NL166779B - Verwarmingsinstallatie of een soortgelijke inrichting die werkt met een onder druk staande vloeistof. - Google Patents

Verwarmingsinstallatie of een soortgelijke inrichting die werkt met een onder druk staande vloeistof.

Info

Publication number
NL166779B
NL166779B NL7115222.A NL166779DA NL166779B NL 166779 B NL166779 B NL 166779B NL 166779D A NL166779D A NL 166779DA NL 166779 B NL166779 B NL 166779B
Authority
NL
Netherlands
Prior art keywords
pressure liquid
similar device
device operating
heating installation
installation
Prior art date
Application number
NL7115222.A
Other languages
English (en)
Original Assignee
Warmac Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL166779B publication Critical patent/NL166779B/nl

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F5/00—Amplifiers with both discharge tubes and semiconductor devices as amplifying elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/02—Cathode ray tubes; Electron beam tubes having one or more output electrodes which may be impacted selectively by the ray or beam, and onto, from, or over which the ray or beam may be deflected or de-focused
    • H01J31/04—Cathode ray tubes; Electron beam tubes having one or more output electrodes which may be impacted selectively by the ray or beam, and onto, from, or over which the ray or beam may be deflected or de-focused with only one or two output electrodes with only two electrically independant groups or electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/10—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being vacuum tube
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/26—Push-pull amplifiers; Phase-splitters therefor
    • H03F3/28—Push-pull amplifiers; Phase-splitters therefor with tubes only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S313/00—Electric lamp and discharge devices
    • Y10S313/07—Bombardment induced conductivity

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Particle Accelerators (AREA)
NL7115222.A 1951-01-18 Verwarmingsinstallatie of een soortgelijke inrichting die werkt met een onder druk staande vloeistof. NL166779B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US206586A US2600373A (en) 1951-01-18 1951-01-18 Semiconductor translating device

Publications (1)

Publication Number Publication Date
NL166779B true NL166779B (nl)

Family

ID=22767039

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7115222.A NL166779B (nl) 1951-01-18 Verwarmingsinstallatie of een soortgelijke inrichting die werkt met een onder druk staande vloeistof.

Country Status (5)

Country Link
US (1) US2600373A (nl)
BE (1) BE508500A (nl)
CH (1) CH302712A (nl)
FR (1) FR1054785A (nl)
NL (1) NL166779B (nl)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2786880A (en) * 1951-06-16 1957-03-26 Bell Telephone Labor Inc Signal translating device
GB692337A (en) * 1951-10-24 1953-06-03 Standard Telephones Cables Ltd Improvements in or relating to electron beam tube arrangements
FR1060954A (fr) * 1953-06-16 1954-04-07 Dispositif assurant la localisation du point d'impact des rayons cathodiques sur l'une des surfaces d'un système émetteur
US2832001A (en) * 1954-08-27 1958-04-22 Zenith Radio Corp Electron discharge systems
US2860282A (en) * 1955-04-25 1958-11-11 Litton Ind Of California Electron discharge storage tubes
US2868988A (en) * 1955-12-22 1959-01-13 Miller William Method of reducing transient reverse current
US3233182A (en) * 1958-05-28 1966-02-01 Zenith Radio Corp Parametric electronic signal amplifying methods and apparatus
US3015738A (en) * 1958-10-17 1962-01-02 Bell Telephone Labor Inc Signal translating device
US3160762A (en) * 1960-04-21 1964-12-08 Rca Corp Hall effect device employing mechanical stress applied across crystal to effect change in hall voltage
US3252030A (en) * 1960-06-21 1966-05-17 Diamond Power Speciality Photoelectric camera tube with transistor-type photoanode
US4263531A (en) * 1971-06-10 1981-04-21 Yoder Max N Electron beam-semiconductor diode hybrid device for phase control
US3733510A (en) * 1971-08-17 1973-05-15 Us Army Electron discharge devices using electron-bombarded semiconductors
US3749961A (en) * 1971-12-06 1973-07-31 Watkins Johnson Co Electron bombarded semiconductor device
US3916255A (en) * 1974-03-25 1975-10-28 Northrop Corp Phase array target amplifiers

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB539661A (en) * 1940-01-15 1941-09-19 Internat Television Corp Ltd Improvements in or relating to thermionic discharge devices
US2460690A (en) * 1946-11-14 1949-02-01 Askania Regulator Co Modulator
US2543039A (en) * 1947-05-14 1951-02-27 Bell Telephone Labor Inc Bombardment induced conductivity in solid insulators
NL152683C (nl) * 1949-03-31

Also Published As

Publication number Publication date
BE508500A (nl)
CH302712A (de) 1954-10-31
US2600373A (en) 1952-06-10
FR1054785A (fr) 1954-02-12

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