NL113882C - - Google Patents

Info

Publication number
NL113882C
NL113882C NL113882DA NL113882C NL 113882 C NL113882 C NL 113882C NL 113882D A NL113882D A NL 113882DA NL 113882 C NL113882 C NL 113882C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL113882C publication Critical patent/NL113882C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
NL113882D 1952-06-13 NL113882C (US06811534-20041102-M00003.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US293330A US3005132A (en) 1952-06-13 1952-06-13 Transistors

Publications (1)

Publication Number Publication Date
NL113882C true NL113882C (US06811534-20041102-M00003.png)

Family

ID=23128645

Family Applications (2)

Application Number Title Priority Date Filing Date
NL113882D NL113882C (US06811534-20041102-M00003.png) 1952-06-13
NLAANVRAGE7711192,A NL179061C (nl) 1952-06-13 Werkwijze ter bereiding van een schuimmassa uit copolymeren van een aromatisch monovinylideen-monomeer en een ethenisch onverzadigd carbonzuuranhydride, alsmede de hieruit vervaardigde schuimvormige voorwerpen.

Family Applications After (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7711192,A NL179061C (nl) 1952-06-13 Werkwijze ter bereiding van een schuimmassa uit copolymeren van een aromatisch monovinylideen-monomeer en een ethenisch onverzadigd carbonzuuranhydride, alsmede de hieruit vervaardigde schuimvormige voorwerpen.

Country Status (6)

Country Link
US (1) US3005132A (US06811534-20041102-M00003.png)
BE (1) BE520597A (US06811534-20041102-M00003.png)
CH (1) CH320109A (US06811534-20041102-M00003.png)
FR (1) FR1080034A (US06811534-20041102-M00003.png)
GB (1) GB739294A (US06811534-20041102-M00003.png)
NL (2) NL179061C (US06811534-20041102-M00003.png)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB805292A (en) * 1953-12-02 1958-12-03 Philco Corp Semiconductor devices
GB780251A (en) * 1954-02-18 1957-07-31 Pye Ltd Improvements in or relating to junction transistors
US2778980A (en) * 1954-08-30 1957-01-22 Gen Electric High power junction semiconductor device
US3087098A (en) * 1954-10-05 1963-04-23 Motorola Inc Transistor
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2885608A (en) * 1954-12-03 1959-05-05 Philco Corp Semiconductive device and method of manufacture
US2762001A (en) * 1955-03-23 1956-09-04 Globe Union Inc Fused junction transistor assemblies
US2941131A (en) * 1955-05-13 1960-06-14 Philco Corp Semiconductive apparatus
US2927222A (en) * 1955-05-27 1960-03-01 Philco Corp Polarizing semiconductive apparatus
US2921362A (en) * 1955-06-27 1960-01-19 Honeywell Regulator Co Process for the production of semiconductor devices
BE555973A (US06811534-20041102-M00003.png) * 1956-03-21
US3091701A (en) * 1956-03-26 1963-05-28 Raytheon Co High frequency response transistors
NL106110C (US06811534-20041102-M00003.png) * 1956-08-24
US3047733A (en) * 1957-03-12 1962-07-31 Ibm Multiple output semiconductor logical device
US2981874A (en) * 1957-05-31 1961-04-25 Ibm High speed, high current transistor
US3087099A (en) * 1959-01-02 1963-04-23 Sprague Electric Co Narrow web mesa transistor structure
US3042565A (en) * 1959-01-02 1962-07-03 Sprague Electric Co Preparation of a moated mesa and related semiconducting devices
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
DE1208409B (de) * 1961-05-19 1966-01-05 Int Standard Electric Corp Elektrisches Halbleiterbauelement mit pn-UEbergang und Verfahren zum Herstellen
US3265943A (en) * 1962-08-03 1966-08-09 Sprague Electric Co Diffused collector transistor
US3716429A (en) * 1970-06-18 1973-02-13 Rca Corp Method of making semiconductor devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
US2563503A (en) * 1951-08-07 Transistor
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
NL84061C (US06811534-20041102-M00003.png) * 1948-06-26
US2691750A (en) * 1948-08-14 1954-10-12 Bell Telephone Labor Inc Semiconductor amplifier
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
BE495936A (US06811534-20041102-M00003.png) * 1949-10-11
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
GB728244A (en) * 1951-10-19 1955-04-13 Gen Electric Improvements in and relating to germanium photocells
BE537841A (US06811534-20041102-M00003.png) * 1954-05-03 1900-01-01
US2845374A (en) * 1955-05-23 1958-07-29 Texas Instruments Inc Semiconductor unit and method of making same

Also Published As

Publication number Publication date
FR1080034A (fr) 1954-12-06
GB739294A (en) 1955-10-26
CH320109A (de) 1957-03-15
NL179061C (nl)
US3005132A (en) 1961-10-17
BE520597A (US06811534-20041102-M00003.png)

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