NL113470C - - Google Patents

Info

Publication number
NL113470C
NL113470C NL113470DA NL113470C NL 113470 C NL113470 C NL 113470C NL 113470D A NL113470D A NL 113470DA NL 113470 C NL113470 C NL 113470C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL113470C publication Critical patent/NL113470C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
NL113470D 1957-06-25 NL113470C (US08197722-20120612-C00042.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US667916A US2870050A (en) 1957-06-25 1957-06-25 Semiconductor devices and methods of making same

Publications (1)

Publication Number Publication Date
NL113470C true NL113470C (US08197722-20120612-C00042.png)

Family

ID=24680195

Family Applications (2)

Application Number Title Priority Date Filing Date
NL113470D NL113470C (US08197722-20120612-C00042.png) 1957-06-25
NL228981D NL228981A (US08197722-20120612-C00042.png) 1957-06-25

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL228981D NL228981A (US08197722-20120612-C00042.png) 1957-06-25

Country Status (7)

Country Link
US (1) US2870050A (US08197722-20120612-C00042.png)
BE (1) BE568830A (US08197722-20120612-C00042.png)
CH (1) CH368240A (US08197722-20120612-C00042.png)
DE (1) DE1113034B (US08197722-20120612-C00042.png)
FR (1) FR1208571A (US08197722-20120612-C00042.png)
GB (1) GB832740A (US08197722-20120612-C00042.png)
NL (2) NL228981A (US08197722-20120612-C00042.png)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB945742A (US08197722-20120612-C00042.png) * 1959-02-06 Texas Instruments Inc
US3066053A (en) * 1960-02-01 1962-11-27 Sylvania Electric Prod Method for producing semiconductor devices
US3174112A (en) * 1960-07-29 1965-03-16 Westinghouse Electric Corp Semiconductor devices providing the functions of a plurality of conventional components
US3183130A (en) * 1962-01-22 1965-05-11 Motorola Inc Diffusion process and apparatus
US3658606A (en) * 1969-04-01 1972-04-25 Ibm Diffusion source and method of producing same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2071533A (en) * 1935-02-28 1937-02-23 Globe Steel Tubes Co Process of cementation
US2536774A (en) * 1946-03-07 1951-01-02 Diffusion Alloys Corp Process of coating ferrous metal and heat pack mixture therefor
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
US2622043A (en) * 1949-09-30 1952-12-16 Thompson Prod Inc Chromizing pack and method
US2727839A (en) * 1950-06-15 1955-12-20 Bell Telephone Labor Inc Method of producing semiconductive bodies
FR1077509A (fr) * 1951-04-20 1954-11-09 France Etat Procédé d'homogénéisation et d'activation de cristaux semi-conducteurs et de couches semi-conductrices
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
US2765245A (en) * 1952-08-22 1956-10-02 Gen Electric Method of making p-n junction semiconductor units
US2762705A (en) * 1953-01-23 1956-09-11 Int Nickel Co Addition agent and process for producing magnesium-containing cast iron
NL89732C (US08197722-20120612-C00042.png) * 1953-11-02
NL95386C (US08197722-20120612-C00042.png) * 1954-02-24
DE1215649B (de) * 1954-06-30 1966-05-05 Siemens Ag Verfahren zum Herstellen eines extrem reinen, stabfoermigen Halbleiterkristalls
US2759861A (en) * 1954-09-22 1956-08-21 Bell Telephone Labor Inc Process of making photoconductive compounds
NL100917C (US08197722-20120612-C00042.png) * 1955-11-05
NL210216A (US08197722-20120612-C00042.png) * 1955-12-02

Also Published As

Publication number Publication date
DE1113034B (de) 1961-08-24
GB832740A (en) 1960-04-13
US2870050A (en) 1959-01-20
NL228981A (US08197722-20120612-C00042.png)
FR1208571A (fr) 1960-02-24
BE568830A (US08197722-20120612-C00042.png)
CH368240A (de) 1963-03-31

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