NL238464A - - Google Patents
Info
- Publication number
- NL238464A NL238464A NL238464DA NL238464A NL 238464 A NL238464 A NL 238464A NL 238464D A NL238464D A NL 238464DA NL 238464 A NL238464 A NL 238464A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US738821A US3058812A (en) | 1958-05-29 | 1958-05-29 | Process and apparatus for producing silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL238464A true NL238464A (fr) |
Family
ID=24969624
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL238464D NL238464A (fr) | 1958-05-29 | ||
| NL124690D NL124690C (fr) | 1958-05-29 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL124690D NL124690C (fr) | 1958-05-29 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3058812A (fr) |
| CH (1) | CH394136A (fr) |
| DE (2) | DE1885923U (fr) |
| FR (1) | FR1225567A (fr) |
| GB (1) | GB875622A (fr) |
| NL (2) | NL124690C (fr) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1061593B (de) * | 1956-06-25 | 1959-07-16 | Siemens Ag | Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke |
| US3310426A (en) * | 1963-10-02 | 1967-03-21 | Siemens Ag | Method and apparatus for producing semiconductor material |
| NL6700080A (fr) * | 1966-01-03 | 1967-07-04 | ||
| US3459152A (en) * | 1964-08-28 | 1969-08-05 | Westinghouse Electric Corp | Apparatus for epitaxially producing a layer on a substrate |
| DE1262244B (de) * | 1964-12-23 | 1968-03-07 | Siemens Ag | Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial |
| DE1297086B (de) * | 1965-01-29 | 1969-06-12 | Siemens Ag | Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial |
| DE2050076C3 (de) * | 1970-10-12 | 1980-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial |
| JPS53106626A (en) * | 1977-03-02 | 1978-09-16 | Komatsu Mfg Co Ltd | Method of making high purity rod silicon and appratus therefor |
| DE2912661C2 (de) * | 1979-03-30 | 1982-06-24 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens |
| US4481232A (en) * | 1983-05-27 | 1984-11-06 | The United States Of America As Represented By The Department Of Energy | Method and apparatus for producing high purity silicon |
| EP2039653B1 (fr) * | 2007-09-20 | 2015-12-23 | Mitsubishi Materials Corporation | Réacteur pour silicium polycristallin et procédé de production de silicium polycristallin |
| MY156940A (en) * | 2008-03-26 | 2016-04-15 | Gt Solar Inc | System and methods for distributing gas in a chemical vapor deposition reactor |
| TWI464292B (zh) * | 2008-03-26 | 2014-12-11 | Gtat Corp | 塗覆金之多晶矽反應器系統和方法 |
| RU2494579C2 (ru) * | 2008-04-14 | 2013-09-27 | Хемлок Семикондактор Корпорейшн | Производственная установка для осаждения материала и электрод для использования в ней |
| CN102047750B (zh) * | 2008-04-14 | 2013-11-06 | 赫姆洛克半导体公司 | 用于沉积材料的制造设备和其中使用的电极 |
| CA2721192A1 (fr) * | 2008-04-14 | 2009-10-22 | Hemlock Semiconductor Corporation | Appareil de fabrication pour deposer un materiau et electrode destinee a etre utilisee dans celui-ci |
| US11015244B2 (en) | 2013-12-30 | 2021-05-25 | Advanced Material Solutions, Llc | Radiation shielding for a CVD reactor |
| US10450649B2 (en) | 2014-01-29 | 2019-10-22 | Gtat Corporation | Reactor filament assembly with enhanced misalignment tolerance |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US410067A (en) * | 1889-08-27 | Process of facilitating chemical reactions | ||
| US1500789A (en) * | 1920-06-17 | 1924-07-08 | Aoyagi Eiji | Electrometallurgical process for manufacture of ductile bodies of high-fusing metals and alloys of same |
| US1829756A (en) * | 1925-06-18 | 1931-11-03 | Siemens Ag | Homogeneous body consisting of rhenium |
| US2441603A (en) * | 1943-07-28 | 1948-05-18 | Bell Telephone Labor Inc | Electrical translating materials and method of making them |
| NL258754A (fr) * | 1954-05-18 | 1900-01-01 | ||
| US2750310A (en) * | 1954-07-17 | 1956-06-12 | Joachim I Franke | Manufacture process of doped germanium crystals |
| US2893850A (en) * | 1956-08-03 | 1959-07-07 | Bichowsky Foord Von | Apparatus for the production of elemental silicon |
-
0
- NL NL238464D patent/NL238464A/xx unknown
- NL NL124690D patent/NL124690C/xx active
-
1958
- 1958-05-29 US US738821A patent/US3058812A/en not_active Expired - Lifetime
-
1959
- 1959-05-14 DE DEW22052U patent/DE1885923U/de not_active Expired
- 1959-05-14 DE DEW25617A patent/DE1142347B/de active Pending
- 1959-05-20 GB GB17138/59A patent/GB875622A/en not_active Expired
- 1959-05-21 CH CH7346259A patent/CH394136A/de unknown
- 1959-05-28 FR FR795886A patent/FR1225567A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3058812A (en) | 1962-10-16 |
| FR1225567A (fr) | 1960-07-01 |
| DE1885923U (de) | 1964-01-16 |
| CH394136A (de) | 1965-06-30 |
| GB875622A (en) | 1961-08-23 |
| NL124690C (fr) | |
| DE1142347B (de) | 1963-01-17 |