NL110970C - - Google Patents

Info

Publication number
NL110970C
NL110970C NL110970DA NL110970C NL 110970 C NL110970 C NL 110970C NL 110970D A NL110970D A NL 110970DA NL 110970 C NL110970 C NL 110970C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL110970C publication Critical patent/NL110970C/xx
Priority claimed from GB2991654A external-priority patent/GB820611A/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/26—Circuits for superheterodyne receivers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/04—Homogenisation by zone-levelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D5/00—Circuits for demodulating amplitude-modulated or angle-modulated oscillations at will
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J5/00—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner
    • H03J5/24—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection
    • H03J5/242—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection used exclusively for band selection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
NL110970D 1954-10-18 NL110970C (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2991654A GB820611A (en) 1954-10-18 1954-10-18 Improvements in or relating to semi-conductor diodes
GB12698/56A GB839842A (en) 1954-10-18 1956-04-25 Improvements in or relating to semi-conductor diodes

Publications (1)

Publication Number Publication Date
NL110970C true NL110970C (ko)

Family

ID=26249205

Family Applications (3)

Application Number Title Priority Date Filing Date
NL201235D NL201235A (ko) 1954-10-18
NL216619D NL216619A (ko) 1954-10-18
NL110970D NL110970C (ko) 1954-10-18

Family Applications Before (2)

Application Number Title Priority Date Filing Date
NL201235D NL201235A (ko) 1954-10-18
NL216619D NL216619A (ko) 1954-10-18

Country Status (5)

Country Link
US (1) US2849664A (ko)
BE (1) BE556951A (ko)
DE (1) DE1011082B (ko)
GB (1) GB839842A (ko)
NL (3) NL110970C (ko)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3032695A (en) * 1957-03-20 1962-05-01 Bosch Gmbh Robert Alloyed junction semiconductive device
DE1093018B (de) * 1957-08-03 1960-11-17 Licentia Gmbh Trockengleichrichterelement und aus mehreren dieser Trockengleichrichterelemente hergestellte Trockengleichrichtersaeule
US2975342A (en) * 1957-08-16 1961-03-14 Research Corp Narrow base planar junction punch-thru diode
NL237225A (ko) * 1958-03-19
US3109938A (en) * 1958-03-19 1963-11-05 Rauland Corp Semi-conductor device having a gas-discharge type switching characteristic
US3109221A (en) * 1958-08-19 1963-11-05 Clevite Corp Semiconductor device
US2992471A (en) * 1958-11-04 1961-07-18 Bell Telephone Labor Inc Formation of p-n junctions in p-type semiconductors
US3085310A (en) * 1958-12-12 1963-04-16 Ibm Semiconductor device
US3219890A (en) * 1959-02-25 1965-11-23 Transitron Electronic Corp Semiconductor barrier-layer device and terminal structure thereon
NL249774A (ko) * 1959-03-26
US3134159A (en) * 1959-03-26 1964-05-26 Sprague Electric Co Method for producing an out-diffused graded-base transistor
NL113632C (ko) * 1959-04-08
NL264084A (ko) * 1959-06-23
US3108914A (en) * 1959-06-30 1963-10-29 Fairchild Camera Instr Co Transistor manufacturing process
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3124862A (en) * 1959-12-14 1964-03-17 Alloy double-diffused semiconductor
DE1113519B (de) * 1960-02-25 1961-09-07 Bosch Gmbh Robert Siliziumgleichrichter fuer hohe Stromstaerken
DE1171537B (de) * 1960-04-02 1964-06-04 Telefunken Patent Verfahren zur Herstellung einer Halbleiterdiode
US3186065A (en) * 1960-06-10 1965-06-01 Sylvania Electric Prod Semiconductor device and method of manufacture
US3099776A (en) * 1960-06-10 1963-07-30 Texas Instruments Inc Indium antimonide transistor
DE1295089B (de) * 1960-12-23 1969-05-14 Philips Patentverwaltung Verfahren zum Herstellen einer Halbleiteranordnung, insbesondere eines Transistors
DE1239778B (de) * 1963-11-16 1967-05-03 Siemens Ag Schaltbares Halbleiterbauelement von pnpn-Typ
NL6512513A (ko) * 1964-12-01 1966-06-02
DE19531369A1 (de) * 1995-08-25 1997-02-27 Siemens Ag Halbleiterbauelement auf Siliciumbasis mit hochsperrendem Randabschluß

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2646536A (en) * 1946-11-14 1953-07-21 Purdue Research Foundation Rectifier
BE511293A (ko) * 1951-08-24

Also Published As

Publication number Publication date
US2849664A (en) 1958-08-26
BE556951A (ko)
NL201235A (ko)
GB839842A (en) 1960-06-29
DE1011082B (de) 1957-06-27
NL216619A (ko)

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