NL141711B - Gestuurde siliciumgelijkrichter. - Google Patents
Gestuurde siliciumgelijkrichter.Info
- Publication number
- NL141711B NL141711B NL302103A NL302103A NL141711B NL 141711 B NL141711 B NL 141711B NL 302103 A NL302103 A NL 302103A NL 302103 A NL302103 A NL 302103A NL 141711 B NL141711 B NL 141711B
- Authority
- NL
- Netherlands
- Prior art keywords
- silicon rectifier
- controlled silicon
- controlled
- rectifier
- silicon
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1962L0043740 DE1257975B (de) | 1962-12-19 | 1962-12-19 | Steuerbarer Halbleitergleichrichter mit mindestens vier Zonen |
Publications (1)
Publication Number | Publication Date |
---|---|
NL141711B true NL141711B (nl) | 1974-03-15 |
Family
ID=7270402
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL302103D NL302103A (nl) | 1962-12-19 | ||
NL302103A NL141711B (nl) | 1962-12-19 | 1963-12-18 | Gestuurde siliciumgelijkrichter. |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL302103D NL302103A (nl) | 1962-12-19 |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1257975B (nl) |
FR (1) | FR1379254A (nl) |
NL (2) | NL141711B (nl) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1112301A (en) * | 1964-07-27 | 1968-05-01 | Gen Electric | Controlled rectifier with improved turn-on and turn-off characteristics |
US3614556A (en) * | 1968-04-16 | 1971-10-19 | Tokyo Shibaura Electric Co | Magnetosensitive semiconductor switching device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1132247B (de) * | 1959-01-30 | 1962-06-28 | Siemens Ag | Gesteuerte Vierschichtentriode mit vier Halbleiterschichten abwechselnden Leitfaehigkeitstyps |
-
0
- NL NL302103D patent/NL302103A/xx unknown
-
1962
- 1962-12-19 DE DE1962L0043740 patent/DE1257975B/de active Pending
-
1963
- 1963-12-18 NL NL302103A patent/NL141711B/nl unknown
- 1963-12-19 FR FR2469A patent/FR1379254A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1257975B (de) | 1968-01-04 |
NL302103A (nl) | |
FR1379254A (fr) | 1964-11-20 |
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