NL124690C - - Google Patents

Info

Publication number: NL124690C
Authority: NL; Netherlands

Application number

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1958-05-29

Publication of NL124690C publication Critical patent/NL124690C/xx

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Silicon Compounds (AREA)

NL124690D 1958-05-29 NL124690C (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US738821A US3058812A (en)	1958-05-29	1958-05-29	Process and apparatus for producing silicon

Publications (1)

Publication Number	Publication Date
NL124690C true NL124690C (it)

Family

ID=24969624

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
NL238464D NL238464A (it)	1958-05-29
NL124690D NL124690C (it)	1958-05-29

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
NL238464D NL238464A (it)	1958-05-29

Country Status (6)

Country	Link
US (1)	US3058812A (it)
CH (1)	CH394136A (it)
DE (2)	DE1142347B (it)
FR (1)	FR1225567A (it)
GB (1)	GB875622A (it)
NL (2)	NL124690C (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1061593B (de) *	1956-06-25	1959-07-16	Siemens Ag	Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
US3310426A (en) *	1963-10-02	1967-03-21	Siemens Ag	Method and apparatus for producing semiconductor material
NL6700080A (it) *	1966-01-03	1967-07-04
US3459152A (en) *	1964-08-28	1969-08-05	Westinghouse Electric Corp	Apparatus for epitaxially producing a layer on a substrate
DE1262244B (de) *	1964-12-23	1968-03-07	Siemens Ag	Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial
DE1297086B (de) *	1965-01-29	1969-06-12	Siemens Ag	Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial
DE2050076C3 (de) *	1970-10-12	1980-06-26	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial
JPS53106626A (en) *	1977-03-02	1978-09-16	Komatsu Mfg Co Ltd	Method of making high purity rod silicon and appratus therefor
DE2912661C2 (de) *	1979-03-30	1982-06-24	Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen	Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens
US4481232A (en) *	1983-05-27	1984-11-06	The United States Of America As Represented By The Department Of Energy	Method and apparatus for producing high purity silicon
KR101811872B1 (ko) *	2007-09-20	2017-12-22	미츠비시 마테리알 가부시키가이샤	다결정 실리콘 반응로 및 다결정 실리콘의 제조 방법
US8961689B2 (en) *	2008-03-26	2015-02-24	Gtat Corporation	Systems and methods for distributing gas in a chemical vapor deposition reactor
KR20100139092A (ko) *	2008-03-26	2010-12-31	지티 솔라 인코퍼레이티드	금-코팅된 폴리실리콘 반응기 시스템 및 방법
CA2721192A1 (en) *	2008-04-14	2009-10-22	Hemlock Semiconductor Corporation	Manufacturing apparatus for depositing a material and an electrode for use therein
EP2266368B1 (en) *	2008-04-14	2018-03-28	Hemlock Semiconductor Operations LLC	Manufacturing apparatus for depositing a material on an electrode for use therein
AU2009236679B2 (en) *	2008-04-14	2014-02-27	Hemlock Semiconductor Corporation	Manufacturing apparatus for depositing a material and an electrode for use therein
US11015244B2 (en)	2013-12-30	2021-05-25	Advanced Material Solutions, Llc	Radiation shielding for a CVD reactor
US10450649B2 (en)	2014-01-29	2019-10-22	Gtat Corporation	Reactor filament assembly with enhanced misalignment tolerance

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US410067A (en) *		1889-08-27		Process of facilitating chemical reactions
US1500789A (en) *	1920-06-17	1924-07-08	Aoyagi Eiji	Electrometallurgical process for manufacture of ductile bodies of high-fusing metals and alloys of same
US1829756A (en) *	1925-06-18	1931-11-03	Siemens Ag	Homogeneous body consisting of rhenium
US2441603A (en) *	1943-07-28	1948-05-18	Bell Telephone Labor Inc	Electrical translating materials and method of making them
NL130620C (it) *	1954-05-18	1900-01-01
US2750310A (en) *	1954-07-17	1956-06-12	Joachim I Franke	Manufacture process of doped germanium crystals
US2893850A (en) *	1956-08-03	1959-07-07	Bichowsky Foord Von	Apparatus for the production of elemental silicon

0
- NL NL238464D patent/NL238464A/xx unknown
- NL NL124690D patent/NL124690C/xx active
1958
- 1958-05-29 US US738821A patent/US3058812A/en not_active Expired - Lifetime
1959
- 1959-05-14 DE DEW25617A patent/DE1142347B/de active Pending
- 1959-05-14 DE DEW22052U patent/DE1885923U/de not_active Expired
- 1959-05-20 GB GB17138/59A patent/GB875622A/en not_active Expired
- 1959-05-21 CH CH7346259A patent/CH394136A/de unknown
- 1959-05-28 FR FR795886A patent/FR1225567A/fr not_active Expired

Also Published As

Publication number	Publication date
NL238464A (it)
DE1885923U (de)	1964-01-16
US3058812A (en)	1962-10-16
GB875622A (en)	1961-08-23
DE1142347B (de)	1963-01-17
FR1225567A (fr)	1960-07-01
CH394136A (de)	1965-06-30

Publication	Publication Date	Title
FR1193946A (it)	1959-11-05
FR1555451A (it)	1969-01-31
AT213446B (it)	1961-02-27
AT213908B (it)	1961-03-10
AT213316B (it)	1961-02-10
FR447M (it)	1961-04-24
AT215751B (it)	1961-06-26
JPS363447B1 (it)	1961-04-18
AT213472B (it)	1961-02-27
AT213558B (it)	1961-02-27
AT213557B (it)	1961-02-27
AT213337B (it)	1961-02-10
AT213631B (it)	1961-02-27
AT213670B (it)	1961-02-27
AT213313B (it)	1961-02-10
AT214270B (it)	1961-03-27
BE543812A (it)
NL238464A (it)
BE563683A (it)
BE543487A (it)
BE539571A (it)
BE538749A (it)
LU37616A1 (it)
LU38062A1 (it)
NL101399C (it)