NL113333C - - Google Patents

Info

Publication number
NL113333C
NL113333C NL113333DA NL113333C NL 113333 C NL113333 C NL 113333C NL 113333D A NL113333D A NL 113333DA NL 113333 C NL113333 C NL 113333C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL113333C publication Critical patent/NL113333C/xx

Links

Classifications

    • H10W99/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P95/00
NL113333D 1957-09-19 NL113333C (en:Method)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES55170A DE1064153B (de) 1957-09-19 1957-09-19 Verfahren zur Herstellung eines einseitig hochdotierten pn-UEbergangs fuer Emitterzonen durch Einlegieren von Aluminium und einem weiteren benetzenden Metall in einen Germaniumeinkristall
DES59300A DE1114592B (de) 1957-09-19 1958-08-06 Verfahren zur Herstellung von Halbleiteranordnungen mit einem Halbleiterkoerper und mindestens einer einlegierten, teilweise aus Aluminium bestehenden Elektrode

Publications (1)

Publication Number Publication Date
NL113333C true NL113333C (en:Method)

Family

ID=25995433

Family Applications (2)

Application Number Title Priority Date Filing Date
NL113333D NL113333C (en:Method) 1957-09-19
NL6604302A NL6604302A (en:Method) 1957-09-19 1966-03-31

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL6604302A NL6604302A (en:Method) 1957-09-19 1966-03-31

Country Status (6)

Country Link
US (1) US2992947A (en:Method)
CH (1) CH364845A (en:Method)
DE (2) DE1064153B (en:Method)
FR (1) FR1202656A (en:Method)
GB (1) GB851978A (en:Method)
NL (2) NL6604302A (en:Method)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL230165A (en:Method) * 1958-08-01 1900-01-01
DE1127481B (de) * 1959-09-04 1962-04-12 Bosch Gmbh Robert Leistungsgleichrichter mit einem Halbleiterkoerper aus mit Antimon dotiertem Germanium und Verfahren zu seiner Herstellung
US3211595A (en) * 1959-11-02 1965-10-12 Hughes Aircraft Co P-type alloy bonding of semiconductors using a boron-gold alloy
US3239376A (en) * 1962-06-29 1966-03-08 Bell Telephone Labor Inc Electrodes to semiconductor wafers
US3219497A (en) * 1962-11-29 1965-11-23 Paul E V Shannon Process of fabricating p-n junctions for tunnel diodes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2023498A (en) * 1932-07-21 1935-12-10 Dow Chemical Co Method of producing composite wrought forms of magnesium alloys
NL92060C (en:Method) * 1953-10-26
NL207910A (en:Method) * 1955-06-20
US2835615A (en) * 1956-01-23 1958-05-20 Clevite Corp Method of producing a semiconductor alloy junction
US2862840A (en) * 1956-09-26 1958-12-02 Gen Electric Semiconductor devices

Also Published As

Publication number Publication date
DE1064153B (de) 1959-08-27
DE1114592B (de) 1961-10-05
CH364845A (de) 1962-10-15
FR1202656A (fr) 1960-01-12
US2992947A (en) 1961-07-18
GB851978A (en) 1960-10-19
NL6604302A (en:Method) 1966-07-25

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