NL113470C - - Google Patents
Info
- Publication number
- NL113470C NL113470C NL113470DA NL113470C NL 113470 C NL113470 C NL 113470C NL 113470D A NL113470D A NL 113470DA NL 113470 C NL113470 C NL 113470C
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US667916A US2870050A (en) | 1957-06-25 | 1957-06-25 | Semiconductor devices and methods of making same |
Publications (1)
Publication Number | Publication Date |
---|---|
NL113470C true NL113470C (US08197722-20120612-C00042.png) |
Family
ID=24680195
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL113470D NL113470C (US08197722-20120612-C00042.png) | 1957-06-25 | ||
NL228981D NL228981A (US08197722-20120612-C00042.png) | 1957-06-25 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL228981D NL228981A (US08197722-20120612-C00042.png) | 1957-06-25 |
Country Status (7)
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB945742A (US08197722-20120612-C00042.png) * | 1959-02-06 | Texas Instruments Inc | ||
US3066053A (en) * | 1960-02-01 | 1962-11-27 | Sylvania Electric Prod | Method for producing semiconductor devices |
US3174112A (en) * | 1960-07-29 | 1965-03-16 | Westinghouse Electric Corp | Semiconductor devices providing the functions of a plurality of conventional components |
US3183130A (en) * | 1962-01-22 | 1965-05-11 | Motorola Inc | Diffusion process and apparatus |
US3658606A (en) * | 1969-04-01 | 1972-04-25 | Ibm | Diffusion source and method of producing same |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2071533A (en) * | 1935-02-28 | 1937-02-23 | Globe Steel Tubes Co | Process of cementation |
US2536774A (en) * | 1946-03-07 | 1951-01-02 | Diffusion Alloys Corp | Process of coating ferrous metal and heat pack mixture therefor |
US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
US2622043A (en) * | 1949-09-30 | 1952-12-16 | Thompson Prod Inc | Chromizing pack and method |
US2727839A (en) * | 1950-06-15 | 1955-12-20 | Bell Telephone Labor Inc | Method of producing semiconductive bodies |
FR1077509A (fr) * | 1951-04-20 | 1954-11-09 | France Etat | Procédé d'homogénéisation et d'activation de cristaux semi-conducteurs et de couches semi-conductrices |
US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
US2742383A (en) * | 1952-08-09 | 1956-04-17 | Hughes Aircraft Co | Germanium junction-type semiconductor devices |
US2765245A (en) * | 1952-08-22 | 1956-10-02 | Gen Electric | Method of making p-n junction semiconductor units |
US2762705A (en) * | 1953-01-23 | 1956-09-11 | Int Nickel Co | Addition agent and process for producing magnesium-containing cast iron |
NL89732C (US08197722-20120612-C00042.png) * | 1953-11-02 | |||
NL95386C (US08197722-20120612-C00042.png) * | 1954-02-24 | |||
DE1215649B (de) * | 1954-06-30 | 1966-05-05 | Siemens Ag | Verfahren zum Herstellen eines extrem reinen, stabfoermigen Halbleiterkristalls |
US2759861A (en) * | 1954-09-22 | 1956-08-21 | Bell Telephone Labor Inc | Process of making photoconductive compounds |
NL100917C (US08197722-20120612-C00042.png) * | 1955-11-05 | |||
NL210216A (US08197722-20120612-C00042.png) * | 1955-12-02 |
-
0
- NL NL113470D patent/NL113470C/xx active
- BE BE568830D patent/BE568830A/xx unknown
- NL NL228981D patent/NL228981A/xx unknown
-
1957
- 1957-06-25 US US667916A patent/US2870050A/en not_active Expired - Lifetime
-
1958
- 1958-05-28 GB GB17073/58A patent/GB832740A/en not_active Expired
- 1958-06-19 DE DER23520A patent/DE1113034B/de active Pending
- 1958-06-23 FR FR1208571D patent/FR1208571A/fr not_active Expired
- 1958-06-24 CH CH6098358A patent/CH368240A/de unknown
Also Published As
Publication number | Publication date |
---|---|
DE1113034B (de) | 1961-08-24 |
GB832740A (en) | 1960-04-13 |
US2870050A (en) | 1959-01-20 |
NL228981A (US08197722-20120612-C00042.png) | |
FR1208571A (fr) | 1960-02-24 |
BE568830A (US08197722-20120612-C00042.png) | |
CH368240A (de) | 1963-03-31 |