NL2030428A - Method for synthesizing helical carbon nanotube (hcnt)-cnt heterojunction - Google Patents
Method for synthesizing helical carbon nanotube (hcnt)-cnt heterojunction Download PDFInfo
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- NL2030428A NL2030428A NL2030428A NL2030428A NL2030428A NL 2030428 A NL2030428 A NL 2030428A NL 2030428 A NL2030428 A NL 2030428A NL 2030428 A NL2030428 A NL 2030428A NL 2030428 A NL2030428 A NL 2030428A
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- heterojunction
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000002194 synthesizing effect Effects 0.000 title claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 10
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000002105 nanoparticle Substances 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 12
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 12
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims abstract description 12
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 11
- 239000001257 hydrogen Substances 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 9
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 9
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052786 argon Inorganic materials 0.000 claims abstract description 6
- 239000003054 catalyst Substances 0.000 claims abstract description 5
- 239000012300 argon atmosphere Substances 0.000 claims abstract description 3
- 239000012298 atmosphere Substances 0.000 claims abstract description 3
- 238000001816 cooling Methods 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 150000002815 nickel Chemical class 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 claims description 2
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 claims description 2
- 238000001354 calcination Methods 0.000 claims description 2
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 229940078494 nickel acetate Drugs 0.000 claims description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims description 2
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 7
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- YASYEJJMZJALEJ-UHFFFAOYSA-N Citric acid monohydrate Chemical compound O.OC(=O)CC(O)(C(O)=O)CC(O)=O YASYEJJMZJALEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229960004106 citric acid Drugs 0.000 description 1
- 229960002303 citric acid monohydrate Drugs 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- AOPCKOPZYFFEDA-UHFFFAOYSA-N nickel(2+);dinitrate;hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O AOPCKOPZYFFEDA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
- B01J23/755—Nickel
-
- B01J35/23—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/0547—Nanofibres or nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/18—Non-metallic particles coated with metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/20—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds
- B22F9/22—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds using gaseous reductors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G53/00—Compounds of nickel
- C01G53/04—Oxides; Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
- C22C2026/002—Carbon nanotubes
Abstract
U I T T R E K S E L A method for synthesizing a helical carbon nanotube (HCNT)—CNT heterojunction. The method includes the following steps: taking nickel oxide nanoparticles into a tube furnace, and heating to 400°C in a hydrogen atmosphere for 1 hour to obtain nickel 5 nanoparticles; and introducing a mixed gas of acetylene and ammonia into the tube furnace using the nickel nanoparticles as a catalyst, and heating to a temperature of 450i25°C and holding the temperature for 4 hours; and stopping introducing the acetylene and the ammonia and introducing argon, and naturally cooling to a 10 room temperature in an argon atmosphere to obtain the HCNT—CNT heterojunction. The present disclosure is simple and feasible, can obtain the HCNT—CNT heterojunction with high efficiency which is easy to disperse, adds a new member to the CNT heterojunction family, and has important value in the research and application of 15 low—dimensional pure carbon heterojunctions. (+ Fig. la)
Description
TECHNICAL FIELD The present disclosure relates to a method for synthesizing a helical carbon nanotube (HCNT)-CNT heterojunction, which has im- portant value in the research and application of low-dimensional pure carbon heterojunctions.
BACKGROUND ART Heterojunctions or homojunctions are mainly used in the field of electronic circuits or optoelectronics as components, and play a vital role in the development of human society and the advance- ment of science and technology. With increasing integration, a new generation of heterojunction or homojunction components will inev- itably be in the nanometer scale. A pure carbon heterojunction is widely favored by researchers due to its many superior properties. In the 1990s, researchers designed and constructed a pure CNT heterojunction model by introducing 5-membered ring and 7-membered ring defects into a 6-membered ring network of a single CNT. In 2001, researchers clearly observed heterojunctions formed by CNTs with different chirality indexes connected head-to-head experimen- tally using scanning tunneling microscopes (STMs) for the first time (Ouyang et al., Science, 2001, Vol. 291, pp. 27-100), which is the begining of nano-integrated circuits. Because CNTs can ex- hibit metal or semiconductor properties according to their differ- ent diameters and chirality indexes, CNT heterojunctions can be metal-metal junctions, metal-semiconductor junctions, and semicon- ductor-semiconductor junctions. These different junctions can be made into diodes, rectifiers, and electro-optical devices of a single CNT, which will occupy an important position and play an extremely important role in the rapidly emerging micro-nano era. The currently reported CNT heterojunctions are all straight CNTs connected to each other, while the inventors synthesized a pure carbon heterojunction composed of HCNTs and the straight CNTs connected to each other. The HCNTs are of a spring-like helical structure formed by periodically inserting 5-membered rings and 7- membered rings in the 6-membered ring network of the straight CNTs. It is very different from the CNT in morphology and struc- ture. Obviously, a HCNT-CNT heterojunction is a new type of quasi- one-dimensional pure carbon heterojunction, and its band structure and electrical and optical properties may be different from the straight CNT heterojunction. It may have important application value in future nano-integrated circuits and nano-electro-optical devices.
SUMMARY An objective of the present disclosure is to provide a method for synthesizing a HCNT-CNT heterojunction which is easy to manip- ulate and practical.
The following specific steps are performed.
A method for synthesizing a HCNT-CNT heterojunction is pro- vided. A catalytic chemical vapor deposition (CCVD) method is used, and nickel nanoparticles are used as a catalyst. The method may include the following specific steps: {1) taking nickel oxide nanoparticles into a tube furnace, and heating to 400°C in a hydrogen atmosphere for 1 hour to obtain the nickel nanoparticles; and (2) introducing a mixed gas of acetylene and ammonia into the tube furnace using the nickel nanoparticles obtained in step (1) as the catalyst, and heating to a temperature of 450+25°C and hold- ing the temperature for 4 hours; and stopping introducing the acetylene and the ammonia and introducing argon, and naturally cooling to a room temperature in an argon atmosphere to obtain the HCNT-CNT heterojunction.
A method for preparing the nickel oxide nanoparticles may be: (a) dissolving nickel salt and citric acid in absolute etha- nol in a molar ratio of 1:3; (b) stirring continuously for 6 hours at 60°C in a water bath; (c) basically drying a solution after stirring at 85°C, and then completely drying at 175°C; and (d) calcining a dried product in a muffle furnace at 400°C for 4 hours to obtain the nickel oxide nanoparticles.
Further, the nickel salt may be selected from the group con- sisting of nickel nitrate, nickel chloride, and nickel acetate.
Raw materials used in the above process should be at least of analytical purity.
A process of the present disclosure may be completed in a chemical vapor deposition (CVD) system. Quartz tubes may be used as a reactor, and air in the reactor needs to be exhausted before a horizontal tube furnace is heated to avoid explosion.
Heating may be conducted from 400°C to 450+25°%C at a heating rate of 5°C/min. The acetylene used may be of industrial purity, and hydrogen, the ammonia, and the argon may be of high purity. The acetylene and the ammonia are input at the same time, and a ratio of the acetylene and the ammonia can be controlled by a flow meter.
Since the nickel nanoparticles are easy to oxidize in the air, only a small number of the nickel nanoparticles are taken for completion of hydrogen reduction during synthesis of the HCNT-CNT heterojunction. 0.025 g of the nickel oxide nanoparticles are weighed and placed in the horizontal tube furnace, and hydrogen is input, and reduced at 400°C for 1 hour to obtain the nickel nano- particles.
The present disclosure is simple and feasible, can obtain the HCNT-CNT heterojunction with high efficiency which is easy to dis- perse, adds a new member to the CNT heterojunction family, and has important value in the research and application of low-dimensional pure carbon heterojunctions.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. la is a field emission scanning electron microscope (FE- SEM) photograph of HCNT-CNT heterojunctions obtained in Example 1 of the present disclosure; FIG. 1b is a transmission electron microscope (TEM) photo- graph of the HCNT-CNT heterojunction obtained in Example 1 of the present disclosure; FIG. Za is a FE-SEM photograph of HCNT-CNT heterojunctions obtained in Example 2 of the present disclosure; FIG. 2b is a TEM photograph of the HCNT-CNT heterojunction obtained in Example 2 of the present disclosure; FIG. 3a is a FE-SEM photograph of HCNT-CNT heterojunctions obtained in Example 3 of the present disclosure; and FIG. 3b is a TEM photograph of the HCNT-CNT heterojunction obtained in Example 3 of the present disclosure.
DETAILED DESCRIPTION OF THE EMBODIMENTS The specific technical solutions of the present disclosure are illustrated in conjunction with examples.
Example 1: (1) 0.01 mol nickel nitrate hexahydrate and 0.03 mol citric acid monohydrate were weighed and placed in an Erlenmeyer flask containing 100 ml of absolute ethanol. Heating was conducted to 60°C in a water bath and stirring was conducted electrically for 6 hours, and then a mixture was transferred to a beaker, dried at 85°C, and then completely dried at 175°C. Finally, the mixture was calcined in a muffle furnace at 400°C for 4 hours to obtain nickel oxide nanoparticles.
(2) 0.025 g of a product in step (1) was weighed and placed into a reactor of a CVD system (a horizontal tube furnace with a tube diameter of 50 mm) in a porcelain boat. Hydrogen was input at a flow rate of 20 ml/min, and heating was conducted to a tempera- ture of 400°C and the temperature was held for 1 hour.
(3) The hydrogen input was stopped, acetylene and ammonia were input (at flow rates of 30 ml/min and 5 ml/min respectively), and heating was conducted to a temperature of 425°Cand the tempera- ture was held for 4 hours. Finally, the acetylene and ammonia in- put was stopped, argon was input, and a product was cooled to a room temperature to obtain the HCNT-CNT heterojunction about 1.52 dg.
A FE-SEM photograph and a TEM photograph of the product ob- tained in the above example are shown in FIG. la and FIG. lb.
Example 2: A furnace in step (3) of Example 1 was heated to 450°C, and other conditions were completely the same as those of Example 1 to obtain a HCNT-CNT heterojunction about 1.21 g.
5 A FE-SEM photograph and a TEM photograph of the product ob- tained in the above example are shown in FIG. 2a and FIG. 2b.
Example 3: A furnace in step (3) of Example 1 was heated to 475°C, and other conditions were completely the same as those of Example 1 to obtain a HCNT-CNT heterojunction about 1.89 g.
A FE-SEM photograph and a TEM photograph of the product ob- tained in the above example are shown in FIG. 3a and FIG. 3b.
Although the technical sclutions and examples of the present disclosure are described above, they are not intended to limit the present disclosure. Those with ordinary knowledge in the technical field to which the present disclosure belongs can make various changes, alterations, and modifications without departing from the spirit and scope of the present disclosure. The protection scope of the present disclosure is defined by the appended claims.
Claims (7)
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| CN202110058110.3A CN112624089B (en) | 2021-01-16 | 2021-01-16 | Method for synthesizing spiral carbon nano tube-carbon nano tube heterojunction |
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| CN104528686A (en) * | 2014-12-28 | 2015-04-22 | 桂林理工大学 | Method for preparing fluorine-doped helical carbon nanotube |
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| CN1948143A (en) * | 2006-11-13 | 2007-04-18 | 南京大学 | Method of symmetrically growing spiral carbon tube |
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| MX338468B (en) * | 2011-07-14 | 2016-04-13 | Ct De Investigación Y De Estudios Avanzados Del I P N | Method for the preparation of carbon nanotubes doped with different elements. |
| CN102745665B (en) * | 2012-01-06 | 2017-08-25 | 中国科学院成都有机化学有限公司 | A kind of method for preparing helical structure CNT |
| CN103723703B (en) * | 2014-01-06 | 2015-07-15 | 四川理工学院 | Method for preparing helical carbon nanotube at low temperature |
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|---|---|---|---|---|
| CN104528686A (en) * | 2014-12-28 | 2015-04-22 | 桂林理工大学 | Method for preparing fluorine-doped helical carbon nanotube |
| CN108711519A (en) * | 2018-05-17 | 2018-10-26 | 桂林理工大学 | A kind of graphene oxide coats the preparation method of spiral carbon tube three-dimensional composite material and photoreduction N doping |
Non-Patent Citations (2)
| Title |
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| OUYANG ET AL., SCIENCE, vol. 291, 2001, pages 97 - 100 |
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