NL141711B - Gestuurde siliciumgelijkrichter. - Google Patents

Gestuurde siliciumgelijkrichter.

Info

Publication number
NL141711B
NL141711B NL302103A NL302103A NL141711B NL 141711 B NL141711 B NL 141711B NL 302103 A NL302103 A NL 302103A NL 302103 A NL302103 A NL 302103A NL 141711 B NL141711 B NL 141711B
Authority
NL
Netherlands
Prior art keywords
silicon rectifier
controlled silicon
controlled
rectifier
silicon
Prior art date
Application number
NL302103A
Other languages
English (en)
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Publication of NL141711B publication Critical patent/NL141711B/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
NL302103A 1962-12-19 1963-12-18 Gestuurde siliciumgelijkrichter. NL141711B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1962L0043740 DE1257975B (de) 1962-12-19 1962-12-19 Steuerbarer Halbleitergleichrichter mit mindestens vier Zonen

Publications (1)

Publication Number Publication Date
NL141711B true NL141711B (nl) 1974-03-15

Family

ID=7270402

Family Applications (2)

Application Number Title Priority Date Filing Date
NL302103D NL302103A (nl) 1962-12-19
NL302103A NL141711B (nl) 1962-12-19 1963-12-18 Gestuurde siliciumgelijkrichter.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL302103D NL302103A (nl) 1962-12-19

Country Status (3)

Country Link
DE (1) DE1257975B (nl)
FR (1) FR1379254A (nl)
NL (2) NL141711B (nl)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1112301A (en) * 1964-07-27 1968-05-01 Gen Electric Controlled rectifier with improved turn-on and turn-off characteristics
US3614556A (en) * 1968-04-16 1971-10-19 Tokyo Shibaura Electric Co Magnetosensitive semiconductor switching device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1132247B (de) * 1959-01-30 1962-06-28 Siemens Ag Gesteuerte Vierschichtentriode mit vier Halbleiterschichten abwechselnden Leitfaehigkeitstyps

Also Published As

Publication number Publication date
DE1257975B (de) 1968-01-04
NL302103A (nl)
FR1379254A (fr) 1964-11-20

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