NL113570C - - Google Patents

Info

Publication number
NL113570C
NL113570C NL113570DA NL113570C NL 113570 C NL113570 C NL 113570C NL 113570D A NL113570D A NL 113570DA NL 113570 C NL113570 C NL 113570C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL113570C publication Critical patent/NL113570C/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03CMODULATION
    • H03C7/00Modulating electromagnetic waves
    • H03C7/02Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas
    • H03C7/025Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas using semiconductor devices
    • H03C7/027Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas using semiconductor devices using diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02Varying the frequency of the oscillations by electronic means
    • H03B2201/0225Varying the frequency of the oscillations by electronic means the means being associated with an element comprising distributed inductances and capacitances
    • H03B2201/0241Varying the frequency of the oscillations by electronic means the means being associated with an element comprising distributed inductances and capacitances the element being a magnetically variable element, e.g. an Yttrium Iron Garnet

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measuring Fluid Pressure (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
NL113570D 1959-11-25 NL113570C (US20040242566A1-20041202-C00155.png)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US855426A US3063023A (en) 1959-11-25 1959-11-25 Modulated oscillator and low impedance diode construction therefor
US42894A US3145454A (en) 1959-11-25 1960-07-14 Fabrication of low impedance diode structures

Publications (1)

Publication Number Publication Date
NL113570C true NL113570C (US20040242566A1-20041202-C00155.png)

Family

ID=26719746

Family Applications (2)

Application Number Title Priority Date Filing Date
NL257516D NL257516A (US20040242566A1-20041202-C00155.png) 1959-11-25
NL113570D NL113570C (US20040242566A1-20041202-C00155.png) 1959-11-25

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL257516D NL257516A (US20040242566A1-20041202-C00155.png) 1959-11-25

Country Status (6)

Country Link
US (2) US3063023A (US20040242566A1-20041202-C00155.png)
CH (1) CH387177A (US20040242566A1-20041202-C00155.png)
DE (1) DE1439911A1 (US20040242566A1-20041202-C00155.png)
FR (1) FR1274197A (US20040242566A1-20041202-C00155.png)
GB (1) GB974493A (US20040242566A1-20041202-C00155.png)
NL (2) NL113570C (US20040242566A1-20041202-C00155.png)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL277811A (US20040242566A1-20041202-C00155.png) * 1961-04-27 1900-01-01
US3247718A (en) * 1963-02-01 1966-04-26 Pratt & Whitney Inc Digital output pressure transducer
DE1290260B (de) * 1963-09-30 1969-03-06 Siemens Ag Anordnung zur Verminderung der Eigeninduktivitaet und Zuleitungsinduktivitaet von Tunneldioden
US3343107A (en) * 1963-12-03 1967-09-19 Bell Telephone Labor Inc Semiconductor package
NL134170C (US20040242566A1-20041202-C00155.png) * 1963-12-17 1900-01-01
US3304469A (en) * 1964-03-03 1967-02-14 Rca Corp Field effect solid state device having a partially insulated electrode
US3274459A (en) * 1964-05-07 1966-09-20 Sterzer Fred Low impedance coupled transmission line and solid state tunnel diode structure
US3312879A (en) * 1964-07-29 1967-04-04 North American Aviation Inc Semiconductor structure including opposite conductivity segments
US3600648A (en) * 1965-04-21 1971-08-17 Sylvania Electric Prod Semiconductor electrical translating device
US3435377A (en) * 1966-03-04 1969-03-25 Gen Dynamics Corp Force-to-frequency transducer
US3579278A (en) * 1967-10-12 1971-05-18 Varian Associates Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor
DE1926989A1 (de) * 1969-05-27 1970-12-03 Beneking Prof Dr Rer Nat Heinz Hochfrequenzleitung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
US2829422A (en) * 1952-05-21 1958-04-08 Bell Telephone Labor Inc Methods of fabricating semiconductor signal translating devices
US2713132A (en) * 1952-10-14 1955-07-12 Int Standard Electric Corp Electric rectifying devices employing semiconductors
US2734154A (en) * 1953-07-27 1956-02-07 Semiconductor devices
US2879480A (en) * 1954-11-04 1959-03-24 Western Electric Co Frequency modulating transistor circuits
NL251064A (US20040242566A1-20041202-C00155.png) * 1955-11-04
US2852746A (en) * 1956-02-02 1958-09-16 Paul F Scheele Voltage-controlled transistor oscillator
US2842831A (en) * 1956-08-30 1958-07-15 Bell Telephone Labor Inc Manufacture of semiconductor devices
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure

Also Published As

Publication number Publication date
FR1274197A (fr) 1961-10-20
GB974493A (en) 1964-11-04
NL257516A (US20040242566A1-20041202-C00155.png)
US3063023A (en) 1962-11-06
DE1439911A1 (de) 1968-12-19
CH387177A (fr) 1965-01-31
US3145454A (en) 1964-08-25

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