NL138893B - PROCEDURE FOR MANUFACTURE OF A SEMICONDUCTOR DEVICE, ESPECIALLY A TRANSISTOR, BY INCLUDING AN ALUMINUM CONTAINING ELECTRODE INTO A GERMANIUM CRYSTAL AND SEMICONDUCTOR DEVICE MANUFACTURED BY USING THIS PROCESS. - Google Patents

PROCEDURE FOR MANUFACTURE OF A SEMICONDUCTOR DEVICE, ESPECIALLY A TRANSISTOR, BY INCLUDING AN ALUMINUM CONTAINING ELECTRODE INTO A GERMANIUM CRYSTAL AND SEMICONDUCTOR DEVICE MANUFACTURED BY USING THIS PROCESS.

Info

Publication number
NL138893B
NL138893B NL255823A NL255823A NL138893B NL 138893 B NL138893 B NL 138893B NL 255823 A NL255823 A NL 255823A NL 255823 A NL255823 A NL 255823A NL 138893 B NL138893 B NL 138893B
Authority
NL
Netherlands
Prior art keywords
semiconductor device
transistor
procedure
manufacture
aluminum containing
Prior art date
Application number
NL255823A
Other languages
Dutch (nl)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NL138893B publication Critical patent/NL138893B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
NL255823A 1959-11-13 1960-09-12 PROCEDURE FOR MANUFACTURE OF A SEMICONDUCTOR DEVICE, ESPECIALLY A TRANSISTOR, BY INCLUDING AN ALUMINUM CONTAINING ELECTRODE INTO A GERMANIUM CRYSTAL AND SEMICONDUCTOR DEVICE MANUFACTURED BY USING THIS PROCESS. NL138893B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0065818 1959-11-13

Publications (1)

Publication Number Publication Date
NL138893B true NL138893B (en) 1973-05-15

Family

ID=7498329

Family Applications (2)

Application Number Title Priority Date Filing Date
NL255823D NL255823A (en) 1959-11-13 1960-09-12
NL255823A NL138893B (en) 1959-11-13 1960-09-12 PROCEDURE FOR MANUFACTURE OF A SEMICONDUCTOR DEVICE, ESPECIALLY A TRANSISTOR, BY INCLUDING AN ALUMINUM CONTAINING ELECTRODE INTO A GERMANIUM CRYSTAL AND SEMICONDUCTOR DEVICE MANUFACTURED BY USING THIS PROCESS.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL255823D NL255823A (en) 1959-11-13 1960-09-12

Country Status (4)

Country Link
BE (1) BE596820A (en)
CH (1) CH427037A (en)
GB (1) GB917727A (en)
NL (2) NL255823A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390024A (en) * 1965-03-11 1968-06-25 Texas Instruments Inc Flux for fusing tin to gallium arsenide and method of making and using same

Also Published As

Publication number Publication date
NL255823A (en)
BE596820A (en) 1961-03-01
GB917727A (en) 1963-02-06
CH427037A (en) 1966-12-31

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