NL183859C - SEMICONDUCTOR DEVICE CONTAINING AT LEAST A SEMICONDUCTOR ELEMENT WITH THREE CONsecutive ZONES OF ALTERNATING CONDUCTION TYPE. - Google Patents

SEMICONDUCTOR DEVICE CONTAINING AT LEAST A SEMICONDUCTOR ELEMENT WITH THREE CONsecutive ZONES OF ALTERNATING CONDUCTION TYPE.

Info

Publication number
NL183859C
NL183859C NL7800582A NL7800582A NL183859C NL 183859 C NL183859 C NL 183859C NL 7800582 A NL7800582 A NL 7800582A NL 7800582 A NL7800582 A NL 7800582A NL 183859 C NL183859 C NL 183859C
Authority
NL
Netherlands
Prior art keywords
conduction type
device containing
semiconductor device
semiconductor element
consecutive zones
Prior art date
Application number
NL7800582A
Other languages
Dutch (nl)
Other versions
NL183859B (en
NL7800582A (en
Inventor
Johannes Arnoldus Appels
Marnix Guillaume Ir Collet
Paul Anton Herman Dr Ir Hart
Johannes Fransiscus Verhoeven
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7800582A priority Critical patent/NL183859C/en
Priority to CA319,526A priority patent/CA1131801A/en
Priority to DE2901193A priority patent/DE2901193C2/en
Priority to IT19305/79A priority patent/IT1110026B/en
Priority to SE7900337A priority patent/SE432497B/en
Priority to BR7900229A priority patent/BR7900229A/en
Priority to GB791412A priority patent/GB2013029B/en
Priority to PL1979212822A priority patent/PL116562B1/en
Priority to CH41779A priority patent/CH638928A5/en
Priority to AT0031179A priority patent/AT380975B/en
Priority to ES476907A priority patent/ES476907A1/en
Priority to US06/004,004 priority patent/US4292642A/en
Priority to AU43405/79A priority patent/AU518446B2/en
Priority to FR7901086A priority patent/FR2415370A1/en
Priority to BE0/192972A priority patent/BE873570A/en
Priority to JP346579A priority patent/JPS54109780A/en
Publication of NL7800582A publication Critical patent/NL7800582A/en
Publication of NL183859B publication Critical patent/NL183859B/en
Application granted granted Critical
Publication of NL183859C publication Critical patent/NL183859C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
NL7800582A 1978-01-18 1978-01-18 SEMICONDUCTOR DEVICE CONTAINING AT LEAST A SEMICONDUCTOR ELEMENT WITH THREE CONsecutive ZONES OF ALTERNATING CONDUCTION TYPE. NL183859C (en)

Priority Applications (16)

Application Number Priority Date Filing Date Title
NL7800582A NL183859C (en) 1978-01-18 1978-01-18 SEMICONDUCTOR DEVICE CONTAINING AT LEAST A SEMICONDUCTOR ELEMENT WITH THREE CONsecutive ZONES OF ALTERNATING CONDUCTION TYPE.
CA319,526A CA1131801A (en) 1978-01-18 1979-01-11 Semiconductor device
DE2901193A DE2901193C2 (en) 1978-01-18 1979-01-13 Semiconductor device
SE7900337A SE432497B (en) 1978-01-18 1979-01-15 Semiconductor device with a bipolar semiconductor coupling element
BR7900229A BR7900229A (en) 1978-01-18 1979-01-15 SEMICONDUCTOR DEVICE
GB791412A GB2013029B (en) 1978-01-18 1979-01-15 Semiconductor device
IT19305/79A IT1110026B (en) 1978-01-18 1979-01-15 SEMICONDUCTIVE DEVICE
CH41779A CH638928A5 (en) 1978-01-18 1979-01-16 SEMICONDUCTOR ARRANGEMENT.
PL1979212822A PL116562B1 (en) 1978-01-18 1979-01-16 Semiconductor instrument
AT0031179A AT380975B (en) 1978-01-18 1979-01-16 SEMICONDUCTOR ARRANGEMENT WITH AT LEAST ONE BIPOLAR HIGH VOLTAGE SEMICONDUCTOR CIRCUIT ELEMENT
ES476907A ES476907A1 (en) 1978-01-18 1979-01-16 Semiconductor device
US06/004,004 US4292642A (en) 1978-01-18 1979-01-16 Semiconductor device
AU43405/79A AU518446B2 (en) 1978-01-18 1979-01-16 Planar bipolar semiconductor device
FR7901086A FR2415370A1 (en) 1978-01-18 1979-01-17 SEMICONDUCTOR DEVICE EQUIPPED WITH A HIGH VOLTAGE BIPOLAR PLANAR SEMICONDUCTOR COMPONENT
BE0/192972A BE873570A (en) 1978-01-18 1979-01-18 SEMICONDUCTOR DEVICE EQUIPPED WITH A HIGH VOLTAGE BIPOLAR PLANAR SEMICONDUCTOR COMPONENT
JP346579A JPS54109780A (en) 1978-01-18 1979-01-18 Semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7800582A NL183859C (en) 1978-01-18 1978-01-18 SEMICONDUCTOR DEVICE CONTAINING AT LEAST A SEMICONDUCTOR ELEMENT WITH THREE CONsecutive ZONES OF ALTERNATING CONDUCTION TYPE.

Publications (3)

Publication Number Publication Date
NL7800582A NL7800582A (en) 1979-07-20
NL183859B NL183859B (en) 1988-09-01
NL183859C true NL183859C (en) 1989-02-01

Family

ID=19830171

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7800582A NL183859C (en) 1978-01-18 1978-01-18 SEMICONDUCTOR DEVICE CONTAINING AT LEAST A SEMICONDUCTOR ELEMENT WITH THREE CONsecutive ZONES OF ALTERNATING CONDUCTION TYPE.

Country Status (1)

Country Link
NL (1) NL183859C (en)

Also Published As

Publication number Publication date
NL183859B (en) 1988-09-01
NL7800582A (en) 1979-07-20

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee