NL190883C - Inrichting voor het vormen van thermische beelden. - Google Patents

Inrichting voor het vormen van thermische beelden.

Info

Publication number
NL190883C
NL190883C NL8004275A NL8004275A NL190883C NL 190883 C NL190883 C NL 190883C NL 8004275 A NL8004275 A NL 8004275A NL 8004275 A NL8004275 A NL 8004275A NL 190883 C NL190883 C NL 190883C
Authority
NL
Netherlands
Prior art keywords
imaging device
thermal imaging
thermal
imaging
Prior art date
Application number
NL8004275A
Other languages
English (en)
Other versions
NL190883B (nl
NL8004275A (nl
Original Assignee
Secr Defence Brit
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Secr Defence Brit filed Critical Secr Defence Brit
Publication of NL8004275A publication Critical patent/NL8004275A/nl
Publication of NL190883B publication Critical patent/NL190883B/nl
Application granted granted Critical
Publication of NL190883C publication Critical patent/NL190883C/nl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
NL8004275A 1979-07-30 1980-07-25 Inrichting voor het vormen van thermische beelden. NL190883C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB7926455 1979-07-30
GB7926455 1979-07-30

Publications (3)

Publication Number Publication Date
NL8004275A NL8004275A (nl) 1989-01-02
NL190883B NL190883B (nl) 1994-05-02
NL190883C true NL190883C (nl) 1994-10-03

Family

ID=10506860

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8004275A NL190883C (nl) 1979-07-30 1980-07-25 Inrichting voor het vormen van thermische beelden.

Country Status (5)

Country Link
US (2) US5321290A (nl)
DE (1) DE3028915A1 (nl)
FR (1) FR2625398B1 (nl)
GB (1) GB2207801B (nl)
NL (1) NL190883C (nl)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1605321A (en) * 1978-03-31 1989-07-19 Philips Electronic Associated Thermal radiation imaging devices and systems
US6201242B1 (en) 1987-08-05 2001-03-13 Lockheed Martin Corporation Bandgap radiation detector
CA2036874A1 (en) * 1991-02-22 2002-07-10 Ltv Aerospace And Defense Company Bandgap radiation detector and method of fabrication
IL99592A (en) * 1991-09-27 1995-05-26 Bendix Avelex Inc Thermal imaging apparatus
US5438199A (en) * 1994-09-06 1995-08-01 Alliedsignal Inc. Thermal imaging apparatus with bias modulation
US6025595A (en) * 1997-02-07 2000-02-15 He Holdings, Inc. Sprite thermal imaging system with electronic zoom
US5739531A (en) * 1997-02-07 1998-04-14 He Holdings, Inc. Sprite thermal imaging system
US5773831A (en) * 1997-03-19 1998-06-30 Lockheed Martin Vought Systems Corporation Patch coupled infrared photodetector
US6054718A (en) * 1998-03-31 2000-04-25 Lockheed Martin Corporation Quantum well infrared photocathode having negative electron affinity surface
US6422743B1 (en) 1999-03-26 2002-07-23 Allison Advanced Development Company Method for determining heat transfer performance of an internally cooled structure
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US8476598B1 (en) * 2009-08-31 2013-07-02 Sionyx, Inc. Electromagnetic radiation imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
EP2583312A2 (en) 2010-06-18 2013-04-24 Sionyx, Inc. High speed photosensitive devices and associated methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
EP2732402A2 (en) 2011-07-13 2014-05-21 Sionyx, Inc. Biometric imaging devices and associated methods
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP6466346B2 (ja) 2013-02-15 2019-02-06 サイオニクス、エルエルシー アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
US9746376B2 (en) 2013-11-12 2017-08-29 EO Vista, LLC Apparatus and methods for hyperspectral imaging with parallax measurement
US9426397B2 (en) * 2013-11-12 2016-08-23 EO Vista, LLC Apparatus and methods for hyperspectral imaging with on-chip digital time delay and integration

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL280435A (nl) * 1962-07-02
GB1010583A (nl) * 1963-05-10
US3391282A (en) * 1965-02-19 1968-07-02 Fairchild Camera Instr Co Variable length photodiode using an inversion plate
US3704376A (en) * 1971-05-24 1972-11-28 Inventors & Investors Inc Photo-electric junction field-effect sensors
US3983573A (en) * 1974-03-12 1976-09-28 Nippon Electric Company, Ltd. Charge-coupled linear image sensing device
GB1488258A (en) * 1974-11-27 1977-10-12 Secr Defence Thermal radiation imaging devices and systems
US3961998A (en) * 1975-04-09 1976-06-08 The United States Of America As Represented By The Secretary Of The Navy Vacuum deposition method for fabricating an epitaxial pbsnte rectifying metal semiconductor contact photodetector
US4032903A (en) * 1976-02-13 1977-06-28 Rca Corporation Charge injection device arrays
US4035197A (en) * 1976-03-30 1977-07-12 Eastman Kodak Company Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture
US4062107A (en) * 1976-07-14 1977-12-13 U.S. Philips Corporation Method of manufacturing infra-red detector
DE2805531C2 (de) * 1978-02-10 1979-08-16 Fa. Carl Zeiss, 7920 Heidenheim Verfahren und Vorrichtung zur Erzeugung eines Wärmebildes mit Korn* pensation des Phasenfehlers
US4258254A (en) * 1978-04-25 1981-03-24 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Imaging devices and systems

Also Published As

Publication number Publication date
DE3028915A1 (de) 1989-05-03
US5321290A (en) 1994-06-14
FR2625398B1 (fr) 1994-02-04
GB2207801B (en) 1989-05-24
NL190883B (nl) 1994-05-02
GB2207801A (en) 1989-02-08
US4883962A (en) 1989-11-28
NL8004275A (nl) 1989-01-02
FR2625398A1 (fr) 1989-06-30

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Legal Events

Date Code Title Description
A1C A request for examination has been filed
V4 Discontinued because of reaching the maximum lifetime of a patent

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