family
ID=27212650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL246032D NL246032A (ru) | 1959-01-27 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3380154A (ru) |
| BE (1) | BE587009A (ru) |
| CH (1) | CH381327A (ru) |
| DE (1) | DE1133474B (ru) |
| FR (1) | FR1242770A (ru) |
| GB (1) | GB896730A (ru) |
| NL (1) | NL246032A (ru) |
| SE (1) | SE300849B (ru) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7354052B2 (en) * | 2004-03-02 | 2008-04-08 | Honda Motor Co., Ltd. | Suspension device |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA272437A (en) * | 1925-10-22 | 1927-07-19 | Edgar Lilienfeld Julius | Electric current control mechanism |
| US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
| DE1015153B (de) * | 1951-08-24 | 1957-09-05 | Western Electric Co | Halbleiter-Verstaerker mit einem Koerper aus Einkristall-Halbleitermaterial |
| DE966276C (de) * | 1953-03-01 | 1957-07-18 | Siemens Ag | Halbleiteranordnung mit wenigstens zwei Steuerelektroden oder Steuerelektrodengruppenfuer elektronische Abtast- oder Schaltanordnungen |
| NL202404A (ru) * | 1955-02-18 | |||
| BE547274A (ru) * | 1955-06-20 | |||
| BE555318A (ru) * | 1956-03-07 | |||
| US2814853A (en) * | 1956-06-14 | 1957-12-03 | Power Equipment Company | Manufacturing transistors |
| AT202600B (de) * | 1956-12-13 | 1959-03-10 | Philips Nv | Feldeffekt-Transistor und Verfahren zur Herstellung eines solchen Transistors |
| US2967985A (en) * | 1957-04-11 | 1961-01-10 | Shockley | Transistor structure |
| US3010033A (en) * | 1958-01-02 | 1961-11-21 | Clevite Corp | Field effect transistor |
| US2952896A (en) * | 1958-04-11 | 1960-09-20 | Texas Instruments Inc | Fabrication techniques for transistors |
| US3041213A (en) * | 1958-11-17 | 1962-06-26 | Texas Instruments Inc | Diffused junction semiconductor device and method of making |
| US3148284A (en) * | 1959-01-30 | 1964-09-08 | Zenith Radio Corp | Semi-conductor apparatus with field-biasing means |
-
0
- NL NL246032D patent/NL246032A/xx unknown
-
1959
- 1959-01-27 DE DES61490A patent/DE1133474B/de active Pending
- 1959-12-17 FR FR813341A patent/FR1242770A/fr not_active Expired
-
1960
- 1960-01-19 CH CH55660A patent/CH381327A/de unknown
- 1960-01-21 GB GB2299/60A patent/GB896730A/en not_active Expired
- 1960-01-27 SE SE802/60A patent/SE300849B/xx unknown
- 1960-01-27 BE BE587009A patent/BE587009A/fr unknown
-
1964
- 1964-09-10 US US395450A patent/US3380154A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| SE300849B (ru) | 1968-05-13 |
| CH381327A (de) | 1964-08-31 |
| GB896730A (en) | 1962-05-16 |
| FR1242770A (fr) | 1960-09-30 |
| US3380154A (en) | 1968-04-30 |
| DE1133474B (de) | 1962-07-19 |
| BE587009A (fr) | 1960-05-16 |