NL2018528A - Multiphase linear motor, multiphase planar motor, lithographic apparatus and device manufacturing method - Google Patents

Multiphase linear motor, multiphase planar motor, lithographic apparatus and device manufacturing method Download PDF

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Publication number
NL2018528A
NL2018528A NL2018528A NL2018528A NL2018528A NL 2018528 A NL2018528 A NL 2018528A NL 2018528 A NL2018528 A NL 2018528A NL 2018528 A NL2018528 A NL 2018528A NL 2018528 A NL2018528 A NL 2018528A
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Netherlands
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coil
substrate
magnet
motor
driving direction
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NL2018528A
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Dutch (nl)
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Michel Silvester Maria Heijmans Peter
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Asml Netherlands Bv
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Abstract

The invention relates to a multiphase motor comprising: - a coil system; - a magnet system moveable in a first main driving direction; wherein the coil system is configured to generate magnetic fields interacting with the magnet system to cause driving forces to move the magnet system, wherein the coil system comprises a plurality of coil assemblies, wherein each coil assembly has a first dimension in the first main driving direction, and wherein a non-zero first gap is present between adjacent coil assemblies, wherein the magnet system comprises a magnet assembly with an array of magnets, wherein adjacent magnets in the magnet assembly have opposite polarity, and wherein the magnet assembly has a first dimension in the first main driving direction substantially equal to J times the first dimension of each coil assembly plus J/2 times the first gap with J being a positive integer.

Description

MULTIPHASE LINEAR MOTOR, MULTIPHASE PLANAR MOTOR, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHODMULTIPHASE LINEAR ENGINE, MULTIPHASE PLANAR ENGINE, LITHOGRAPHIC EQUIPMENT AND DEVICE MANUFACTURING METHOD

BACKGROUNDBACKGROUND

Field of the InventionField of the Invention

The present invention relates to a multiphase linear motor, a multiphase planar motor, a lithographic apparatus comprising such a multiphase linear or planar motor, and a device manufacturing method wherein use is made of such a multiphase linear or planar motor.The present invention relates to a multi-phase linear motor, a multi-phase planar motor, a lithographic apparatus including such a multi-phase linear or planar motor, and a device manufacturing method using is made or such a multi-phase linear or planar motor.

Description of the Related Art A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In such a case, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g. including part of, one, or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Conventional lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at once, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.Description of the Related Art A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In such a case, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g., including part of, one, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Conventional lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at once, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the “scanning” direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.

In order to move objects in the lithographic apparatus, e.g. substrate tables configured to support a substrate, use is made of motors. In prior art lithographic apparatus, multiphase, e.g. three-phase, linear or planar motors are commonly used with a moving-magnet configuration. The coils are then connected to the fixed world and the magnets are moveable relative to the coils.In order to move objects in the lithographic apparatus, e.g., substrate tables configured to support a substrate, use is made of motors. Prior art lithographic apparatus, multiphase, e.g. three-phase, linear or planar motors are commonly used with a moving-magnet configuration. The coils are then connected to the fixed world and the magnets are moveable relative to the coils.

The aim for such motors is that for a given current through the coils, the generated force is constant and thus independent of the position of the magnets relative to the coils. However, in practice, a constant force or motor constant is not feasible and a ripple remains. This ripple may be caused by voltage design rules, mechanical design rules, manufacturability and/or serviceability. It has been found that for motors capable of generating high accelerations of up to 400 m/s2, in which the required forces are relatively large, this may result in a ripple of up to 8%, which is undesirable.The aim for such motorcycles is that for a given current through the coils, the generated force is constant and thus independent of the position of the magnets relative to the coils. However, in practice, a constant force or motor constant is not feasible and a ripple remains. This ripple may be caused by voltage design rules, mechanical design rules, manufacturability and / or serviceability. It has been found for motors capable of generating high accelerations or up to 400 m / s2, in which the required forces are relatively large, this may result in a ripple or up to 8%, which is undesirable.

SUMMARYSUMMARY

It is desirable to provide a multiphase motor having a reduced ripple in the motor constant as a function of position of the magnets relative to the coils.It is desirable to provide a multiphase motor having a reduced ripple in the motor constant as a function or position of the magnets relative to the coils.

According to an embodiment of the invention, there is provided a multiphase motor comprising: - a coil system; - a magnet system moveable parallel and relative to the coil system in a first main driving direction; wherein the coil system is configured to generate magnetic fields interacting with the magnet system to cause driving forces in the first main driving direction to move the magnet system relative to the coil system, wherein the coil system comprises a plurality of coil assemblies, wherein each coil assembly has a first dimension in the first main driving direction, and wherein a non-zero first gap is present between adjacent coil assemblies seen in the first main driving direction, w herein the magnet system comprises a magnet assembly with an array of magnets, wherein adjacent magnets in the magnet assembly have opposite polarity, and wherein the magnet assembly has a first dimension in the first main driving direction substantially equal to J times the first dimension of each coil assembly plus J/2 times the first gap with J being a positive integer.According to an embodiment of the invention, there is provided a multiphase motor including: - a coil system; - a magnet system moveable in parallel and relative to the coil system in a first main driving direction; in which the coil system is configured to generate magnetic fields interacting with the magnet system to cause driving forces in the first main driving direction to move the magnet system relative to the coil system, being the coil system comprises a multiple of coil assemblies, are each coil assembly has a first dimension in the first main driving direction, and in which a non-zero first gap is present between adjacent coil assemblies seen in the first main driving direction, w here the magnet system comprises a magnet assembly with an array of magnets, adjacent magnets in the magnet assembly have opposite polarity, and the magnet assembly has a first dimension in the first main driving direction substantially equal to J times the first dimension of each coil assembly plus J / 2 times the first gap with J being a positive integer.

According to another embodiment of the invention, there is provided a lithographic apparatus comprising a multiphase motor according to the invention.According to another embodiment of the invention, there is provided a lithographic apparatus including a multiphase engine according to the invention.

According to a further embodiment of the invention, there is provided a device manufacturing method wherein use is made of a multiphase motor according to the invention. BRTEF DESCRIPTION OF THE DRAWINGS Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:According to a further embodiment of the invention, there is provided a device manufacturing method where use is made of a multiphase engine according to the invention. BRTEF DESCRIPTION OF THE DRAWINGS Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:

Figure 1 depicts a lithographic apparatus according to an embodiment of the invention; Figure 2 depicts a multiphase linear motor according to an embodiment of the invention; Figure 3 depicts a graph indicating a motor constant as a function of position for a multiphase linear motor similar to the motor of Fig. 2, but with a prior art configuration; and Figure 4 depicts a graph indicating a motor constant as a function of position for the multiphase linear motor of Fig. 2,Figure 1 depicts a lithographic apparatus according to an embodiment of the invention; Figure 2 depicts a multiphase linear motor according to an embodiment of the invention; Figure 3 depicts a graph indicating a motor constant as a function or position for a multiphase linear motor similar to the motor or FIG. 2, but with a prior art configuration; and Figure 4 depict a graph indicating a motor constant as a function or position for the multiphase linear motor or FIG. 2

DETAILED DESCRIPTIONDETAILED DESCRIPTION

Figure 1 schematically depicts a lithographic apparatus according to one embodiment of the invention. The apparatus comprises: an illumination system (illuminator) 1L configured to condition a radiation beam B (e.g. UV radiation or EUV radiation). a support structure (e.g. a mask table) MT constructed to support a patterning device (e.g. a mask) MA and connected to a first positioner PM configured to accurately position the patterning device in accordance with certain parameters; a substrate table (e.g. a wafer table) WTa or WTb constructed to hold a substrate (e.g. a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate in accordance with certain parameters; and a projection system (e.g. a refractive projection lens system) PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (e.g. comprising one or more dies) of the substrate W.Figure 1 schematically depicts a lithographic apparatus according to one embodiment of the invention. The apparatus comprises: an illumination system (illuminator) 1L configured to condition a radiation beam B (e.g., UV radiation or EUV radiation). a support structure (e.g., a mask table) MT constructed to support a patterning device (e.g., a mask) MA and connected to a first positioner PM configured to accurately position the patterning device in accordance with certain parameters; a substrate table (e.g., a wafer table) WTa or WTb constructed to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate in accordance with certain parameters; and a projection system (e.g. a refractive projection lens system) PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (e.g. including one or more dies) of the substrate W.

The illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, and/or controlling radiation.The illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination of, for directing, shaping, and / or controlling radiation.

The support structure supports MT, i.e. bears the weight of, the patterning device MA. It holds the patterning device MA in a manner that depends on the orientation of the patterning device MA, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device MA is held in a vacuum environment. The support structure MT can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device MA. The support structure MT may be a frame or a table, for example, which may be fixed or movable as required. The support structure MT may ensure that the patterning device MA is at a desired position, for example with respect to the projection system PS. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”The support structure supports MT, i.e. bears the weight of, the patterning device MA. It holds the patterning device MA in a manner that depends on the orientation of the patterning device MA, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device MA is a hero in a vacuum environment. The support structure MT can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device MA. The support structure MT may be a frame or a table, for example, which may be fixed or movable as required. The support structure MT may ensure that the patterning device is at a desired position, for example with respect to the projection system PS. Any use of the terms "reticle" or "mask" may be considered synonymous with the more general term "patterning device."

The term “patterning device” used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate W. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate W, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.The term “patterning device” used should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate W. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate W, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.

The patterning device MA may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.The patterning device MA may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase shift, and attenuated phase shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.

The term “projection system” used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.The term "projection system" used should be broadly interpreted and compassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination of these, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term "projection lens" may be considered as synonymous with the more general term "projection system".

As here depicted, the apparatus is of a transmissive type (e.g. employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above, or employing a reflective mask).As here depicted, the apparatus is of a transmissive type (e.g., employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g., employing a programmable mirror array or a type referred to above, or employing a reflective mask).

The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure. The two substrate tables WTa and WTb in the example of Figure 1 are an illustration of this. The invention disclosed herein can be used in a stand-alone fashion, but in particular it can provide additional functions in the pre-exposure measurement stage of either single- or multi-stage apparatuses.The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and / or two or more mask tables). In such multiple stage machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure. The two substrate tables WTa and WTb in the example of Figure 1 are an illustration of this. The invention disclosed can be used in a stand-alone fashion, but in particular it can provide additional functions in the pre-exposure measurement stage or either single- or multi-stage apparatuses.

The lithographic apparatus may also be of a type wherein at least a portion of the substrate W may be covered by a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the projection system PS and the substrate W. An immersion liquid may also be applied to other spaces in the lithographic apparatus, for example, between the patterning device MA and the projection system PS. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. The term “immersion” as used herein does not mean that a structure, such as a substrate W, must be submerged in liquid, but rather only means that liquid is located between the projection system PS and the substrate W during exposure.The lithographic apparatus may also be a type of at least a portion of the substrate W may be covered by a liquid having a relatively high refractive index, eg water, so as to fill a space between the projection system PS and the substrate W. An immersion liquid may also be applied to other spaces in the lithographic apparatus, for example, between the patterning device MA and the projection system PS. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. The term “immersion” as used does not mean that a structure, such as a substrate W, must be submerged in liquid, but rather only means that liquid is located between the projection system PS and the substrate W during exposure.

Referring to Figure 1, the illuminator IL receives a radiation beam from a radiation source SO. The radiation source SO and the lithographic apparatus may be separate entities, for example when the radiation source SO is an excimer laser. In such cases, the radiation source SO is not considered to form part of the lithographic apparatus and the radiation beam is passed from the radiation source SO to the illuminator IL with the aid of a beam delivery system BD comprising, for example, suitable directing mirrors and/or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp. The radiation source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.Referring to Figure 1, the illuminator IL receives a radiation beam from a radiation source SO. The radiation source SO and the lithographic apparatus may be separate entities, for example when the radiation source SO is an excimer laser. In such cases, the radiation source SO is not considered to be part of the lithographic apparatus and the radiation beam is passed from the radiation source SO to the illuminator IL with the aid of a beam delivery system BD including, for example, suitable directing mirrors and / or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp. The radiation source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.

The illuminator IL may comprise an adjuster AD for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL may comprise various other components, such as an integrator IN and a condenser CO. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.The illuminator IL may include an adjuster AD for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and / or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) or the intensity distribution in a pupil plane or the illuminator can be adjusted. In addition, the illuminator IL may include various other components, such as an integrator IN and a condenser CO. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.

The radiation beam B is incident on the patterning device MA (e.g., mask), which is held on the support structure MT (e.g., mask table), and is patterned by the patterning device MA. Having traversed the patterning device MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioner PW and position sensor IF (e.g. an interferometric device, linear encoder or capacitive sensor), the substrate table WTa/WTb can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor (which is not explicitly depicted in Figure 1) can be used to accurately position the patterning device MA with respect to the path of the radiation beam B, e.g. after mechanical retrieval from a mask library, or during a scan. In general, movement of the support structure MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM. Similarly, movement of the substrate table WTa/WTb may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the support structure MT may be connected to a short-stroke actuator only, or may be fixed. Patterning device MA and substrate W may be aligned using mask alignment marks Ml, M2 and substrate alignment marks PI, P2. Although the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks). Similarly, in situations in which more than one die is provided on the patterning device MA, the mask alignment marks Ml, M2 may be located between the dies.The radiation beam B is incident on the patterning device MA (e.g., mask), which is hero on the support structure MT (e.g., mask table), and is patterned by the patterning device MA. Having traversed the patterning device MA, the radiation beam B passes through the projection system PS, which selects the beam onto a target portion C or the substrate W. With the aid of the second positioner PW and position sensor IF (eg an interferometric device, linear encoder or capacitive sensor), the substrate table WTa / WTb can be moved accurately, eg so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor (which is not explicitly depicted in Figure 1) can be used to accurately position the patterning device MA with respect to the path of the radiation beam B, eg after mechanical retrieval from a mask library, or during a scan. In general, movement of the support structure MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM. Similarly, movement of the substrate table WTa / WTb may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the support structure MT may be connected to a short-stroke actuator only, or may be fixed. Patterning device MA and substrate May be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks). Similarly, in situations in which more than one that is provided on the patterning device MA, the mask alignment marks M1, M2 may be located between the dies.

The depicted apparatus can at least be used in scan mode, in which the support stincture MT and the substrate table WTa/WTb are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WTa/WTb relative to the support structure MT may be determined by the (de)-magnification and image reversal characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.The depicted apparatus can at least be used in scan mode, in which the support stincture MT and the substrate table WTa / WTb are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (ie a single dynamic exposure) . The velocity and direction of the substrate table WTa / WTb relative to the support structure MT may be determined by the (de) -magnification and image reversal characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) or the target portion in a single dynamic exposure, whereas the length of the scanning motion has the height (in the scanning direction) of the target portion.

In addition to the scan mode, the depicted apparatus could be used in at least one of the following modes: 1. In step mode, the mask table MT and the substrate table WTa/WTb are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (i.e. a single static exposure). The substrate table WTa/WTb is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure. 2. In another mode, the support structure MT is kept essentially stationary holding a programmable patterning device, and the substrate table WTa/WTb is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WTa/WTb or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.In addition to the scan mode, the depicted apparatus could be used in at least one of the following modes: 1. In step mode, the mask table MT and the substrate table WTa / WTb are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (ie a single static exposure). The substrate table WTa / WTb is then shifted in the X and / or Y direction so that a different target portion can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure. 2. In another mode, the support structure MT is kept essentially stationary holding a programmable patterning device, and the substrate table WTa / WTb is moved or scanned while a pattern is imparted to the radiation beam is projected onto a target portion C. In this mode , generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WTa / WTb or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array or a type as referred to above.

Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.Combinations and / or variations on the modes described above or use or entirely different modes or use may also be employed.

Lithographic apparatus LA is of a so-called dual stage type which has two substrate tables WTa and WTb and two stations - an exposure station and a measurement station- between which the substrate tables can be exchanged. While one substrate on one substrate table is being exposed at the exposure station, another substrate can be loaded onto the other substrate table at the measurement station so that various preparatory steps may be earned out. The preparatory steps may include mapping the surface of the substrate using a level sensor LS and measuring the position of alignment markers on the substrate using an alignment sensor AS. This enables a substantial increase in the throughput of the apparatus. If the position sensor IF is not capable of measuring the position of the substrate table while it is at the measurement station as well as at the exposure station, a second position sensor may be provided to enable the positions of the substrate table to be tracked at both stations.Lithographic apparatus LA is a so-called dual stage type which has two substrate tables WTa and WTb and two stations - an exposure station and a measurement station - between which the substrate tables can be exchanged. While one substrate on one substrate table is being exposed at the exposure station, another substrate can be loaded onto the other substrate table at the measurement station so that various preparatory steps may be earned out. The preparatory steps may include mapping the surface of the substrate using a level sensor LS and measuring the position of alignment markers on the substrate using an alignment sensor AS. This allows a substantial increase in the throughput of the apparatus. If the position sensor IF is not capable of measuring the position of the substrate table while it is at the measurement station as well as at the exposure station, a second position sensor may be provided to enable the positions of the substrate table to be tracked at both stations.

The apparatus further includes a lithographic apparatus control unit LACU which controls all the movements and measurements of the various actuators and sensors described. Control unit LACU also includes signal processing and data processing capacity to implement desired calculations relevant to the operation of the apparatus. In practice, control unit LACU will be realized as a system of many sub-units, each handling the real-time data acquisition, processing and control of a subsystem or component within the apparatus. For example, one processing subsystem may be dedicated to servo control of the substrate positioner PW. Separate units may even handle coarse and fine actuators, or different axes. Another unit might be dedicated to the readout of the position sensor IF. Overall control of the apparatus may be controlled by a central processing unit, communicating with these sub-systems processing units, with operators and with other apparatuses involved in the lithographic manufacturing process.The apparatus further includes a LACU lithographic apparatus control unit which controls all the movements and measurements of the various actuators and sensors described. Control unit LACU also includes signal processing and data processing capacity to implement desired calculations relevant to the operation of the apparatus. In practice, LACU control unit will be realized as a system of many sub-units, each handling the real-time data acquisition, processing and control or a subsystem or component within the apparatus. For example, one processing subsystem may be dedicated to servo control or the substrate positioner PW. Separate units may even handle coarse and fine actuators, or different axes. Another unit might be dedicated to the readout or the position sensor IF. Overall control of the apparatus may be controlled by a central processing unit, communicating with these sub-systems processing units, with operators and with other apparatuses involved in the lithographic manufacturing process.

Fig. 2 depicts a three-phase linear motor 1 according to an embodiment of the invention. In this embodiment, the three-phase linear motor is part of the long-stroke module of the first positioner PM. but it will be apparent that such motors can additionally or alternatively be used in other parts of the lithographic apparatus to move and position objects, e.g. the substrate table constructed to hold a substrate.FIG. 2 depicts a three-phase linear motor 1 according to an embodiment of the invention. In this embodiment, the three-phase linear motor is part of the long-stroke module or the first positioner PM. but it will be apparent that such motors can additionally or alternatively be used in other parts of the lithographic apparatus to move and position objects, e.g., the substrate table constructed to hold a substrate.

The motor 1 comprises a first coil system 10 and a second coil system 20 arranged opposite to the first coil system 10. When “the coil systems” is used throughout the description, reference is made to both the first coil system 10 and the second coil system 20. A magnet system 30 is arranged in between the coil systems 10,20. The magnet system is moveable parallel and relative to the coil systems 10, 20 in a first main driving direction parallel to the X-direction. The motor 1 generates driving forces in the first main driving direction by generating magnetic fields in the coil systems 10,20 that interact with the magnet system. By asymmetrically applying currents to the coil systems 10, 20, the magnet system may also generate forces in a non-driving direction parallel to the Z-direction, which can be used to prevent the magnet system from colliding with one of the coil systems 10, 20 and/or to levitate an object attached to the magnet system.The motor 1 comprises a first coil system 10 and a second coil system 20 arranged opposite to the first coil system 10. When “the coil systems” is used throughout the description, reference is made to both the first coil system 10 and the second coil system 20. A magnet system 30 is arranged in between the coil systems 10.20. The magnet system is moveable parallel and relative to the coil systems 10, 20 in a first main driving direction parallel to the X-direction. The motor 1 generates driving forces in the first main driving direction by generating magnetic fields in the coil systems 10.20 that interact with the magnet system. By asymmetrically applying currents to the coil systems 10, 20, the magnet system may also generate forces in a non-driving direction parallel to the Z-direction, which can be used to prevent the magnet system from colliding with one of the coil systems 10 , 20 and / or to levitate an object attached to the magnet system.

The coil systems 10, 20 comprise a plurality of coil assemblies 11, 12, 13, 21, 22, 23. The coil assemblies 11, 12,13 correspond to the first coil system 10 and the coil assemblies 21,22, 23 correspond to the second coil system 20. Each coil assembly has a dimension L in the first main driving direction, i.e. the X direction, and adjacent coil assemblies have a non zero first gap G in between seen in the first main driving direction.The coil systems 10, 20 include a variety of coil assemblies 11, 12, 13, 21, 22, 23. The coil assemblies 11, 12.13 correspond to the first coil system 10 and the coil assemblies 21.22, 23 correspond to the second coil system 20. Each coil assembly has a dimension L in the first main driving direction, ie the X direction, and adjacent coil assemblies have a non-zero first gap G in between seen in the first main driving direction.

Each coil assembly 11, 12, 13, 21, 22, 23 comprises in this embodiment two three-phase coils TC, each three-phase coil providing three phases 14,15, 16 as indicated for the upper three-phase coil TC of coil assembly 11 only.Each coil assembly 11, 12, 13, 21, 22, 23 comprises in this embodiment two three-phase coils TC, each three-phase coil providing three phases 14,15, 16 as indicated for the upper three-phase coil TC or coil assembly 11 only.

The coil systems 10,20 further comprise back iron 18, 28, respectively, which back iron fulfils the function of containing the magnetic fields generated in die coil system and thus to minimize the leakage of magnetic flux, and to function as support element for the coil assemblies.The coil systems 10.20 further include back iron 18, 28, respectively, which back iron fulfills the function of containing the magnetic fields generated in that coil system and thus to minimize the leakage of magnetic flux, and to function as a support element for the coil assemblies.

The magnet system 30 comprises in this embodiment a magnet assembly 31 with an array of magnets, wherein adjacent magnets in the magnet assembly have opposite polarity perpendicular to the coil assemblies, i.e. parallel to the non-driving direction (Z-direction). The magnets may be formed by one or more sub-magnets all having the same polarity. In this embodiment, the magnets have a dimension such that four magnets face a three-phase coil TC. Alternatively, intermediate magnets may be positioned between the magnets having an opposite polarity, the intermediate magnets e.g. having a polarity parallel to the driving direction, so as to form a Hallbach magnet array.The magnet system 30 comprises in this embodiment a magnet assembly 31 with an array of magnets, adjacent adjacent magnets in the magnet assembly have opposite polarity perpendicular to the coil assemblies, i.e. parallel to the non-driving direction (Z-direction). The magnets may be formed by one or more sub-magnets all having the same polarity. In this embodiment, the magnets have a dimension such that four magnets face a three-phase coil TC. Alternatively, intermediate magnets may be positioned between the magnets having opposite polarity, the intermediate magnets eg having a polarity parallel to the driving direction, so as to form a Hallbach magnet array.

Further, in this embodiment, a first row 32 of sub-magnets facing the first coil system 10 and a second row of sub-magnets facing the second coil system 20 together form the magnets interacting with both the first and second coil systems, but any other configuration can also be envisaged.Further, in this embodiment, a first row 32 or sub-magnet facing the first coil system 10 and a second row or sub-magnet facing the second coil system 20 together form the magnets interacting with both the first and second coil systems, but any other configuration can also be envisaged.

Preferably, the gap G between adjacent coil assemblies is zero or close to zero meaning that it is close to a distance between coils in a coil assembly as a non-zero gap G disturbs the periodicity of the position of the three-phase coils TC with respect to the magnets. This causes a non-constant generated force as function of position. An example thereof is shown in Fig. 3, depicting a graph MC for a motor constant Km in Newton/Amperes for the first main driving direction as function of position of the magnet system in the first main driving direction when the magnet system has a first dimension in the first main driving direction equal to J times the first dimension L of each col assembly, with J being a positive integer as used in the prior art. The ripple can easily be ±8%. A non-zero gap G may be caused by the fact that due to manufacturability and serviceability coil assemblies can only comprise a limited number of three-phase coils TC, in this embodiment two coils TC. When the coil assemblies are mounted together to form a coil system, high voltage design rules, e.g. for creepage and clearance, and mechanical design rules may determine that a non-zero gap G needs to be present between adjacent coil assemblies, thereby introducing the ripple.Preferably, the gap G between adjacent coil assemblies is zero or close to zero meaning that it is close to a distance between coils in a coil assembly as a non-zero gap G disturbs the periodicity of the position of the three-phase coils TC with respect to the magnets. This causes a non-constantly generated force as function or position. An example thereof is shown in FIG. 3, depicting a graph MC for a motor constant Km in Newton / Amperes for the first main driving direction as function or position of the magnet system in the first main driving direction when the magnet system has a first dimension in the first main driving direction equal to J times the first dimension L or each col assembly, with J being a positive integer as used in the prior art. The ripple can easily be ± 8%. A non-zero gap May be caused by the fact that due to manufacturability and serviceability coil assemblies can only include a limited number of three-phase coils TC, in this version two coils TC. When the coil assemblies are mounted together to form a coil system, high voltage design rules, eg for creation and clearance, and mechanical design rules may determine that a non-zero gap G needs to be present between adjacent coil assemblies, introduce introducing the ripple .

Compared to the prior art configuration, the invention is able to reduce the introduced ripple by extending the magnet assembly. In the embodiment of Fig. 2, the magnet assembly 31 has been given a first dimension in the first main driving direction substantially equal to J times the first dimension L of each coil assembly plus J/2 times the first gap G with J being a positive integer.Compared to the prior art configuration, the invention is able to reduce the introduced ripple by extending the magnet assembly. In the embodiment of FIG. 2, the magnet assembly 31 has been given a first dimension in the first main driving direction substantially equal to J times the first dimension L or each coil assembly plus J / 2 times the first gap G with J being a positive integer.

The extension in this embodiment may be a single magnet that compensates the ripple at least partially. However, depending on the size of the magnets and the size of the gap G, the extension may also be formed by two or more magnets.The extension in this embodiment may be a single magnet that compensates the ripple at least partially. However, depending on the size of the magnets and the size of the gap G, the extension may also be formed by two or more magnets.

An example of the effect of the extension is shown in Fig. 4 which depicts a graph MC2 for a motor constant Km2 in Newton/Amperes for the first main driving direction as function of position of the magnet system 30 in the main driving direction. The scale of the graph is identical to the scale of the graph of Fig. 3, so that it is clear that the extension of the magnet system results in a significant reduction of the ripple of the motor constant. The ripple can easily be reduced to below ±0.5%.An example of the effect of the extension is shown in FIG. 4 which depicts a graph MC2 for a motor constant Km2 in Newton / Amperes for the first main driving direction as a function or position of the magnet system 30 in the main driving direction. The scale of the graph is identical to the scale of the graph of Figs. 3, so that it is clear that the extension of the magnet system results in a significant reduction of the ripple of the motor constant. The ripple can easily be reduced to below ± 0.5%.

Although the embodiment of Fig. 2 depicts a coil system having three coil assemblies, it will be clear that the coil system can have any number of coil assemblies.Although the embodiment of Figs. 2 depicts a coil system having three coil assemblies, it will be clear that the coil system can have any number of coil assemblies.

Although the embodiment of Fig. 2 depicts the motor having a first and second coil system with the magnet system in between, a motor comprising only one of the two coil systems with the magnet system arranged parallel next to the coil system also falls within the scope of the invention.Although the embodiment of Figs. 2 depicts the motor having a first and second coil system with the magnet system in between, a motor including only one of the two coil systems with the magnet system arranged in parallel next to the coil system also falls within the scope of the invention.

Although the described embodiment is a three-phase system, the invention can be applied to any multiphase linear motor, including but not limited to a two-phase motor and four-phase motor.Although the described embodiment is a three-phase system, the invention can be applied to any multi-phase linear motor, including but not limited to a two-phase motor and four-phase motor.

Although the invention has been described as solving/reducing the problem of ripple of the motor constant in the main driving direction as function of the position in the driving direction, the invention can alternatively or additionally be applied to solve/reduce the problem of ripple of the motor constant in the non-chiving direction as function of the position in the driving direction.Although the invention has been described as solving / reducing the problem of ripple or the motor constantly in the main driving direction as a function of the position in the driving direction, the invention can alternatively or additionally be applied to solve / reduce the problem of ripple or the motor constantly in the non-chiving direction as a function or the position in the driving direction.

Although the motor described in Fig. 2 may suggest that the invention can only be applied to a linear motor, the invention can also be applied to a planar motor in which the coil system and the magnet system also extend in a second main driving direction perpendicular to both the X-and Z- direction and which may alternatively be referred to as the Y-direction.Although the motor described in Figs. 2 may suggest that the invention can only be applied to a linear motor, the invention can also be applied to a planar motor in which the coil system and the magnet system also extend in a second main driving direction perpendicular to both the X-and Z - direction and which may alternatively be referred to as the Y-direction.

The coil assembly will have a second dimension in the second main driving direction, wherein a non-zero second gap is present between adjacent coil assemblies in the second main driving direction, and wherein the magnet assembly has a second dimension in the second main driving direction substantially equal to K times the second dimension of each coil assembly plus K/2 times the second gap with K being a positive integer, which is similar for the dimensions in the first main driving direction.The coil assembly will have a second dimension in the second main driving direction, if a non-zero second gap is present between adjacent coil assemblies in the second main driving direction, and the magnet assembly has a second dimension in the second main driving direction substantially equal to K times the second dimension of each coil assembly plus K / 2 times the second gap with K being a positive integer, which is similar for the dimensions in the first main driving direction.

It is noted that the term “consecutive” or “consecutively” in this context means that no other exposures or irradiation of target portions takes place in between the respective steps. However, it does not exclude other operations to be performed in between the respective steps, such as measurement steps, calibration steps, positioning steps, etc.It is noted that the term "consecutive" or "consecutive" in this context means that no other exposures or irradiation or target portions takes place in between the respective steps. However, it does not exclude other operations performed in between the respective steps, such as measurement steps, calibration steps, positioning steps, etc.

Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “ that "may be considered as synonymous with the more general terms" substrate "or" target portion ", respectively. The substrate referred to may be processed, before or after exposure, in for example a track (a tool that typically applies to a layer of resist to a substrate and develops the exposed resist), a metrology tool and / or an inspection tool. Where applicable, the disclosure may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so the term substrate used may also refer to a substrate that already contains multiple processed layers.

Although specific reference may have been made above to the use of embodiments of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications, for example imprint lithography, and where the context allows, is not limited to optical lithography. In imprint lithography a topography in a patterning device defines the pattern created on a substrate. The topography of the patterning device may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof. The patterning device is moved out of the resist leaving a pattern in it after the resist is cured.Although specific reference may have been made above to the use of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications, for example imprint lithography, and where the context allows, is not limited to optical lithography. In imprint lithography a topography in a patterning device the pattern created on a substrate. The topography of the patterning device may be pressed into a layer or resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof. The patterning device is moved out of the resist leaving a pattern in it after the resist is cured.

The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of or about 365, 248, 193,157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g. having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.The terms “radiation” and “beam” are used for all types of electromagnetic radiation, including ultraviolet (UV) radiation (eg having a wavelength of or about 365, 248, 193,157 or 126 nm) and extreme ultra-violet (EUV) radiation (eg having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.

The term “lens”, where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.The term “lens”, where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.

While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. For example, the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (e.g. semiconductor memory, magnetic or optical disk) having such a computer program stored therein.While specific expired or the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. For example, the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (eg semiconductor memory, magnetic or optical disk) having such a computer program stored therein.

The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the clauses set out below. Other aspects of the invention are set out as in the following numbered clauses: 1. A multiphase motor comprising: - a coil system; - a magnet system moveable parallel and relative to the coil system in a first main driving direction: wherein the coil system is configured to generate magnetic fields interacting with the magnet system to cause driving forces in the first main driving direction to move the magnet system relative to the coil system, wherein the coil system comprises a plurality of coil assemblies, wherein each coil assembly has a first dimension in the first main driving direction, and wherein a non-zero first gap is present between adjacent coil assemblies seen in the first main driving direction, wherein the magnet system comprises a magnet assembly with an array of magnets, wherein adjacent magnets in the magnet assembly have opposite polarity, and wherein the magnet assembly has a first dimension in the first main driving direction substantially equal to J times the first dimension of each coil assembly plus J/2 times the first gap with J being a positive integer. 2. The motor according to clause 1, further comprising a further coil system arranged opposite to the coil system with the magnet system arranged in between the coil system and the further coil system in a symmetric configuration. 3. The motor according to clause 1, wherein the motor is a three-phase motor. 4. The motor according to clause 1, wherein each coil assembly comprises at least one multiphase coil. 5. The motor according to clause 3, wherein each coil assembly comprises one or more three-phase coils. 6. The motor according to clause 1, wherein the motor is a linear motor. 7. The motor according to clause l, wherein the magnet system is moveable parallel and relative to the coil system in a second main driving direction perpendicular to the first main driving direction, wherein each coil assembly has a second dimension in the second main driving direction, wherein a non-zero second gap is present between adjacent coil assemblies in the second main driving direction, and wherein the magnet assembly has a second dimension in the second main driving direction substantially equal to K times the second dimension of each coil assembly plus K/2 times the second gap with K being a positive integer. 8. A lithographic apparatus comprising a multiphase motor according to clause 1. 9. The lithographic apparatus according to clause 8, further comprising: - an illumination system configured to condition a radiation beam; - a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; - a substrate table constructed to hold a substrate with a multiple target portions arranged in one or more columns parallel to an axis; - a projection system configured to project the patterned radiation beam onto a target portion of the substrate; and - a positioner to position the substrate table or the support, wherein said positioner comprises the motor according to clause 1. 10. The lithographic apparatus according to clause 8, wherein the positioner comprises a long-stroke module for coarse positioning and a short-stroke module for fine positioning, and wherein the long-stroke module comprises the motor according to clause 1. 11. A device manufacturing method wherein use is made of a multiphase motor according to clause 1.The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope or the clauses set out below. Other aspects of the invention are set out as in the following numbered clauses: 1. A multiphase motor comprising: - a coil system; - a magnet system moveable parallel and relative to the coil system in a first main driving direction: the coil system is configured to generate magnetic fields interacting with the magnet system to cause driving forces in the first main driving direction to move the magnet system relative the coil system, the coil system comprises a variety of coil assemblies, each coil assembly has a first dimension in the first main driving direction, and a non-zero first gap is present between adjacent coil assemblies seen in the first main driving direction, featuring the magnet system comprises a magnet assembly with an array of magnets, adjacent magnets in the magnet assembly have opposite polarity, and bearing the magnet assembly has a first dimension in the first main driving direction substantially equal to J times the first dimension of each coil assembly plus J / 2 times the first gap with J being a positive integer. 2. The motor according to clause 1, further including a further coil system arranged opposite to the coil system with the magnet system arranged in between the coil system and the further coil system in a symmetric configuration. 3. The motor according to clause 1, where the motor is a three-phase motor. 4. The motor according to clause 1, each coil assembly comprises at least one multiphase coil. 5. The motor according to clause 3, each coil assembly comprises one or more three-phase coils. 6. The motor according to clause 1, where the motor is a linear motor. 7. The motor according to clause l, the magnet system is moveable parallel and relative to the coil system in a second main driving direction, each coil assembly has a second dimension in the second main driving direction , a non-zero second gap is present between adjacent coil assemblies in the second main driving direction, and in the magnet assembly has a second dimension in the second main driving direction substantially equal to K times the second dimension of each coil assembly plus K / 2 times the second gap with K being a positive integer. 8. A lithographic apparatus including a multiphase engine according to clause 1. 9. The lithographic apparatus according to clause 8, further including: - an illumination system configured to condition a radiation beam; - a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; - a substrate table constructed to hold a substrate with a multiple target portion arranged in one or more columns parallel to an axis; - a projection system configured to project the patterned radiation beam onto a target portion of the substrate; and - a positioner to position the substrate table or the support, said positioner comprises the motor according to clause 1. 10. The lithographic apparatus according to clause 8, the positioner comprises a long-stroke module for coarse positioning and a short- stroke module for fine positioning, and the long-stroke module comprises the engine according to clause 1. 11. A device manufacturing method is used or a multiphase engine according to clause 1.

Claims (1)

1. Een lithografieimichting omvattende: een belichtinginrichting ingericht voor het leveren van een stralingsbundel; een drager geconstrueerd voor het dragen van een patroneerinrichting, welke patroneerinrichting in staat is een patroon aan te brengen in een doorsnede van de stralingsbundel ter vorming van een gepatroneerde stralingsbundel; een substraattafel geconstrueerd om een substraat te dragen; en een projectieinrichting ingericht voor het projecteren van de gepatroneerde stralingsbundel op een doelgebied van het substraat, met het kenmerk, dat de substraattafel is ingericht voor het positioneren van het doelgebied van het substraat in een brandpuntsvlak van de proj ectieinrichting.A lithography device comprising: an exposure device adapted to provide a radiation beam; a carrier constructed to support a patterning device, the patterning device being capable of applying a pattern in a section of the radiation beam to form a patterned radiation beam; a substrate table constructed to support a substrate; and a projection device adapted to project the patterned radiation beam onto a target area of the substrate, characterized in that the substrate table is adapted to position the target area of the substrate in a focal plane of the projection device.
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