NL145398B - Werkwijze voor het schakelen van een geintegreerde elektrische schakeling, en geintegreerde elektrische schakeling voor het toepassen van deze werkwijze. - Google Patents

Werkwijze voor het schakelen van een geintegreerde elektrische schakeling, en geintegreerde elektrische schakeling voor het toepassen van deze werkwijze.

Info

Publication number
NL145398B
NL145398B NL646402246A NL6402246A NL145398B NL 145398 B NL145398 B NL 145398B NL 646402246 A NL646402246 A NL 646402246A NL 6402246 A NL6402246 A NL 6402246A NL 145398 B NL145398 B NL 145398B
Authority
NL
Netherlands
Prior art keywords
electrical circuit
integrated electrical
switching
procedure
applying
Prior art date
Application number
NL646402246A
Other languages
English (en)
Other versions
NL6402246A (nl
Original Assignee
Csf
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Csf filed Critical Csf
Publication of NL6402246A publication Critical patent/NL6402246A/xx
Publication of NL145398B publication Critical patent/NL145398B/nl

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/136—Resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
NL646402246A 1963-03-06 1964-03-05 Werkwijze voor het schakelen van een geintegreerde elektrische schakeling, en geintegreerde elektrische schakeling voor het toepassen van deze werkwijze. NL145398B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR926978A FR1358573A (fr) 1963-03-06 1963-03-06 Circuit électrique intégré

Publications (2)

Publication Number Publication Date
NL6402246A NL6402246A (nl) 1964-09-07
NL145398B true NL145398B (nl) 1975-03-17

Family

ID=8798547

Family Applications (1)

Application Number Title Priority Date Filing Date
NL646402246A NL145398B (nl) 1963-03-06 1964-03-05 Werkwijze voor het schakelen van een geintegreerde elektrische schakeling, en geintegreerde elektrische schakeling voor het toepassen van deze werkwijze.

Country Status (6)

Country Link
US (1) US3379941A (nl)
DE (1) DE1464829C3 (nl)
FR (1) FR1358573A (nl)
GB (1) GB1024790A (nl)
NL (1) NL145398B (nl)
SE (1) SE333985B (nl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3539839A (en) * 1966-01-31 1970-11-10 Nippon Electric Co Semiconductor memory device
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
US5446300A (en) * 1992-11-04 1995-08-29 North American Philips Corporation Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3035186A (en) * 1959-06-15 1962-05-15 Bell Telephone Labor Inc Semiconductor switching apparatus
US3150299A (en) * 1959-09-11 1964-09-22 Fairchild Camera Instr Co Semiconductor circuit complex having isolation means
US3208002A (en) * 1959-09-18 1965-09-21 Texas Instruments Inc Semiconductor integrated circuit device using field-effect transistors
NL260481A (nl) * 1960-02-08
US3112411A (en) * 1960-05-02 1963-11-26 Texas Instruments Inc Ring counter utilizing bipolar field-effect devices
US3242394A (en) * 1960-05-02 1966-03-22 Texas Instruments Inc Voltage variable resistor
NL274363A (nl) * 1960-05-02
US3134912A (en) * 1960-05-02 1964-05-26 Texas Instruments Inc Multivibrator employing field effect devices as transistors and voltage variable resistors in integrated semiconductive structure
US3230398A (en) * 1960-05-02 1966-01-18 Texas Instruments Inc Integrated structure semiconductor network forming bipolar field effect transistor
US3171042A (en) * 1961-09-08 1965-02-23 Bendix Corp Device with combination of unipolar means and tunnel diode means
US3284723A (en) * 1962-07-02 1966-11-08 Westinghouse Electric Corp Oscillatory circuit and monolithic semiconductor device therefor
US3237018A (en) * 1962-07-09 1966-02-22 Honeywell Inc Integrated semiconductor switch

Also Published As

Publication number Publication date
GB1024790A (en) 1966-04-06
SE333985B (nl) 1971-04-05
FR1358573A (fr) 1964-04-17
DE1464829B2 (de) 1975-03-13
US3379941A (en) 1968-04-23
DE1464829C3 (de) 1975-10-30
DE1464829A1 (de) 1969-06-26
NL6402246A (nl) 1964-09-07

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