NL2032876B1 - Method for preparing thermosensitive thin film with heat insulation buffer layer structure - Google Patents
Method for preparing thermosensitive thin film with heat insulation buffer layer structure Download PDFInfo
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- NL2032876B1 NL2032876B1 NL2032876A NL2032876A NL2032876B1 NL 2032876 B1 NL2032876 B1 NL 2032876B1 NL 2032876 A NL2032876 A NL 2032876A NL 2032876 A NL2032876 A NL 2032876A NL 2032876 B1 NL2032876 B1 NL 2032876B1
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- Netherlands
- Prior art keywords
- silicon
- thin film
- silicon substrate
- buffer layer
- heat insulation
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- 239000010409 thin film Substances 0.000 title claims abstract description 65
- 238000009413 insulation Methods 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 79
- 239000010703 silicon Substances 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 24
- 238000002360 preparation method Methods 0.000 claims description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 239000002210 silicon-based material Substances 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 4
- 229910020630 Co Ni Inorganic materials 0.000 claims description 3
- 229910002440 Co–Ni Inorganic materials 0.000 claims description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000005289 physical deposition Methods 0.000 claims description 3
- 238000007664 blowing Methods 0.000 claims description 2
- 238000004549 pulsed laser deposition Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 239000011148 porous material Substances 0.000 abstract description 2
- 229910021426 porous silicon Inorganic materials 0.000 abstract description 2
- 229960001866 silicon dioxide Drugs 0.000 description 10
- 230000004044 response Effects 0.000 description 8
- 238000011160 research Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/008—Thermistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
Abstract
The present invention discloses a method for preparing a thermosensitive thin film. with a heat insulation buffer layer structure. The method includes: preparing a heat insulation buffer layer on a surface of a silicon substrate; preparing a silicon dioxide insulation layer on a surface of the heat insulation buffer layer; and preparing a thermosensitive thin film. on a surface of the silicon dioxide insulation layer, thus obtaining the thermosensitive thin film. with the heat insulation buffer layer structure. The heat insulation buffer layer is formed into a porous silicon—based structure with different structural characteristics by growing silicon columns, silicon balls or silicon rods; a heat insulation effect between the thermosensitive thin film and the silicon substrate is achieved using air stored inside pores, so that the overall thermal capacity and heat dissipation of the thermosensitive thin film are reduced.
Description
P1540 /NLpd
METHOD FOR PREPARING THERMOSENSITIVE THIN FILM WITH HEAT
INSULATION BUFFER LAYER STRUCTURE
The present invention relates to a method for preparing a thermosensitive thin film with a heat insulation buffer layer structure.
A negative temperature coefficient (NTC) thermistor is a com- mon temperature measurement and control element with the charac- teristics of high temperature measurement accuracy, high sensitiv- ity, good reliability, low cost, long service life and the like.
It is widely used in aviation, marine and civil fields. With the continuous advancement of the electronic industry and the level of an information technology, a modern electronic information system is developing towards miniaturization and monolithic integration.
Compared with a bulk ceramic thermistor, a thin-film NTC thermis- tor more easily achieves objectives of miniaturization, fast re- sponse and integration of temperature sensors, and has a wide ap- plication prospect in the fields of semiconductors, integrated circuits, and micro-nano devices.
Since a thermosensitive thin film is a material relying on a substrate, its structure and characteristics are inevitably af- fected by the substrate. At present, selection of a substrate ma- terial for the thermosensitive thin film is mainly based on three aspects: 1. The thermal expansion coefficient of the substrate should be close to that of the thermosensitive thin film, so that the problem of cracking of the thin film during thermal treatment and thermal environment application can be effectively avoided. 2.
The lattice match degree between the substrate and the material is high, so that it is expected to prepare a high-quality single- crystal epitaxial thin film. 3. The substrate is suitable for a modern semiconductor micro-machining technology, which is condu- cive to the instrumentation and integration of thin films.
Among the above-mentioned various substrate materials, a Si- based substrate has been applied in other passive sensitive thin- film sensors such as magnetoresistive and magnetic sensors due to its advantages of easy integration and low price, and is the most promising substrate material for achieving the application of the thermosensitive thin films. In the process of transitioning from basic research on thermosensitive thin films to practical use of thin-film temperature sensors, in addition to achieving Si-based hetero-growth of a high-quality film with a uniform thickness, the influence of a substrate material on a thermal conduction process of a thin film also needs to be considered. If a thermosensitive thin film is directly deposited on a surface of an ordinary Si substrate, the high thermal conductivity (156W/cm-°C) of the Si substrate will cause heat conduction between the thermosensitive thin film and the substrate, which will imperceptibly increase the thermal capacity of a sensitive unit and prolong the response time of the thin film material. Therefore, it is difficult to meet the demand for fast response and sensing to temperatures in the field of extreme temperature monitoring.
In order to avoid the above problems, the present invention designs a heat insulation layer structure on a surface of a sili- con substrate to ensure that a silicon substrate thermosensitive thin film makes a quick dynamic response to temperatures.
The present invention aims to provide a method for preparing a thermosensitive thin film with a heat insulation buffer layer structure. The method includes: first preparing a heat insulation buffer layer on a surface of a silicon substrate; preparing a sil- icon dioxide insulation layer on a surface of the heat insulation buffer layer; and finally preparing a thermosensitive thin film on a surface of the silicon dioxide insulation layer, thus obtaining the thermosensitive thin film with the heat insulation buffer lay- er structure. The heat insulation buffer layer is formed into a porous silicon-based structure with different structural charac- teristics by growing silicon columns, silicon balls or silicon rods; a heat insulation effect between the thermosensitive thin film and the silicon substrate is achieved using air stored inside pores, so that the overall thermal capacity and heat dissipation of the thermosensitive thin film are reduced; the response time of a thermistor is shortened; and the thermosensitive thin film is extremely applicable to the field of fast-response temperature monitoring. The thermosensitive thin film with the heat insulation buffer layer structure obtained by the method of the present in- vention solves the key technical problem in a process of transi- tioning of a thermosensitive thin film from basic research to practical use research. The method is easy to achieve, good in re- petitiveness, easy to operate and applicable to various thermosen- sitive thin films, and is general to development of all types of thermosensitive thin films.
The present invention discloses a method for preparing a thermosensitive thin film with a heat insulation buffer layer structure. The method is carried out according to the following steps: a. preparation of a heat insulation buffer layer: first im- mersing a purchased silicon substrate (1) in acetone, absolute ethanol and deionized water in sequence for ultrasonic washing for three times, each washing time being 5-10 min; taking out the sil- icon substrate (1); blowing a surface of the silicon substrate (1) to dry with high-purity nitrogen; manufacturing masks with various shapes on the surface of the silicon substrate (1), and putting the silicon substrate (1) into a cavity of electron beam evapora- tion equipment; growing silicon materials (2) at hollow parts of the masks on the surface of the silicon substrate (1) to form sil- icon columns, silicon balls or silicon rods; controlling heights of the silicon materials (2) of the silicon columns, silicon balls or silicon rods to be 10 nm to 200 um by means of adjusting a voltage to 1-2 kV and evaporation time to 5-60 min; and achieving heat insulation using air stored in holes (3) at gaps between the silicon columns, silicon balls or silicon rods; b. preparation of a silicon dioxide insulation layer: putting the silicon substrate (1) prepared in the step a into a thermal oxidation furnace for thermal oxidization at a temperature of 500- 1,050°C and an oxygen pressure of 10°-10° Pa for 30-120 min, thus obtaining the silicon dioxide insulation layer (4) with a growth thickness of 100-500 nm; c. preparation of a thermosensitive thin film: preparing a thermosensitive thin film material on the surface of the silicon substrate (1) obtained in the step b by using a magnetron sputter- ing or pulsed laser deposition or ion beam evaporation physical deposition method, wherein the thermosensitive thin film material is a vanadium oxide or Mn-Co-Ni-based negative temperature coeffi- cient (NTC) thermistor material (5).
According to the method for preparing a thermosensitive thin film with a heat insulation buffer layer structure, the thermosen- sitive thin film with the heat insulation buffer layer structure obtained by the method of the present invention solves the key technical problem in a process of transitioning of a thermosensi- tive thin film from basic research to practical use research. The method is applicable to various thermosensitive thin films, and is general to development of all types of thermosensitive thin films.
The thermosensitive thin film can be developed into a micro ther- mosensitive resistor with a fast response characteristic.
FIG. 1 is a schematic structural diagram of a thermosensitive thin film with a heat insulation buffer layer structure of the present invention.
FIG. 2 is an X-Ray Diffraction (XRD) spectrum of a thermosen- sitive thin film material with a heat insulation buffer layer structure.
FIG. 3 is an Atomic Force Microscope (AFM) diagram of a ther- mosensitive thin film material with a heat insulation buffer layer structure.
FIG. 4 is a resistance-temperature relationship diagram of a thermosensitive thin film element with a heat insulation buffer layer structure.
FIG. 5 shows response time of a thermosensitive thin film el- ement with a heat insulation buffer layer structure.
Embodiment 1 a. Preparation of a heat insulation buffer layer: a purchased gilicon substrate 1 is first immersed in acetone, absolute ethanol 5 and deionized water in sequence for ultrasonic washing for three times, each washing time being 5 min; the silicon substrate 1 is taken out; a surface of the silicon substrate 1 is blown to dry with high-purity nitrogen; masks with various shapes are manufac- tured on the surface of the silicon substrate 1, and the silicon substrate 1 is put into a cavity of electron beam evaporation equipment; silicon materials 2 are grown at hollow parts of the masks on the surface of the silicon substrate 1 to form silicon columns; heights of the silicon materials 2 of the silicon columns are controlled to be 10 nm by means of adjusting a voltage to 1 kV and evaporation time to 5 min; and heat insulation is achieved by using air stored in holes 3 at gaps between the silicon columns. b. Preparation of a silicon dioxide insulation layer: the silicon substrate 1 prepared in the step a is put into a thermal oxidation furnace for thermal oxidization at a temperature of 500°C and an oxygen pressure of 10° Pa for 30 min, thus obtaining the silicon dioxide insulation layer 4 with a growth thickness of 100 nm. c. Preparation of a thermosensitive thin film: a thermosensi- tive thin film material is prepared on the surface of the silicon substrate 1 obtained in the step b by using a magnetron sputtering method, wherein the thermosensitive thin film material is a vana- dium oxide NTC thermistor material 5.
Embodiment 2 a. Preparation of a heat insulation buffer layer: a purchased silicon substrate 1 is first immersed in acetone, absolute ethanol and deionized water in sequence for ultrasonic washing for three times, each washing time being 10 min; the silicon substrate 1 is taken out; a surface of the silicon substrate 1 is blown to dry with high-purity nitrogen; masks with various shapes are manufac- tured on the surface of the silicon substrate 1, and the silicon substrate 1 is put into a cavity of electron beam evaporation equipment; silicon materials 2 are grown at hollow parts of the masks on the surface of the silicon substrate 1 to form silicon balls; heights of the silicon materials 2 of the silicon balls are controlled to be 200 um by means of adjusting a voltage to 2 kV and evaporation time to 60 min; and heat insulation is achieved by using air stored in holes 3 at gaps between the silicon balls. b. Preparation of a silicon dioxide insulation layer: the silicon substrate 1 prepared in the step a is put into a thermal oxidation furnace for thermal oxidization at a temperature of 1,050°C and an oxygen pressure of 10° Pa for 120 min, thus obtain- ing the silicon dioxide insulation layer 4 with a growth thickness of 500 nm. c. Preparation of a thermosensitive thin film: a thermosensi- tive thin film material is prepared on the surface of the silicon substrate 1 obtained in the step b by using a pulse laser deposi- tion method, wherein the thermosensitive thin film material is a
Mn-Co-Ni NTC thermistor material 5.
Embodiment 3 a. Preparation of a heat insulation buffer layer: a purchased silicon substrate 1 is first immersed in acetone, absolute ethanol and deionized water in sequence for ultrasonic washing for three times, each washing time being 8 min; the silicon substrate 1 is taken out; a surface of the silicon substrate 1 is blown to dry with high-purity nitrogen; masks with various shapes are manufac- tured on the surface of the silicon substrate 1, and the silicon substrate 1 is put into a cavity of electron beam evaporation equipment; silicon materials 2 are grown at hollow parts of the masks on the surface of the silicon substrate 1 to form silicon rods; heights of the silicon materials 2 of the silicon rods are controlled to be 150 um by means of adjusting a voltage to 1.5 kV and evaporation time to 20 min; and heat insulation is achieved by using air stored in holes 3 at gaps between the silicon rods. b. Preparation of a silicon dioxide insulation layer: the silicon substrate 1 prepared in the step a is put into a thermal oxidation furnace for thermal oxidization at a temperature of 1,000°C and an oxygen pressure of 10% Pa for 100 min, thus obtain- ing the silicon dioxide insulation layer 4 with a growth thickness of 300 nm.
c. Preparation of a thermosensitive thin film: a thermosensi- tive thin film material is prepared on the surface of the silicon substrate 1 obtained in the step b by using a ion beam evaporation physical deposition method, wherein the thermosensitive thin film material is a vanadium oxide NTC thermistor material 5.
Embodiment 4
An XRD test shown in FIG. 2, an AFM test shown in FIG. 3, an electric property test shown in FIG. 4 and a response time test shown in FIG. 5 are carried out on any thermosensitive thin film material with the heat insulation buffer layer structure obtained in Embodiments 1-3. Results are as shown in the figures. It can be seen from the figures that the response time of the thin film with the heat insulation buffer layer structure is shorter than the re- sponse time of a thermosensitive thin film on the surface of an ordinary silicon substrate.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2032876A NL2032876B1 (en) | 2022-08-29 | 2022-08-29 | Method for preparing thermosensitive thin film with heat insulation buffer layer structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2032876A NL2032876B1 (en) | 2022-08-29 | 2022-08-29 | Method for preparing thermosensitive thin film with heat insulation buffer layer structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2032876B1 true NL2032876B1 (en) | 2024-03-12 |
Family
ID=90300566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2032876A NL2032876B1 (en) | 2022-08-29 | 2022-08-29 | Method for preparing thermosensitive thin film with heat insulation buffer layer structure |
Country Status (1)
| Country | Link |
|---|---|
| NL (1) | NL2032876B1 (en) |
-
2022
- 2022-08-29 NL NL2032876A patent/NL2032876B1/en active
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