NL2008514C2 - Solar cell. - Google Patents
Solar cell. Download PDFInfo
- Publication number
- NL2008514C2 NL2008514C2 NL2008514A NL2008514A NL2008514C2 NL 2008514 C2 NL2008514 C2 NL 2008514C2 NL 2008514 A NL2008514 A NL 2008514A NL 2008514 A NL2008514 A NL 2008514A NL 2008514 C2 NL2008514 C2 NL 2008514C2
- Authority
- NL
- Netherlands
- Prior art keywords
- wavelength
- solar cell
- converting
- binder
- electromagnetic radiation
- Prior art date
Links
- 239000000463 material Substances 0.000 claims description 63
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000002245 particle Substances 0.000 claims description 27
- 230000005670 electromagnetic radiation Effects 0.000 claims description 24
- 239000011230 binding agent Substances 0.000 claims description 18
- 239000000945 filler Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 150000002601 lanthanoid compounds Chemical class 0.000 claims description 4
- 239000002086 nanomaterial Substances 0.000 claims description 2
- 239000002096 quantum dot Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 49
- 238000006243 chemical reaction Methods 0.000 description 29
- 230000005855 radiation Effects 0.000 description 12
- 239000000126 substance Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000003100 immobilizing effect Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Description
Title: Solar cell
The present invention relates to a solar cell comprising semi conductor particles. The present invention further relates to a method for manufacturing a solar cell.
5 Photovoltaic solar cells present a unique potential for solving the world’s energy related problems. The main challenge is to improve their performance and to lower their production costs and capital investment costs for production. The majority of today’s solar cells make use of silicon wafers as absorbing material. Because of their relatively high material costs and limited possibilities for automated manufacturing, the cost reduction 10 potential of wafer based silicon solar cells is limited. Thin film solar cells offer better possibilities for cost reduction. However, the conversion efficiency of thin film solar cells is normally lower.
Thin film solar cells which make use of CIGS (Copper Indium Gallium Selenide) semiconductor material obtain conversion efficiencies in the same order of 15 magnitude as wafer based silicon solar cells. CZTS (Copper Zinc Tin Sulfide) solar cells are expected to offer similar high conversion efficiencies in the future with lower material costs. Moreover, CZTS solar cells make use of abundant and low cost materials. Performance, costs and investment costs for manufacturing of CIGS/CZTS solar cells are highly influenced by their production method.
20 State of the art CIGS/CZTS solar cells are based on particles consisting of or coated with absorber material and integrated in a membrane. The performance of such concept is basically higher, because the particles can be produced and crystallized under non limiting conditions. The main challenges left are the engineering of an optimal module manufacturing concept and an improvement of the packing density of the electromagnetic 25 radiation absorbing particles. Particle based solar cell membranes are disclosed in US 3,480,818, US 2007/0089782A1, W02010/006623A2, WO2010/000581A2 and US 2011/0232729A1.
Instead of improving the performance of the solar cell itself, matching the incident solar radiation to a spectrum which is best suited for a basic solar cell is also 30 investigated in the art. It is a problem of state of the art solar cells that 60% of the incident solar radiation is not converted into electrical energy due to spectral mismatch. Spectral mismatch results in the non-absorption of photons which carry less energy than the semiconductor band gap (energy range in a solid where no electron states can exist) and 2 the excess energy of photons, larger than the band gap. This band gap can also be represented in wave length and is here called the wavelength range.
It is an object of the present invention to improve the conversion efficiency of solar cells.
5 It is further an object of the present invention to improve the conversion efficiency of thin film solar cells.
It is further an object of the present invention to provide for a method to manufacture thin film solar cells.
One or more of the above objects is met by a solar cell according to the 10 present invention. A solar cell according to the present invention comprises semi conductor particles. These kinds of solar cells are referred to in the art as mono grain solar cells. These semi conductor particles convert electromagnetic radiation in a certain wavelength range to electric energy. Solar cells according to the present invention further comprise wavelength converting materials converting electromagnetic radiation of a wavelength 15 outside of the wavelength range to electromagnetic radiation of a wavelength inside of the wavelength range. Preferably, the solar cell according to the present invention is a thin film solar cell.
With wavelength range is meant the range wherein electromagnetic radiation is absorbed by the semiconductor material and converted into electric energy. 20 Hence electromagnetic radiation with a wavelength outside of the wavelength range is not converted to electric energy and/or absorbed by the semiconductor material and is the cause of spectral mismatch. Hence the wavelength converting material converts the spectral mismatched electromagnetic radiation into electromagnetic radiation matching the wavelength range of the solar cell. This results in a decrease of loss of energy due to 25 spectral mismatch and hence increases the efficiency of conversion of electromagnetic radiation to electric energy in the solar cell.
The semiconductor particles can be particles based on CIGS and/or CZTS material. An example of semiconductor particles which can be used in the present invention is disclosed in WO2010/006623 wherein the semiconductor materials are 30 disclosed as mono crystals (monograins).
The semiconductor particles can also be formed by a particulate base substance, semiconductor layers of a first conductive type that cover at least portions of the particulate base substance, and semiconductor layers of a second conductive type that 3 cover portions of the semiconductor layers of the first conductive type so as to form p/n junctions therewith.
The first conductive type and the second conductive type are different from each other. In the case that the first conductive type is a p-type semiconductor, the second 5 conductive type is an n-type semiconductor, and in the case that the first conductive semiconductor is n-type material, the second conductive type is p-type material, as is known in the art.
In an embodiment of the present invention the wavelength converting material comprises 2 components of which a first component converts electromagnetic 10 radiation of a wavelength which is longer than the wavelength range to a wavelength lying in the wavelength range (up converting component), and/or a second component converts electromagnetic radiation of a wavelength which is shorter than the wavelength range to a wavelength lying in the wavelength range (down converting component). Up conversion means that radiation of a longer wavelength is converted to radiation of a shorter 15 wavelength and hence to radiation with higher energy. Down conversion means that radiation of a short wavelength is converted to radiation of a longer wavelength and hence to radiation with lower energy.
Improved spectral conversion can be achieved by applying materials for down conversion, by applying materials for up conversion, or both. Down conversion 20 materials are preferably positioned in the solar cell such that it converts electromagnetic radiation before reaching the semiconducting material. Up conversion materials are preferably used for electromagnetic radiation which already has passed the semiconducting material.
In an embodiment of the present invention at least 2 components are 25 photoluminescent, preferably at least 1 of the components is phosphorescent. Photoluminescence is a process in which a substance absorbs electromagnetic radiation and then re-radiates electromagnetic radiation. The substances can be chosen depending on the wavelength or wavelengths on which the substance absorbs and radiates electromagnetic light. These substances are preferably chosen such that they absorb 30 electromagnetic radiation with a wavelength outside of the wavelength range of the semiconducting material and which substances radiate electromagnetic radiation at a wavelength lying within the wavelength range of the semiconducting material. This way also electromagnetic radiation with a wavelength outside of the wavelength range of the 4 semiconducting material contributes is utilized in the conversion of electromagnetic radiation to electric energy hence increasing the conversion efficiency of the solar cell.
In an embodiment of the present invention the wavelength converting material consists of structures such as quantum dots, luminescent dye molecules, or 5 lanthanide compounds. The presence of structures as wavelength converting material resulted in a noticeable increase of efficiency of the solar cell.
The inventor found that the structures comprising lanthanide compounds provided good results. Very good results were obtained with nano-structures comprising lanthanide compounds.
10 In an embodiment of the present invention a binding or filler material for immobilizing the semi conductor particles is present between the semiconductor particles a binding material for immobilizing the semi conductor particles is present, preferably the binder or filler material is optically transparent. Preferably the binder and/or filler material is chosen from the group consisting of glass, acrylic resin (PMMA), epoxy resin, silicone 15 rubber, silicone gel, polymer material (e.g. EVA or tedlar) or a composite or a combination of a plurality of such layers. In state of the art solar cells there is no need for transparent binding or filler material since no conversion material is present in the binding or filler material. For solar cells according to the present invention an increase in efficiency is observed when transparent material is used since more electromagnetic radiation is 20 enabled to reach the conversion material.
Preferably the bottom half of the solar cell (i.e. the bottom of the solar cell is the side not facing the sun during operation) is filled with binding and/or filler material comprising up conversion material and the top half with filling material comprising down conversion material.
25 In an embodiment of the present invention the wavelength converting materials are present in the binder material, preferably the down and up converting components are present as separate layers in the binder material.
In an embodiment of the present invention a solar cell comprises the following layers: 30 a. A transparent conductive electrode; b. A buffer layer c. A layer comprising the semi conductor particles, the wavelength converting material and the binder material; and 5 d. A back contact.
The layers are listed in the order starting from the solar side being layer a. to the bottom side of the solar cell being layer d. Hence electromagnetic radiation traveling through the solar cell firstly encounters layer a. and lastly layer d. Both layer a and d are 5 formed by a conductive material. The solar cell can further comprise a reflective layer for reflecting radiation which passed through the transparent conductive electrode, buffer layer and the layer comprising the semi conductor particles, the wavelength converting material and the binder material. Further an anti reflective layer can be present on the conductive electrode.
10 The present invention further provides a method for producing a solar cell comprising the steps of: i. Mixing a wavelength converting component in an optically transparent binder and/or filler material to obtain a mixture; ii. Forming a plate shaped article from the mixture obtained in step i.
15 iii. Arranging the semiconductor particles in the plate shaped article of step ii., obtaining layer c; iv. Forming a first electrode (back contact) at one side of layer c; v. Forming a buffer layer on a second side of layer c; vi. Forming a second electrode (transparent conductive electrode) on top 20 of the buffer layer of step vi.
The transparent conductive electrode preferably consists of a transparent conductive oxide (TCO) or a TCO with an additional metal grid.
With the method according to the present invention a solar cell with improved conversion efficiency can be manufactured. Preferably this method is used to 25 manufacture solar cells according to the present invention.
In an embodiment of the present invention in step i. two mixtures are obtained by mixing a wavelength converting component for up conversion in an optically transparent binder and/or filler material to obtain a first mixture and mixing the wavelength converting component for down conversion in a second batch of an optically transparent 30 binder material to obtain a second mixture. If two mixtures are obtained in step ii of the present invention each of the two mixtures can be used to separately to obtain plate shaped articles or the two mixtures can be mixed after which one plate shaped article is obtained.
6
The particles are provided to the plate shaped article in such a way that the filler and/or binder material fills e space between the particles .
Preferably if two plate shaped articles are obtained in step ii. The particles are provided in such a way to the plate shaped articles that the binding material which 5 comprises the wavelength converting materials for up conversion is filling the space at the bottom side of the cell to be obtained and the binding material which comprises the wavelength converting materials for down conversion is filling the space at the top of the cell to be obtained.
Preferably step ii. is subdivided in a step of providing the particles to a 10 surface after which the plate shaped article is provided on top of the particles. And next applying pressure and heat allowing the particles to move into the plate shaped article. Such a method is for example disclosed in US2011/0232729.
Figure 1 discloses a preferred embodiment of the present invention. The depicted solar cell comprises an anti reflection layer (1), a transparent conductive electrode 15 (TCE, 2), a buffer layer (3), a down conversion component (4), semiconductor particles (5), up conversion material (6), transparent binder and/or filler material (7) and a back contact (8). In figure 1 the anti reflective layer is positioned on the sun facing side of the solar cell. The back contact (8) is positioned on the bottom side of the solar cell i.e the side facing away from the sun. In figure 1 the up and down conversion components (6, 4) are 20 positioned such that radiation traveling through the solar cell first encounters the down conversion component (4) and next the up conversion component (6).
25
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2008514A NL2008514C2 (en) | 2012-03-21 | 2012-03-21 | Solar cell. |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2008514 | 2012-03-21 | ||
| NL2008514A NL2008514C2 (en) | 2012-03-21 | 2012-03-21 | Solar cell. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2008514C2 true NL2008514C2 (en) | 2013-09-25 |
Family
ID=46604465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2008514A NL2008514C2 (en) | 2012-03-21 | 2012-03-21 | Solar cell. |
Country Status (1)
| Country | Link |
|---|---|
| NL (1) | NL2008514C2 (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2904613A (en) * | 1957-08-26 | 1959-09-15 | Hoffman Electronics Corp | Large area solar energy converter and method for making the same |
| US3480818A (en) * | 1965-08-04 | 1969-11-25 | Philips Corp | Electrical monograin layers having a radiation permeable electrode |
| FR2417188A1 (en) * | 1978-02-08 | 1979-09-07 | Commissariat Energie Atomique | Photovoltaic solar energy converter - comprises semiconductor rod incorporated in transparent solid matrix doped with fluorescent product, improving conversion efficiency |
| US4514580A (en) * | 1983-12-02 | 1985-04-30 | Sri International | Particulate silicon photovoltaic device and method of making |
| WO2008051235A2 (en) * | 2005-11-10 | 2008-05-02 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle photovoltaic devices |
| DE102007047088A1 (en) * | 2007-10-01 | 2009-04-09 | Buskühl, Martin, Dr. | Photovoltaic module with at least one solar cell |
| WO2009097627A2 (en) * | 2008-02-03 | 2009-08-06 | Nliten Energy Corporation | Thin-film photovoltaic devices and related manufacturing methods |
| WO2009157879A1 (en) * | 2008-06-26 | 2009-12-30 | National University Of Singapore | A photovoltaic apparatus |
| WO2010104890A2 (en) * | 2009-03-09 | 2010-09-16 | The University Of North Carolina At Charlotte | Efficiency enhancement of solar cells using light management |
-
2012
- 2012-03-21 NL NL2008514A patent/NL2008514C2/en not_active IP Right Cessation
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2904613A (en) * | 1957-08-26 | 1959-09-15 | Hoffman Electronics Corp | Large area solar energy converter and method for making the same |
| US3480818A (en) * | 1965-08-04 | 1969-11-25 | Philips Corp | Electrical monograin layers having a radiation permeable electrode |
| FR2417188A1 (en) * | 1978-02-08 | 1979-09-07 | Commissariat Energie Atomique | Photovoltaic solar energy converter - comprises semiconductor rod incorporated in transparent solid matrix doped with fluorescent product, improving conversion efficiency |
| US4514580A (en) * | 1983-12-02 | 1985-04-30 | Sri International | Particulate silicon photovoltaic device and method of making |
| WO2008051235A2 (en) * | 2005-11-10 | 2008-05-02 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle photovoltaic devices |
| DE102007047088A1 (en) * | 2007-10-01 | 2009-04-09 | Buskühl, Martin, Dr. | Photovoltaic module with at least one solar cell |
| WO2009097627A2 (en) * | 2008-02-03 | 2009-08-06 | Nliten Energy Corporation | Thin-film photovoltaic devices and related manufacturing methods |
| WO2009157879A1 (en) * | 2008-06-26 | 2009-12-30 | National University Of Singapore | A photovoltaic apparatus |
| WO2010104890A2 (en) * | 2009-03-09 | 2010-09-16 | The University Of North Carolina At Charlotte | Efficiency enhancement of solar cells using light management |
Non-Patent Citations (1)
| Title |
|---|
| GALLAGHER ET AL: "Quantum dot solar concentrators: Electrical conversion efficiencies and comparative concentrating factors of fabricated devices", SOLAR ENERGY, PERGAMON PRESS. OXFORD, GB, vol. 81, no. 6, 11 May 2007 (2007-05-11), pages 813 - 821, XP022071340, ISSN: 0038-092X, DOI: 10.1016/J.SOLENER.2006.09.011 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11495703B2 (en) | Optical downshifting layer | |
| Klampaftis et al. | Enhancing the performance of solar cells via luminescent down-shifting of the incident spectrum: A review | |
| Berry et al. | Perovskite photovoltaics: the path to a printable terawatt-scale technology | |
| US8816191B2 (en) | High efficiency photovoltaic cells and manufacturing thereof | |
| Van Sark | Luminescent solar concentrators–A low cost photovoltaics alternative | |
| US20130206211A1 (en) | Phosphors-Based Solar Wavelength-Converters | |
| Jeong et al. | Ultrawide spectral response of CIGS solar cells integrated with luminescent down-shifting quantum dots | |
| US9406819B2 (en) | Photovoltaic component with a high conversion efficiency | |
| US20070012355A1 (en) | Nanostructured material comprising semiconductor nanocrystal complexes for use in solar cell and method of making a solar cell comprising nanostructured material | |
| US10651331B2 (en) | Solar cell module using semiconductor nanocrystals | |
| US20130042909A1 (en) | Photovoltaic cells based on nanoscale structures | |
| KR101079008B1 (en) | Composition light converter for poly silicon solar cell and solar cell | |
| CN102446987A (en) | Photovoltaic devices | |
| Lesyuk et al. | Toward cadmium-free spectral down-shifting converters for photovoltaic applications | |
| Van Sark et al. | Luminescent solar concentrators: The route to 10% efficiency | |
| NL2008514C2 (en) | Solar cell. | |
| RU2410796C1 (en) | Photovoltaic module design | |
| Klampaftis | On improving the short-wavelength response and efficiency of photovoltaic modules via luminescent down-shifting of the incident light | |
| KR100657942B1 (en) | Photovoltaic device encapsulation material and solar cell module containing the same | |
| JP6433101B2 (en) | Composite solar cells using molecular-terminated silicon nanoparticles | |
| Van Sark et al. | Improvement of spectral response of solar cells by deployment of spectral converters containing semiconductor nanocrystals | |
| Kubie et al. | Thin-Film Colloidal Quantum Dot Solar Cells | |
| Kong et al. | AgIn5S8/ZnS Quantum Dots for Luminescent Down-Shifting and Antireflective Layer in Enhancing Photovoltaic Performance | |
| CN105449038A (en) | Method for improving conversion efficiency of solar cell module | |
| WO2016087877A1 (en) | An optical device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM | Lapsed because of non-payment of the annual fee |
Effective date: 20160401 |