NL230857A - - Google Patents

Info

Publication number
NL230857A
NL230857A NL230857DA NL230857A NL 230857 A NL230857 A NL 230857A NL 230857D A NL230857D A NL 230857DA NL 230857 A NL230857 A NL 230857A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL230857A publication Critical patent/NL230857A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608Silicon carbide
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00Coating starting from inorganic powder
    • C23C24/08Coating starting from inorganic powder by application of heat or pressure and heat
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/107Melt
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/148Silicon carbide
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/931Silicon carbide semiconductor
NL230857D 1958-08-26 NL230857A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL230857 1958-08-26

Publications (1)

Publication Number Publication Date
NL230857A true NL230857A (en)

Family

ID=19751320

Family Applications (2)

Application Number Title Priority Date Filing Date
NL230857D NL230857A (en) 1958-08-26
NL107889D NL107889C (en) 1958-08-26

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL107889D NL107889C (en) 1958-08-26

Country Status (5)

Country Link
US (1) US3121829A (en)
DE (1) DE1106875B (en)
FR (1) FR1233419A (en)
GB (1) GB918393A (en)
NL (2) NL107889C (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3333324A (en) * 1964-09-28 1967-08-01 Rca Corp Method of manufacturing semiconductor devices
US3510733A (en) * 1966-05-13 1970-05-05 Gen Electric Semiconductive crystals of silicon carbide with improved chromium-containing electrical contacts
SU438364A1 (en) * 1972-09-15 1976-07-05 В. И. Павличенко Diode light source on silicon carbide
JPS58223678A (en) * 1982-06-16 1983-12-26 株式会社日立製作所 Sic sintered body with metallized layer and manufacture
JPS6271271A (en) * 1985-09-24 1987-04-01 Sharp Corp Electrode structure of silicon carbide semiconductor
US5061972A (en) * 1988-12-14 1991-10-29 Cree Research, Inc. Fast recovery high temperature rectifying diode formed in silicon carbide
JP2509713B2 (en) * 1989-10-18 1996-06-26 シャープ株式会社 Silicon carbide semiconductor device and manufacturing method thereof
US6573128B1 (en) 2000-11-28 2003-06-03 Cree, Inc. Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
US7262434B2 (en) 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
US9515135B2 (en) * 2003-01-15 2016-12-06 Cree, Inc. Edge termination structures for silicon carbide devices
US7026650B2 (en) * 2003-01-15 2006-04-11 Cree, Inc. Multiple floating guard ring edge termination for silicon carbide devices
WO2005119793A2 (en) * 2004-05-28 2005-12-15 Caracal, Inc. Silicon carbide schottky diodes and fabrication method
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2273704A (en) * 1935-10-10 1942-02-17 Bell Telephone Labor Inc Electrical conducting material
NL198572A (en) * 1954-07-27
DE1073110B (en) * 1957-08-16 1960-01-14 General Electric Company, Schenectady, N Y (V St A) Process for the production of rectifying or ohmic connection contacts on silicon carbide bodies
US2937323A (en) * 1958-05-29 1960-05-17 Westinghouse Electric Corp Fused junctions in silicon carbide

Also Published As

Publication number Publication date
NL107889C (en)
DE1106875B (en) 1961-05-18
GB918393A (en) 1963-02-13
US3121829A (en) 1964-02-18
FR1233419A (en) 1960-10-12

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