NL171310C - Halfgeleiderdiode, omvattende een laag van een ferromagnetisch halfgeleidermateriaal van het chalcogenide chroomspineltype en een laag van een ander halfgeleidermateriaal van het zwavel-indiumspineltype. - Google Patents

Halfgeleiderdiode, omvattende een laag van een ferromagnetisch halfgeleidermateriaal van het chalcogenide chroomspineltype en een laag van een ander halfgeleidermateriaal van het zwavel-indiumspineltype.

Info

Publication number
NL171310C
NL171310C NLAANVRAGE7802106,A NL7802106A NL171310C NL 171310 C NL171310 C NL 171310C NL 7802106 A NL7802106 A NL 7802106A NL 171310 C NL171310 C NL 171310C
Authority
NL
Netherlands
Prior art keywords
layer
spinel type
semiconductor material
diod
chalcogenide
Prior art date
Application number
NLAANVRAGE7802106,A
Other languages
English (en)
Dutch (nl)
Other versions
NL7802106A (nl
NL171310B (nl
Original Assignee
Nat Res Inst Metals
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Res Inst Metals filed Critical Nat Res Inst Metals
Publication of NL7802106A publication Critical patent/NL7802106A/xx
Publication of NL171310B publication Critical patent/NL171310B/xx
Application granted granted Critical
Publication of NL171310C publication Critical patent/NL171310C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
NLAANVRAGE7802106,A 1977-02-24 1978-02-24 Halfgeleiderdiode, omvattende een laag van een ferromagnetisch halfgeleidermateriaal van het chalcogenide chroomspineltype en een laag van een ander halfgeleidermateriaal van het zwavel-indiumspineltype. NL171310C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1867777A JPS53104189A (en) 1977-02-24 1977-02-24 Photovoltaic element

Publications (3)

Publication Number Publication Date
NL7802106A NL7802106A (nl) 1978-08-28
NL171310B NL171310B (nl) 1982-10-01
NL171310C true NL171310C (nl) 1983-03-01

Family

ID=11978228

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7802106,A NL171310C (nl) 1977-02-24 1978-02-24 Halfgeleiderdiode, omvattende een laag van een ferromagnetisch halfgeleidermateriaal van het chalcogenide chroomspineltype en een laag van een ander halfgeleidermateriaal van het zwavel-indiumspineltype.

Country Status (3)

Country Link
US (1) US4176370A (xx)
JP (1) JPS53104189A (xx)
NL (1) NL171310C (xx)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941983U (ja) * 1982-09-10 1984-03-17 パイオニア株式会社 ジヤツク取付装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236832B2 (xx) * 1974-08-15 1977-09-19

Also Published As

Publication number Publication date
JPS5436079B2 (xx) 1979-11-07
JPS53104189A (en) 1978-09-11
US4176370A (en) 1979-11-27
NL7802106A (nl) 1978-08-28
NL171310B (nl) 1982-10-01

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Legal Events

Date Code Title Description
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee