NL231057A - - Google Patents

Info

Publication number
NL231057A
NL231057A NL231057DA NL231057A NL 231057 A NL231057 A NL 231057A NL 231057D A NL231057D A NL 231057DA NL 231057 A NL231057 A NL 231057A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL231057A publication Critical patent/NL231057A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/227Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds further characterised by the doping material
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C28/00Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479Application of electric currents or fields, e.g. for electroforming
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL231057D 1957-09-03 NL231057A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB27837/57A GB859588A (en) 1957-09-03 1957-09-03 Photosensitive cells, radiation filters and semiconductor materials for use in such cells and filters

Publications (1)

Publication Number Publication Date
NL231057A true NL231057A (de)

Family

ID=10266108

Family Applications (2)

Application Number Title Priority Date Filing Date
NL231057D NL231057A (de) 1957-09-03
NL113331D NL113331C (de) 1957-09-03

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL113331D NL113331C (de) 1957-09-03

Country Status (5)

Country Link
US (1) US2953690A (de)
DE (1) DE1117790B (de)
FR (1) FR1201933A (de)
GB (1) GB859588A (de)
NL (2) NL113331C (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3069644A (en) * 1959-02-16 1962-12-18 Itt Bolometers
US3171026A (en) * 1961-03-08 1965-02-23 Gen Dynamics Corp Tellurium dosimeter
NL278359A (de) * 1961-05-12
US3202827A (en) * 1961-06-29 1965-08-24 Cummins Chicago Corp Photocell for detecting limited moving shadow areas
US3459945A (en) * 1966-11-07 1969-08-05 Barnes Eng Co Laser calorimeter with cavitated pyroelectric detector and heat sink
US3656944A (en) * 1970-02-16 1972-04-18 Texas Instruments Inc Method of producing homogeneous ingots of a metallic alloy
US3849205A (en) * 1973-08-27 1974-11-19 Texas Instruments Inc Enhancement of solid state recrystallization by induced nucleation
US4376659A (en) * 1981-06-01 1983-03-15 Texas Instruments Incorporated Process for forming semiconductor alloys having a desired bandgap
US4374678A (en) * 1981-06-01 1983-02-22 Texas Instruments Incorporated Process for forming HgCoTe alloys selectively by IR illumination
US4447393A (en) * 1983-02-09 1984-05-08 Texas Instruments Incorporated Oxide-free CdTe synthesis
EP0140625B1 (de) * 1983-10-19 1988-06-08 The Marconi Company Limited Telluriden
US4582683A (en) * 1984-12-03 1986-04-15 Texas Instruments Incorporated (Hg,Cd,Zn)Te crystal compositions
US7611920B1 (en) * 2005-11-17 2009-11-03 Bae Systems Information And Electronic Systems Integration Inc. Photonic coupling scheme for photodetectors

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1824573A (en) * 1925-07-08 1931-09-22 Drahtlose Telegraphie Gmbh Photo-electric tube
DE624339C (de) * 1931-04-02 1936-01-17 Siemens & Halske Akt Ges Photozelle
DE655890C (de) * 1934-06-28 1938-01-25 Siemens App Strahlungsempfindliche Halbleiterzelle
NL88584C (de) * 1950-01-31
US2651700A (en) * 1951-11-24 1953-09-08 Francois F Gans Manufacturing process of cadmium sulfide, selenide, telluride photoconducting cells
US2743430A (en) * 1952-03-01 1956-04-24 Rca Corp Information storage devices

Also Published As

Publication number Publication date
GB859588A (en) 1961-01-25
US2953690A (en) 1960-09-20
DE1117790B (de) 1961-11-23
FR1201933A (fr) 1960-01-06
NL113331C (de)

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