NL175474B - MEMORY CELL. - Google Patents

MEMORY CELL.

Info

Publication number
NL175474B
NL175474B NLAANVRAGE7102040,A NL7102040A NL175474B NL 175474 B NL175474 B NL 175474B NL 7102040 A NL7102040 A NL 7102040A NL 175474 B NL175474 B NL 175474B
Authority
NL
Netherlands
Prior art keywords
memory cell
cell
memory
Prior art date
Application number
NLAANVRAGE7102040,A
Other languages
Dutch (nl)
Other versions
NL175474C (en
NL7102040A (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL7102040A publication Critical patent/NL7102040A/xx
Publication of NL175474B publication Critical patent/NL175474B/en
Application granted granted Critical
Publication of NL175474C publication Critical patent/NL175474C/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/013—Modifications of generator to prevent operation by noise or interference
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components
NLAANVRAGE7102040,A 1970-02-17 1971-02-16 MEMORY CELL. NL175474C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1208470A 1970-02-17 1970-02-17

Publications (3)

Publication Number Publication Date
NL7102040A NL7102040A (en) 1971-08-19
NL175474B true NL175474B (en) 1984-06-01
NL175474C NL175474C (en) 1984-11-01

Family

ID=21753318

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7102040,A NL175474C (en) 1970-02-17 1971-02-16 MEMORY CELL.

Country Status (8)

Country Link
JP (1) JPS5245172B1 (en)
BE (1) BE763002A (en)
DE (1) DE2107280A1 (en)
FR (1) FR2091964B1 (en)
GB (1) GB1340536A (en)
HK (1) HK38577A (en)
NL (1) NL175474C (en)
SE (1) SE374973B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9002558D0 (en) * 1990-08-02 1990-08-02 Carlstedt Elektronik Ab PROCESSOR

Also Published As

Publication number Publication date
DE2107280A1 (en) 1971-09-16
GB1340536A (en) 1973-12-12
NL175474C (en) 1984-11-01
BE763002A (en) 1971-07-16
NL7102040A (en) 1971-08-19
SE374973B (en) 1975-03-24
HK38577A (en) 1977-07-29
FR2091964A1 (en) 1972-01-21
JPS5245172B1 (en) 1977-11-14
FR2091964B1 (en) 1974-03-22

Similar Documents

Publication Publication Date Title
DK132357B (en) Binary storage cell.
NL175766C (en) INTEGRATED MEMORY CELL.
CH546997A (en) MEMORY ARRANGEMENT.
NL170969C (en) ELECTROLYSIS CELL.
NL179425C (en) MONOLITIC MEMORY.
AT314229B (en) Read-only memory
NL170472C (en) SLIDE REGISTER MEMORY.
DK129884B (en) Gas-tight accumulator.
AR203076A1 (en) NON-VOLATILE MEMORY CELL
NL178368C (en) SEMICONDUCTOR MEMORY.
CH518610A (en) Associative memory cell
NL170070C (en) FUEL CELL.
AT314228B (en) Read-only memory
CH527432A (en) Helogram memory
DK129766B (en) Salvebase.
DD87699A5 (en) STORAGE UNIT.
NL162516C (en) LEAD ACCUMULATOR CELL.
CH546584A (en) SKIBOB.
NL175474C (en) MEMORY CELL.
DK131442B (en) Lead accumulator cell.
DK124723B (en) Read.
NL170473C (en) CARRYING CONSTRUCTION.
CH549227A (en) PHOTOCOPYER.
BE756275A (en) BIGOUDI.
SU471608A1 (en) Memory cell

Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee