NL135876C - - Google Patents

Info

Publication number
NL135876C
NL135876C NL135876DA NL135876C NL 135876 C NL135876 C NL 135876C NL 135876D A NL135876D A NL 135876DA NL 135876 C NL135876 C NL 135876C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL135876C publication Critical patent/NL135876C/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6304Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6322Formation by thermal treatments
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
NL135876D 1963-06-11 NL135876C (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB23167/63A GB1027476A (en) 1963-06-11 1963-06-11 Manufacture of semi-conductor devices

Publications (1)

Publication Number Publication Date
NL135876C true NL135876C (https=)

Family

ID=10191259

Family Applications (3)

Application Number Title Priority Date Filing Date
NL135876D NL135876C (https=) 1963-06-11
NL6406573A NL6406573A (https=) 1963-06-11 1964-06-10
NL6406574A NL6406574A (https=) 1963-06-11 1964-06-10

Family Applications After (2)

Application Number Title Priority Date Filing Date
NL6406573A NL6406573A (https=) 1963-06-11 1964-06-10
NL6406574A NL6406574A (https=) 1963-06-11 1964-06-10

Country Status (3)

Country Link
US (1) US3328216A (https=)
GB (1) GB1027476A (https=)
NL (3) NL6406573A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1419202A (fr) * 1963-12-31 1965-11-26 Ibm Contacts ohmiques pour éléments semi-conducteurs
US3372063A (en) * 1964-12-22 1968-03-05 Hitachi Ltd Method for manufacturing at least one electrically isolated region of a semiconductive material
US3401449A (en) * 1965-10-24 1968-09-17 Texas Instruments Inc Method of fabricating a metal base transistor
US3479736A (en) * 1966-08-31 1969-11-25 Hitachi Ltd Method of making a semiconductor device
US3632433A (en) * 1967-03-29 1972-01-04 Hitachi Ltd Method for producing a semiconductor device
US3545076A (en) * 1967-08-22 1970-12-08 Bosch Gmbh Robert Process of forming contacts on electrical parts,particularly silicon semiconductors
US3909304A (en) * 1974-05-03 1975-09-30 Western Electric Co Method of doping a semiconductor body
GB2206994A (en) * 1987-06-08 1989-01-18 Philips Electronic Associated Semiconductor device
EP0631301A1 (de) * 1993-06-21 1994-12-28 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Herstellverfahren für ein Leistungshalbleiterbauelement für hohe Abkommutierungssteilheit
CN113329564B (zh) * 2021-04-10 2022-04-19 山东永而佳电子科技有限公司 一种发光二极管生产工艺及表面粗糙化加工装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2962394A (en) * 1957-06-20 1960-11-29 Motorola Inc Process for plating a silicon base semiconductive unit with nickel
US2873222A (en) * 1957-11-07 1959-02-10 Bell Telephone Labor Inc Vapor-solid diffusion of semiconductive material
US2974073A (en) * 1958-12-04 1961-03-07 Rca Corp Method of making phosphorus diffused silicon semiconductor devices
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon
US3154450A (en) * 1960-01-27 1964-10-27 Bendix Corp Method of making mesas for diodes by etching
NL269092A (https=) * 1960-09-09 1900-01-01
US3203840A (en) * 1961-12-14 1965-08-31 Texas Insutruments Inc Diffusion method
BE636317A (https=) * 1962-08-23 1900-01-01

Also Published As

Publication number Publication date
NL6406574A (https=) 1964-12-14
NL6406573A (https=) 1964-12-14
US3328216A (en) 1967-06-27
GB1027476A (en) 1966-04-27

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