NL133278C - - Google Patents

Info

Publication number
NL133278C
NL133278C NL133278DA NL133278C NL 133278 C NL133278 C NL 133278C NL 133278D A NL133278D A NL 133278DA NL 133278 C NL133278 C NL 133278C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL133278C publication Critical patent/NL133278C/xx

Links

Classifications

    • H10W74/131
NL133278D 1960-04-30 NL133278C (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES68299A DE1126516B (de) 1960-04-30 1960-04-30 Verfahren zur Herstellung von Halbleiteranordnungen mit pn-UEbergang

Publications (1)

Publication Number Publication Date
NL133278C true NL133278C (en:Method)

Family

ID=7500187

Family Applications (2)

Application Number Title Priority Date Filing Date
NL133278D NL133278C (en:Method) 1960-04-30
NL259748D NL259748A (en:Method) 1960-04-30

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL259748D NL259748A (en:Method) 1960-04-30

Country Status (5)

Country Link
US (1) US3160520A (en:Method)
CH (1) CH389783A (en:Method)
DE (1) DE1126516B (en:Method)
GB (1) GB935459A (en:Method)
NL (2) NL259748A (en:Method)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3309226A (en) * 1967-03-14 Photoresistors and photoelements hav- ing increased sensitivity in the short- wave region of the spectrum
NL291914A (en:Method) * 1962-04-25
GB1054422A (en:Method) * 1963-03-16 1900-01-01
US3295029A (en) * 1963-04-03 1966-12-27 Gen Electric Field effect semiconductor device with polar polymer covered oxide coating
US3416046A (en) * 1965-12-13 1968-12-10 Dickson Electronics Corp Encased zener diode assembly and method of producing same
DE1564580A1 (de) * 1966-04-27 1969-07-31 Semikron Gleichrichterbau Verfahren zur Stabilisierung der Sperreigenschaft von Halbleiterbauelementen
GB1232812A (en:Method) * 1968-02-02 1971-05-19
DE1816841A1 (de) * 1968-12-04 1970-07-02 Siemens Ag Verfahren zum Stabilisieren der Kennlinie eines Halbleiterbauelements
US3599057A (en) * 1969-02-03 1971-08-10 Gen Electric Semiconductor device with a resilient lead construction
SE375881B (en:Method) * 1972-11-17 1975-04-28 Asea Ab
US4040874A (en) * 1975-08-04 1977-08-09 General Electric Company Semiconductor element having a polymeric protective coating and glass coating overlay
US4017340A (en) * 1975-08-04 1977-04-12 General Electric Company Semiconductor element having a polymeric protective coating and glass coating overlay
US20100062327A1 (en) * 2008-09-09 2010-03-11 Lin-Feng Li Non-toxic alkaline electrolyte with additives for rechargeable zinc cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2832702A (en) * 1955-08-18 1958-04-29 Hughes Aircraft Co Method of treating semiconductor bodies for translating devices
NL230243A (en:Method) * 1957-08-07
US2937110A (en) * 1958-07-17 1960-05-17 Westinghouse Electric Corp Protective treatment for semiconductor devices
NL241488A (en:Method) * 1958-07-21 1900-01-01

Also Published As

Publication number Publication date
NL259748A (en:Method)
US3160520A (en) 1964-12-08
DE1126516B (de) 1962-03-29
CH389783A (de) 1965-03-31
GB935459A (en) 1963-08-28

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