NL1037191A

NL1037191A - SEMICONDUCTOR TUNNEL INSTALLATION, INCLUDING MULTIPLE DEVICES FOR THE PURPOSE OF PROCESSING A (SUB) NANOMETER HIGH LAYER OF PARTICLES OF A FIXED SUBSTANCE ON THE FOLLOWING, UNINTERRUPTED, SEVERAL SACRED.

Info

Publication number: NL1037191A
Application number: NL1037191A
Authority: NL
Inventors: Edward Bok
Original assignee: Edward Bok
Priority date: 2009-08-11
Filing date: 2009-08-11
Publication date: 2011-02-14
Also published as: NL1037191C2

Description

Semiconductor tunnel—opstelling, bevattende meerdere inrichtingen ten behoeve van het daarmede bewerkstelligen van een (sub) nanometer hoge laag van deeltjes van een vaste substantie op de opvolgende, ononderbroken erdoorheen verplaatsende semiconductor substraat-gedeeltes.Semiconductor tunnel arrangement, comprising a plurality of devices for thereby effecting a (sub) nanometer-high layer of particles of a solid substance on the subsequent, continuously moving semiconductor substrate portions therethrough.

De semiconductor substraat transfer/behandelings-tunnelopstelling volgens de uitvinding bevat mede typisch een aantal stripvormige medium-toevoer inrichtingen, welke in hoofdzaak zijn opgenomen in het boventunnelblok ervan ten behoeve van het tijdens de werking ervan daarin ononderbroken toevoeren van de combinatie van vloeibaar draagmedium en deeltjes van een vaste semiconductor substantie, waarbij daarin tevens typisch de opname van een tweetal opvolgende meng-inrichtingen ten behoeve van in de eerste meng-inrichting ervan het mengen van een hoog percentage van een vloeibaar draagmedium met tenminste mede zulk een substantie en in de tweede daarop-volgende , typisch er onder-gelegen meng-inrichting, het mengen van deze combinatie met wederom een hoog percentage vloeibaar draagmedium plaats vindt.The semiconductor substrate transfer / treatment tunnel arrangement according to the invention also typically comprises a number of strip-shaped medium supply devices, which are mainly included in its upper tunnel block for the purpose of continuously supplying the combination of liquid carrier medium and particles therein during its operation therein of a solid semiconductor substance, wherein there is also typically included therein two successive mixing devices for mixing in the first mixing device a high percentage of a liquid carrier medium with at least partly such a substance and in the second one thereafter the next mixing device, which is typically located below it, the mixing of this combination with again a high percentage of liquid carrier medium takes place.

In de gelijktijdig door de aanvrager ingediende Nederlandse Octrooi-aanvrage voor zulk een semiconductor tunnel-opstelling is reeds zulk een stripvormige medium-toevoer-inrichting aangegeven ten behoeve van de ononderbroken toevoer erdoorheen van de combinatie van typisch laag-kokend vloeibaar draagmedium en deeltjes van een semiconductor substantie in een vloeibare of vaste vorm ervan.In the Dutch Patent Application for such a semiconductor tunnel arrangement simultaneously submitted by the applicant, such a strip-shaped medium-supply device has already been indicated for the continuous supply therethrough of the combination of typical low-boiling liquid carrier medium and particles of a semiconductor substance in a liquid or solid form thereof.

Bij een breedte van de tunnel-door gang van circa 200 mm en een verplaatsings-snelheid van de opvolgende, zich erdoorheen verplaatsende semiconductor substraat-gedeeltes van typisch slechts 2 mm per seconde en zulks in combinatie met typisch een minder dan 500 nanometer hoge op te bouwen laag van zulk een vloeibare hecht-substantie is aldus het ononderbroken toegevoerde volume ervan beperkt tot typisch minder dan 0,2 mm3 per seconde.With a width of the tunnel passage of about 200 mm and a speed of movement of the subsequent semiconductor substrate portions moving through it, typically only 2 mm per second and this in combination with typically less than 500 nanometers high. Thus, a layer of such a liquid adhesive substance has its continuously supplied volume limited to typically less than 0.2 mm 3 per second.

Hierdoor is een zeer hoog percentage van dit vloeibare draagmedium gewenst, met typisch een meng-verhouding van circa 2500 : 1 en waarbij dan een ononderbroken toevoer erdoorheen van circa 500 mm3 per seconde van zulk een combinatie plaats vindt.As a result, a very high percentage of this liquid carrier medium is desired, with a mixing ratio of approximately 2500: 1 and in which case a continuous supply therethrough of approximately 500 mm 3 per second of such a combination takes place.

Aldus vindt nu met behulp van deze tweetal aanvullende meng-inrichtingen in zulk een stripvormige medium-toevoerinrichting een voldoende verdunning van deze vloeibare hecht-substantie plaats.Thus, with the aid of these two additional mixing devices, a sufficient dilution of this liquid adhesive substance takes place in such a strip-shaped medium feed device.

Daarbij onder de daarop-volgende, in het boventunnelblok opgenomen stripvormige tril/verdampings-inrichting door verdamping van het laag-kokende vloeibare draagmedium de vorming van de combinatie van dampvormig medium en deeltjes van deze vaste substantie onder de neerslag ervan op de boven-topography van de opvolgende eronderlangs verplaatsende semiconductor substraat-gedeeltes en zulks mede onder tril-conditie van deze tril/verdampings-inrichting.The formation of the combination of vaporous medium and particles of this solid substance below the subsequent strip-shaped vibrator / evaporator device included in the upper tunnel block by means of evaporation of the low-boiling liquid carrier medium on top of the topography of the successive semiconductor substrate sections moving underneath it and this also under the vibrating condition of this vibrating / evaporating device.

Aldus een optimaal semiconductor neerslag-proces met behulp van deze combinatie van deeltjes van deze vaste substantie en zulk een zeer hoog percentage van het verdampbare vloeibare draagmedium.Thus an optimum semiconductor precipitation process using this combination of particles of this solid substance and such a very high percentage of the evaporable liquid carrier medium.

Daarbij vindt tevens een uiterst snelle verdamping van dit laag-kokende vloeibare draagmedium in de onder deze tril/ verdampings -inrichting gelegen bovenspleet-sectie plaats, met daardoor slechts een geringe benodigde breedte van zulk een inrichting in de lengte-richting van deze tunnel, typisch minder dan 50 mm, en waar bij een ononderbroken afvoer van deze gevormde damp in de daarop-volgende stripvormige af voer-inrichting in het boventunnelblok.An extremely rapid evaporation of this low-boiling liquid carrier medium also takes place in the upper slit section below this vibrating / evaporating device, with as a result only a small required width of such a device in the longitudinal direction of this tunnel, typically less than 50 mm, and where there is an uninterrupted discharge of this formed vapor in the subsequent strip-shaped discharge device in the upper tunnel block.

Als een uiterst gunstige tril/verwarmings-inrichting daar bij typisch de toepassing van een stripvormige transducer-opstelling, welke is opgenomen in het boventunnelblok onmiddellijk achter deze medium-toevoerinrichting.As an extremely favorable vibration / heating device there is typically the use of a strip-shaped transducer arrangement which is incorporated in the upper tunnel block immediately behind this medium supply device.

Daarbij in een gunstige tr il-conditie ervan het tevens onderhouden van de combinatie van een snelle neerwaartse -en een daarop-volgende langzame opwaartse verplaatsing van deze trillingen ten behoeve van het bijdragen in zulk een optimaal neerslag-proces.Thereby, in a favorable tri-condition thereof, also maintaining the combination of a rapid downward and a subsequent slow upward displacement of these vibrations for the purpose of contributing to such an optimum precipitation process.

In een volgende gunstige werkwijze het in deze medium-toevoer inrichting tevens toepassen van een hoog-kokend vloeibaar draagmedium, waarbij dan typisch in dit boventunnelblok de opname van een tweede stripvormige tril/ verdampings-inrichting achter deze eerste combinatie van een tri1/verdampings-inrichting en medium-afvoer inrichting en waarin dan het ononderbroken plaatsvinden van verdamping van dit hoger-kokende vloeibare draagmedium.In a further favorable method, also using a high-boiling liquid carrier medium in this medium-supply device, wherein in this upper tunnel block typically the accommodation of a second strip-shaped vibrator / evaporator is behind this first combination of a tri1 / evaporator. and medium discharge device and in which then the continuous occurrence of evaporation of this higher-boiling liquid carrier medium takes place.

Tevens vindt mogelijk typisch mede een zeer beperkte ongunstige neerslag van zulke deeltjes van deze Jba.ste_ substantie tegen tenminste het onderwand-gedeelte van deze inrichting plaats, waardoor dan tevens .mogelijk een neerslag op deze onderwand zich uitstrekt tot deze daaropvolgende stripvormige afvoer-inrichting, welke eveneens is opgenomen in het boventunnelblok.It is also possible that a very limited, unfavorable precipitation of such particles of this Jba.stastic substance at least takes place against at least the bottom wall part of this device, as a result of which possibly also a precipitation on this bottom wall extends to this subsequent strip-shaped discharge device. which is also included in the upper tunnel block.

In een gunstige uitvoering van deze tunnel-opstelling vindt daarbij daartoe in een daarop-volgende stripvormige toevoer-inrichting de ononderbroken toevoer van vloeibaar reinigings-medium naar deze afvoer-inrichting plaats ten behoeve van het daarin mede afvoeren vandez.e deeltjes vaste substantie op waarbij typisch daarachter de opname van een stripvormige inrichting voor typisch gasvormig slot-medium, waardoor daarachter een schoon onderwand-gedeelte van dit boventunnelblok wordt onderhouden.In a favorable embodiment of this tunnel arrangement, the continuous supply of liquid cleaning medium to this discharge device takes place for this purpose in a subsequent strip-shaped supply device for the purpose of co-discharging said particles of solid substance, typically behind it the inclusion of a strip-shaped device for typical gaseous lock medium, thereby maintaining a clean bottom wall portion of this upper tunnel block.

Indien benodigd ten behoeve van de bewerkstelliging van een ultra gelijkmatige hoogte van zulk een bewerkstelligde laag van de vaste substantie, in dit boventunnelblok achter deze tweede af voer-inrichting de opname van nog een derde stripvormige tril-inrichting.If required for the purpose of achieving an ultra-uniform height of such an effected layer of the solid substance, the inclusion of another third strip-shaped vibrator in this upper tunnel block behind this second discharge device.

De totale lengte van zulk een tunnel-gedeelte, waarin het opbrengen van zulk een nanometer hoge laag van deeltjes, inclusief zelfs een drietal tril/verwarmings-inrichtingea, bedraagt daarbij typisch toch nog minder dan 70 cm.The total length of such a tunnel section, in which the application of such a nanometer-high layer of particles, including even three vibrating / heating devices, is typically still less than 70 cm.

In een gunsige semiconductor werkwijze vindt in tenminste één opwekinrichting boven deze tunnel-opstelling de bewerkstelliging van ionen als nanometer grote deeltjes van een vaste substantie, welke reeds algemeen worden toegepast in de bestaande semiconductor installaties onder de gebruikmaking van wafers, plaats en waarbij in een eronder gelegen meng-inrichting de opname van deze ionen in typisch laag-kokend vloeibaar draagmedium met een hoger percentage ervan plaats.In a favorable semiconductor process, in at least one generating device above this tunnel arrangement, the realization of ions as nanometer-sized particles of a solid substance, which are already commonly used in existing semiconductor installations using wafers, takes place and in which there is an underneath In a mixing device, the incorporation of these ions into typically low-boiling liquid carrier medium with a higher percentage thereof.

Daarbij vindt via tenminste één toevoer leiding de ononderbroken toevoer ervan naar de eerste meng-inrichting van deze medium-toevoerinrichting plaats ten behoeve van de menging ervan met een hoog percentage typisch gelijksoortig vloeibaar draagmedium en met afvoer van deze gemengde substantie naar de daarop-volgende, eronder gelegen tweede meng-inrichting en waarin de menging van deze combinatie plaats vindt in wederom een hoog percentage van typisch eveneens hetzelfde laag-kokende vloeibare draagmedium geschiedt, met vervolgens afvoer van deze gemengde combinatie via een aantal kanalen naar het stripvormige toevoer-gedeelte in de onderwand van deze stripvormige toevoer-inrichting.The continuous supply thereof takes place via at least one supply line to the first mixing device of this medium supply device for the purpose of mixing it with a high percentage of typically similar liquid carrier medium and with discharge of this mixed substance to the subsequent, second mixing device located below it and in which the mixing of this combination takes place in a high percentage of the same low-boiling liquid carrier medium again, with subsequent discharge of this mixed combination via a number of channels to the strip-shaped feed section in the bottom wall of this strip-shaped feed device.

Daarbij vervolgens in het bovenspleet-gedeelte onder zulk een trillende transducer, welke tevens fungeert als een voldoende warmte—bron, de bewerkstelliging van een dampvormig draagmedium voor deze ionen onder een optimale inwerking ervan op de boventopography van de opvolgende, eronderlangs verplaatsende semiconductor substraat-gedeeltes, zoals onder andere het daarmede plaatsvinden van een implantage/ doping-proces met behulp van deze ionenNext, in the upper slit portion below such a vibrating transducer, which also acts as a sufficient heat source, the creation of a vaporous carrier medium for these ions while optimally acting on the upper topography of the subsequent semiconductor substrate portions moving underneath it , such as, among other things, the implementation of an implantation / doping process with the aid of these ions

Tevens in een ander proces het geledelijk vullen met deze ionen van de in een voorgaand tunnel-gedeelte bewerkstelligde nanometer brede uitsparingen (crevices).Also in another process the filling of these ions of the nanometer wide recesses (crevices) realized in a previous tunnel section with these ions.

Mede ten behoeve van een optimaal semiconductor behandelings-proces daartoe voor deze transducer-trillingen een snelle neerwaartse en een daarop-volgende langzame opwaartse verplaatsing van de onder-trilwand ervan ten behoeve van het optimaal indringen van deze ionen.Partly for the purpose of an optimum semiconductor treatment process for this transducer vibration, a rapid downward and a subsequent slow upward movement of its lower vibrating wall for the purpose of optimally penetrating these ions.

Indien benodigd, in opvolgende tunnel-gedeeltes het plaatsvinden van een aantal herhalingen van zulke semiconductor behandelingen.If required, the occurrence of a number of repetitions of such semiconductor treatments in subsequent tunnel sections.

Verder- is deze tunnel-opstelling zodanig uitgevoerd en bevattende zodanige middelen, dat daarbij daarin tevens de mogelijke toepassing van meerdere van de middelen en werkwijzen van de semiconductor faciliteit, - installatie, - tunnel-opstellingen en - inrichtingen, welke door de aanvrager zijn aangegeven en omchreven in de door hem recent ingediende Nederlandse Octrooi-aanvragen betreffende zulk een semiconductor tunnel-opstelling.Furthermore, this tunnel arrangement is designed and contains such means that it also includes the possible application of several of the means and methods of the semiconductor facility, installation, tunnel arrangements and devices indicated by the applicant. and described in the Dutch Patent Applications recently submitted by him concerning such a semiconductor tunnel arrangement.

veraei is aeze tunnel-opstelling zodanig uitgevoerd en bevattende zodanige middelen, dat daarbij daarin mogelijk de toepassing van alle reeds algemeen gebruikt wordende semiconductor behandelingen voor wafers in semiconductor modules, ook welke reeds zijn omschreven in Octrooien, indien daarin de vermelding in de tekst en Conclusies van het navolgende: a) een individuele semiconductor wafer of - substraat; of b) een al dan niet individuele semiconductor processing-module .In addition, this tunnel arrangement has been designed and includes such means that it may include the use of all semiconductor treatments that are already generally used for wafers in semiconductor modules, including those already described in Patents, if the mention thereof in the text and Conclusions of the following: a) an individual semiconductor wafer or substrate; or b) an individual or non-individual semiconductor processing module.

Verder is deze tunnel-opstelling zodanig uitgevoerd en bevattende zodanige middelen, dat daarbij de in deze Octrooiaanvrage omschreven middelen en werkwijzen tevens toepasbaar zijn in deze boven-vermelde semiconductor tunnel-opstellingen.Furthermore, this tunnel arrangement is designed and contains such means that the means and methods described in this Patent Application can also be used in these semiconductor tunnel arrangements mentioned above.

De uitvinding zal hieronder nader worden uiteengezet aan de hand van de in de Figuren weergegeven uitvoerings-voorbeelden van de constructies volgens de uitvinding.The invention will be explained in more detail below with reference to the exemplary embodiments of the constructions according to the invention shown in the Figures.

Figuur 1 toont wederom de in de Figuur 1 van deze eerste aanvage aangegeven semiconductor tunnel-opstelling, met daarin een stripvormige medium-toevoer inrichting, waarin het plaatsvinden van een ononderbroken toevoer van de combinatie van vloeibaar draagmedium en deeltjes van de nanometer grote deeltjes substantie in een vaste vorm ervan en waarbij daarin in het bovenste gedeelte ervan de opname van een eerste typisch cilindrische meng-inrichting ten behoeve van het daarin mengen van een laag percentage van tenminste mede zulk een semiconductor substantie met een typisch hoger percentage vloeibaar draagmedium en waarbij deze meng-inr ichting aan de onderzijde ervan via typisch een aantal naast elkaar gelegen medium-toevoer kanalen is aangesloten op een tweede, eveneens typisch cilindrische meng-inrichting, met daarin eveneens de toevoer van een aanzienlijk hoger percentage van typisch hetzelfde vloeibare draagmedium ten behoeve van het in benedenwaartse richting afvoeren van deze combinatie van dit draagmedium en zulke deeltjes van een semiconductor substantie naar het eronder-gelegen stripvormige toevoer-gedeelte van de bovenspleet boven de ononderbroken erdoorheen verplaatsende semiconductor substraat-gedeeltes.Figure 1 again shows the semiconductor tunnel arrangement shown in Figure 1 of this first claim, with a strip-shaped medium-supply device therein, in which the uninterrupted supply of the combination of liquid carrier medium and particles of the nanometer-large particle substance into a solid form thereof and wherein therein accommodates in the upper part thereof a first typically cylindrical mixing device for mixing therein a low percentage of at least partly such a semiconductor substance with a typically higher percentage of liquid carrier medium and wherein said mixing device on its underside is connected via a number of adjacent medium-supply channels to a second, also typically cylindrical mixing device, which also contains therein the supply of a considerably higher percentage of typically the same liquid carrier medium for the purpose of discharge this comb downwards introduction of this carrier medium and such particles from a semiconductor substance to the underlying strip-shaped feed portion of the upper slit above the continuous semiconductor substrate portions moving therethrough.

Figuur 2 toont in deze tunnel-opstelling achter deze medium-toevoerinrichting een in het boventunnelblok opgenomen uitwisselbare stripvormige transducer-opstelling, waarbij in het compartiment ervan de opname van een transducer ten behoeve van typisch het daarmede verdampen van het laag-kokende vloeibare draagmedium onder neerslag van de deeltjes semiconductor substantie op de opvolgende, ononderbroken eronderlangs verplaatsende semiconductor substraat-gedeeltes en waarbij via het erboven gelegen bovenspleet-gedeelte met een toenemende hoogte ervan afvoer van het gevormde dampvormige medium naar de daarop-volgende stripvormige afvoer-inrichting, welke eveneens is opgenomen in dit boventunnelblok.Figure 2 shows in this tunnel arrangement behind this medium supply device an interchangeable strip-shaped transducer arrangement included in the upper tunnel block, wherein in its compartment the accommodation of a transducer for the purpose of thereby evaporating the low-boiling liquid carrier medium under precipitation of the particulate semiconductor substance on the successive, continuously moving semiconductor substrate portions therebetween and wherein via the supernatant slit portion with an increasing height thereof discharge of the formed vaporous medium to the subsequent strip-shaped discharge device, which is also included in this upper tunnel block.

Daarbij dus typisch uitsluitend de toepassing van laag-kokend vloeibaar draagmedium.Thereby, therefore, typically only the use of low-boiling liquid carrier medium.

Figuren 2^ t,/in ^ tonen zeer sterk vergroot de opvolgende phasen van het neerslag-proces van deze deeltjes vaste substantie op de opvolgende, ononderbroken eronderlangs verplaatsende semiconductor substraat-gedeeltes.Figs. 2 to 3 greatly increase the successive phases of the deposition process of these solid substance particles on the successive, continuously moving semiconductor substrate sections underneath it.

Figuren 2E> F en G tonen zeer sterk vergroot de neerslag van deze deeltjes vaste substantie op een metalen di-electrische - en kunststof-onder laag.Figures 2E> F and G show a very strong increase in the precipitation of these particles of solid substance on a metal, dielectric and plastic layer.

Figuur 3 toont achter deze transducer-opstelling een stripvormige toevoer-inrichting voor reinigingsmedium, met afvoer ervan via deze afvoer-inrichting ten behoeve van het gereinigd houden van tenminste het tussen-gelegen onderwand-gedeelte van het boventunnelblok.Figure 3 shows behind this transducer arrangement a strip-shaped supply device for cleaning medium, with discharge thereof via this discharge device for the purpose of keeping at least the intermediate lower wall part of the upper tunnel block clean.

Figuur 4 toont achter de in de Figuur 2 mede aangegeven eerste transducer-opstelling een tweede transducer-opstelling ten behoeve van het typisch met behulp van het trillen ervan het plaatsvinden van een egalisatie-proces van. deze opgebrachte laag van zulke deeltjes van een vaste substantie, zoals sterk vergroot is aangegeven in de Figuur 4a.Figure 4 shows behind the first transducer arrangement also shown in Figure 2 a second transducer arrangement for the purpose of typically using an oscillation to effect an equalization process of. this applied layer of such particles of a solid substance, as greatly enlarged is indicated in Figure 4a.

Daarachter wederom zulk een stripvormige afvoergroef voor tenminste mede nog verdampt vloeibaar draagmedium en daarachter wederom zulk een stripvormige toevoergroef voor reinigings—medium en een daarop-volgende stripvormige toevoergroef voor gasvormig slotmedium.Behind it again such a strip-shaped discharge groove for at least co-evaporated liquid carrier medium and again behind such a strip-shaped feed groove for cleaning medium and a subsequent strip-shaped feed groove for gaseous lock medium.

Figuur 5 toont als alternatief voor zulk een stripvormige transducer-opste1ling de opname in het boventunnelblok van een stripvormige roterende nokkenas-opstelling onder het daarbij tijdens de werking ervan onderhouden van typisch een snelle neerwaartse verplaatsing en een daarop-volgende langzame opwaartse verplaatsing van het stripvormige drukwand-gedeelte ervan ten behoeve van het eveneens bewerkstelligen van een optimaal vlakke conditie van de neergeslagen deeltjes van zulk een vaste semiconductor substantie.Fig. 5 shows, as an alternative to such a strip-shaped transducer arrangement, the incorporation into the upper tunnel block of a strip-shaped rotating camshaft arrangement while maintaining typically a rapid downward displacement and a subsequent slow upward displacement of the strip-shaped pressure wall during its operation. part thereof for the purpose of also achieving an optimum flat condition of the precipitated particles of such a solid semiconductor substance.

Daarbij in dit dr ukwand-gedeelte de opname van een dunwandige stripvormige electrische verwarmings-inrichting ten behoeve van het daarmede tevens verdampen van het toegevoerde laag-kokende vloeibare draagmedium en het daaronder steeds verder plaatsvinden van zulk een neerslag-proces van deze deeltjes van een vaste semiconductor substantie, zoals sterk vergroot is aangegeven in de Figuren 5A t/m D) onder het tenslotte opgebouwd zijn van een typisch nanometer hoge laag van deze deeltjes op de opvolgende, eronderlangs verplaatsende semiconductor substraat-gedeeltes, zoals is aangegeven in de Figuur 5®,The inclusion of a thin-walled strip-shaped electric heating device for the purpose of thereby also evaporating the supplied low-boiling liquid carrier medium and the continuous occurrence of such a precipitation process of these particles of a solid semiconductor substance, as strongly enlarged is indicated in Figures 5A to D), finally being built up of a typical nanometer-high layer of these particles on the subsequent, semiconductor substrate portions moving along it, as indicated in Figure 5® ,

Figuur 6 toont vergroot een gedeelte van een onder-nokkenasopstelling, welke is opgenomen in het ondertunnelblok.Figure 6 is an enlarged view of a portion of a lower camshaft arrangement included in the sub-tunnel block.

Figuur 7 toont daarbij zeer sterk vergroot een gedeelte van deze tunnel-opstelling en waarbij boven deze trillende drukwand-sectie ervan de opvolgende, zich ononderbroken erbovenlangs verplaatsende en mede erdoor eveneens trillende opvolgende substraat-gedeeltes, met mede de combinatie van een snelle opwaartse - en een daarop-volgende langzame neerwaartse verplaatsing ervan, en daarboven zulk een trillend transducer-gedeelte met typisch een snelle neerwaartse - en een daarop-volgende langzame opwaartse verplaatsing van het onderwand-gedeelte ervan.Figure 7 shows a highly enlarged part of this tunnel arrangement and in which above this vibrating pressure wall section its successive, continuously moving along it and partly also vibrating successive substrate sections, including the combination of a rapid upward and a subsequent slow downward displacement thereof, and above such a vibrating transducer portion with typically a fast downward - and a subsequent slow upward displacement of its lower wall portion.

Zulks ten behoeve van een optimaal snel vullen van de in een voorgaand tunnel-gedeelte bewerkstelligde, typisch minder dan 30 nanometer brede uitsparingen/crevices in de bovenlaag van deze opvolgende semiconductor substraat-gedeeltes, zoals uiterst vergroot is aangegeven in de Figuren 8A en 8B en waarbij in de Figuur 8A het tonen van de maximale bewerkstelligde hoogte van het tussen-liggende bovenspleet-gedeelte, en in de Figuur 8® de minimale bewerkstelligde hoogte ervan tijdens zulke tril-condities van deze onder-nokkenasopstelling en deze boven-transducer-opstelling.For the purpose of optimum rapid filling of the recesses / crevices, typically less than 30 nanometer wide, achieved in a preceding tunnel section in the upper layer of these successive semiconductor substrate sections, as is shown extremely enlarged in Figures 8A and 8B and wherein in Figure 8A showing the maximum effected height of the intermediate top gap portion, and in Figure 8®, the minimum effected height thereof during such vibrating conditions of this lower camshaft arrangement and this upper transducer arrangement.

Figuur 9 toont een meng-inrichting, waarbij daarin in het bovenste gedeelte ervan het ononderbroken mengen plaats vindt van de toegevoerde combinatie van deeltjes van een vaste semiconductor substantie met een hoog percentage laag—kokend vloeibaar draagmedium 16 en in het onderste gedeelte ervan het ononderbroken mengen van deze combinatie met een hoog percentage hoog-kokend vloeibaar draagmedium.Figure 9 shows a mixing device in which there is continuous mixing in the upper part thereof of the supplied combination of particles of a solid semiconductor substance with a high percentage of low-boiling liquid carrier medium 16 and in the lower part thereof continuous mixing of this combination with a high percentage of high-boiling liquid carrier medium.

Figuur 10 toont in een gedeelte van deze tunnel-opstelling de toepassing in het boventunnelblok ervan een eerste stripvormige transducer-opstelling ten behoeve van het daarmede mede ononderbroken plaatsvinden van verdamping van het laag-kokende vloeibare draagmedium en onder de daaropvolgende tweede transducer-opstelling het daarmede plaatsvinden van verdamping van het hoger-kokende vloeibare draagmedium met daarbij, indien benodigd, achter zulk een stripvormige afvoer-inrichting voor het verdampte vloeibare draagmedium wederom zulk een stripvormige toevoer-inrichting voor reinigings-medium en de daarop-volgende toevoer-inrichting voor gasvormig slot-medium ten behoeve van het gereinigd houden van het daarop-volgende onderwand-gedeelte van dit boventunnelblok.Figure 10 shows in a part of this tunnel arrangement the application in its upper tunnel block a first strip-shaped transducer arrangement for the co-continuous occurrence of evaporation of the low-boiling liquid carrier medium and underneath the subsequent second transducer arrangement evaporation of the higher-boiling liquid carrier medium including, if necessary, behind such a strip-shaped discharge device for the evaporated liquid carrier medium, again such a strip-shaped supply device for cleaning medium and the subsequent supply device for gaseous lock medium for keeping the subsequent bottom wall portion of this upper tunnel block cleaned.

Daarbij achter deze tweede transducer in het boventunnelblok de opname van een stripvormig electrisch verwarmingselement ten behoeve van het daarmede smelten van deze deeltjes van zulk een vaste substantie onder de vorming van een vloeibare laag ervan en daarachter de opname van een stripvormige afkoel-inrichting ten behoeve van het vormen van een vaste laag ervan.In addition, the inclusion of a strip-shaped electric heating element behind this second transducer in the upper tunnel block for melting these particles of such a solid substance with it, thereby forming a liquid layer thereof and behind that the inclusion of a strip-shaped cooling device for the purpose of forming a solid layer thereof.

Figuur llA toont daarbij het begin van het verhoogde bovenspleet-ge deel te onmiddellijk achter het stripvormige medium-toevoergedeelte van deze medium-toevoerinrichting en waarbij de Figuren 11®> C en D opvolgende gedeeltes van de bovenspleet onder deze beide transducers tonen, met daarin het aangeven van een sterk vergrootte hoogte ervan nabij de beide stripvormige afvoer-inrichtingen achter deze transducer-opstellingen.Figure 11A thereby shows the start of the raised upper slit portion immediately after the strip-shaped medium supply portion of this medium supply device and where Figures 11®> C and D show successive portions of the upper slit below both of these transducers, with the indicating a greatly increased height thereof near the two strip-shaped discharge devices behind these transducer arrangements.

Figuur 12 toont zeer sterk vergroot in het gedeelte achter deze tweede transducer-opstelling wederom de vulling met nanometer grote deeltjes van een vaste semiconductor substantie van de bewerkstelligde crevices, welke zijn opgenomen in de semiconductor bovenlaag van deze opvolgende, eronderlangs verplaatsende semiconductor substraat-gedeeltes.Figure 12 shows, greatly enlarged in the portion behind this second transducer arrangement, again the nanometer-sized particle filling of a solid semiconductor substance of the accomplished crevices, which are included in the semiconductor upper layer of these subsequent semiconductor substrate portions moving alongside it.

Figuur 13 toont na het tenminste mede vullen van deze crevices met deze deeltjes van een metalen substantie,met behulp van zulk een electrische verwarmings-inrichting een bewerkstelligde vloeibare laag van deze substantie.Figure 13 shows, after at least co-filling these crevices with these particles of a metal substance, with the aid of such an electric heating device, a liquid layer of this substance obtained.

Figuur 14 toont het af gekoeld zijn van deze vloeibare laag onder de vorming van een vaste conditie van tenminste mede de vulling van deze crevices.Figure 14 shows the cooling of this liquid layer with the formation of a solid condition of at least the filling of these crevices.

Figuur 15 toont daar bij in deze tunnel-op stel ling de toepassing van opvolgende gedeeltes van een daarin in de ingangszijde ervan ononderbroken toegevoerde kunststof-f olie, waarbij in de bovenlaag ervan het tenminste mede bewerkstelligd zijn van zulke, met een metaal gevulde crevices.Figure 15 also shows in this tunnel arrangement the use of successive portions of a plastic film continuously supplied therein at the entrance side thereof, wherein in its upper layer at least co-effect of such metal-filled crevices is achieved.

Figuur 16 toont daarbij in deze tunnel-opstelling de toepassing van opvolgende semiconductor substraat-gedeeltes en waarbij in de di-electrische bovenlaag ervan tenminste mede het bewerkstelligd zijn van zulke, met een metalen substantie gevulde crevices.Fig. 16 shows the use of successive semiconductor substrate sections in this tunnel arrangement and wherein in its dielectric upper layer at least also the effect of such crevices filled with a metal substance is achieved.

Figuur 17 toont nog achter deze beide transducer-opsteHingen in het boventunnelblok een derde transducer-opstelling ten behoeve van het daarmede wederom plaatsvinden van een egalisatie-proces van deze opgebrachte, typisch nanometer hoge laag van deeltjes van zulk een vaste semiconductor substantie, zoals sterk vergroot is aangegeven in de Figuren 18^ en 18B, en zulks ten behoeve van het in de daarop-volgende tunnel-gedeeltes plaatsvinden van zulk een ononderbroken verwarmings—proces onder de vorming van een nanometer hoge vloeibare laag van deze semiconductor substantie, en het daarop-volgende afkoel-proces van deze vloeibare laag onder de vorming van een vaste conditie ervan.Figure 17 shows behind these two transducer arrangements in the upper tunnel block a third transducer arrangement for the purpose of again taking place an equalization process of this applied, typically nanometer high layer of particles of such a solid semiconductor substance, such as greatly increased is shown in Figures 18 ^ and 18B, and for the purpose of the occurrence of such a continuous heating process in the subsequent tunnel sections to form a nanometer-high liquid layer of this semiconductor substance, and the subsequent subsequent cooling process of this liquid layer to form a solid condition thereof.

De Figuur 1 toont nog een inrichting ten behoeve van de bewerkstelliging van typisch minder dan 5 nanometer grote deeltjes van een vaste, typisch metalen substantie en waarbij daaronder een meng-inrichting ten behoeve van het mengen van deze deeltjes met typisch een hoger percentage laag-kokend vloeibaar draagmedium ten behoeve van de ononderbroken toevoer ervan naar deze bovenste meng-inrichting van deze medium-toevoerinrichting.Figure 1 shows another device for producing typically less than 5 nanometer large particles of a solid, typically metal substance, and below which is a mixing device for mixing these particles with typically a higher percentage of low-boiling liquid carrier medium for the uninterrupted supply thereof to this upper mixing device of this medium supply device.

De uitvinding zal hieronder nader worden uiteengezet aan de hand van de in deze Figuren aangegeven inrichtingen ten behoeve van de opbouw van een nanometer hoge laag van vaste deeltjes op de opvolgende semiconductor substraat-gedeeltes.The invention will be explained in more detail below with reference to the devices shown in these Figures for the construction of a nanometer-high layer of solid particles on the subsequent semiconductor substrate portions.

Figuur 1 toont in het boventunnelblok 12 van de semiconductor tunnel-opstelling 10 de opname van de stripvormige medium-toevoerinrichting 14, waarin het plaatsvinden van een ononderbroken toevoer van de combinatie van vloeibaar draagmedium 16 en deeltjes 18 van een vaste semiconductor substantie en waarbij daarin in het bovenste gedeelte ervan de opname van typisch de eerste cilindrische meng-inrichting 20 ten behoeve van het daarin mengen van een laag percentage van tenminste mede zulke deeltjes 18 met een hoog percentage vloeibaar draagmedium, welke daarbij typisch gelijk kan zijn aan dit draagmedium 16, en waarbij deze meng-inrichting 20 aan de onderzijde ervan via typisch een aantal naast elkaar gelegen mediuis-afvoerkanalen 24 is aangesloten op een tweede, eveneens typisch cilindrische meng-inrichting 26, met daarin eveneens de continue toevoer van een aanzienlyk hoger percentage van typisch hetzelfde vloeibare draagmedium 16 ten behoeve van het in benedenwaartse richting afvoeren van deze combinatie draagmedium 16 en zulke deeltjes 18 van deze semiconductor substantie via een groot aantal naast elkaar gelegen kanalen 28 naar het eronder gelegen stripvormige toevoer-gedeelte 30 van de bovenspleet 32 van deze tunnel-opstelling 10 boven de eveneens tijdens de werking van deze tunnel-opstelling ononderbroken erdoorheen verplaatsende semiconductor substraat-gedeeltes 34.Figure 1 shows in the upper tunnel block 12 of the semiconductor tunnel arrangement 10 the incorporation of the strip-shaped medium supply device 14, in which there is a continuous supply of the combination of liquid carrier medium 16 and particles 18 of a solid semiconductor substance and in which therein the upper part thereof the accommodation of typically the first cylindrical mixing device 20 for mixing therein a low percentage of at least such particles 18 with a high percentage of liquid carrier medium, which can thereby typically be equal to this carrier medium 16, and said mixing device 20 being connected at its underside via typically a number of adjacent media discharge channels 24 to a second, likewise typically cylindrical mixing device 26, also containing therein the continuous supply of a substantially higher percentage of typically the same liquid carrier medium 16 for discharging downwards of this combination of carrier medium 16 and such particles 18 of this semiconductor substance via a large number of adjacent channels 28 to the underlying strip-shaped supply part 30 of the upper gap 32 of this tunnel arrangement 10 above the also during the operation of this tunnel arrangement of continuous semiconductor substrate portions passing therethrough 34.

Figuur 2 toont in deze tunnel-opstelling 10 achter deze medium-toevoerinrichting 14 de in het boventunnelblok 12 opgenomen uitwisselbare stripvormige transducer-opstelling 38, waarbij in het compartiment 40 ervan de opname van de stripvormige transducer 42 ten behoeve van typisch het daarmede verdampen van het laag-kokende vloeibare draagmedium onder neerslag van deze deeltjes 18 op de opvolgende, ononderbroken eronderlangs verplaatsende semiconductor substraat-gedeeltes 34 onder tril-conditie ervan en waarbij via het erboven gelegen gedeelte 44 met een toenemende hoogte ervan af voer van het gevormde dampvormige medium 46 plaats vindt naar de daarop-volgende stripvormige afvoer-inrichting 48, welke eveneens is opgenomen in dit boventunnelblok 12.Figure 2 shows in this tunnel arrangement 10 behind this medium supply device 14 the interchangeable strip-shaped transducer arrangement 38 accommodated in the upper tunnel block 12, in which compartment 40 thereof accommodates the strip-shaped transducer 42 for the purpose of typically evaporating the same with it. low-boiling liquid carrier medium with precipitation of these particles 18 on the successive, continuously moving semiconductor substrate portions 34 thereof under vibratory condition and wherein the vapor-shaped medium 46 formed with increasing height from the superimposed portion 44 to the subsequent strip-shaped discharge device 48, which is also included in this upper tunnel block 12.

Figuren 2^> B en C tonen zeer sterk vergroot de neerslag van de combinatie van de d?eeitjes van de vaste substantie 18 en vloeibaar draa-gmedium 16 op de opvolgende semiconductor substraat-gedeeltes 34, welke worden meeverplaatst door de metalen band 36 onder daarbij een afnemende hoogte van deze combinatie.Figures 2> B and C show greatly increased precipitation of the combination of the particles of the solid substance 18 and liquid carrier medium 16 on the subsequent semiconductor substrate portions 34, which are co-displaced by the metal strip 36 underneath thereby decreasing the height of this combination.

Figuur 2^ toont zeer sterk vergroot de neerslag van uitsluitend deze deeltjes van de vaste substantie 18 op deze opvolgende substraat-gedeeltes 34 ter plaatse van het achter-gedeelte van deze transducer 42.Figure 2 shows very greatly increased precipitation of only these particles of the solid substance 18 on these successive substrate portions 34 at the rear portion of this transducer 42.

Figuur 2^ toont daarbij zeer sterk vergroot de neerslag van uitsluitend deze deeltjes van de vaste substantie 18 op de metalen semiconductor onderlaag 76.Figure 2 ^ shows a very large increase in the precipitation of only these particles of the solid substance 18 on the metal semiconductor substrate 76.

Figuur 2F toont zulk een neerslag van deze deeltjes vaste substantie op de di-electrische bovenlaag 78 van de opvolgende semiconductor substraat-gedeeltes 34.Figure 2F shows such a deposit of these particles of solid substance on the dielectric top layer 78 of the subsequent semiconductor substrate portions 34.

Figuur 2^ toont zulk een neerslag van deze vaste substantie 18 op de kunststof bovenlaag 80 van de opvolgende semiconductor substraat-gedeeltes.Figure 2 shows such a deposit of this solid substance 18 on the plastic top layer 80 of the subsequent semiconductor substrate portions.

In de Figuur 3 is achter deze afvoer-inrichting 62 de stripvormige toevoer-inrichting 64 voor typisch reinigings-medium 66 aangegeven, met mede afvoer ervan via deze afvoer-inrichting ten behoeve van het gereinigd/schoonhouden van het tussengelegen onderwand-gedeelte 68 van het boventunnelblok 12.Figure 3 shows behind this discharge device 62 the strip-shaped feed device 64 for typical cleaning medium 66, including its discharge via this discharge device for the purpose of cleaning / keeping the intermediate lower wall portion 68 of the upper tunnel block 12.

Zulk een toevoer-inrichting voor reinigings-medium is onder andere gewenst bij toepassing van de via deze toevoer- inrichting toegevoerde deeltjes van de substantie 18', waarbij het mogelijk tevens plaatsvinden van een beperkte neerslag van deeltjes op het voorgaande onderwand-gedeelte 68.Such a supply device for cleaning medium is desirable inter alia when using the particles of the substance 18 'supplied via this supply device, whereby it is possible that a limited precipitation of particles on the preceding bottom wall portion 68 may also take place.

Achter deze toevoer-inrichting 64 de opname van de stripvormige toevoer-inrichting 70 ten behoeve van het ononderbroken toevoeren van gasvormig medium 72, met mede afvoer ervan via deze af voer-inrichting 62 ten behoeve van het tevens onderhouden van zulk een schoonhouden van tevens het tussen-gelegen onderwand-gedeelte 74 van dit blok 12.Behind this supply device 64 the accommodation of the strip-shaped supply device 70 for the continuous supply of gaseous medium 72, including its discharge via this discharge device 62 for the purpose of also maintaining such a cleaning of the intermediate bottom wall portion 74 of this block 12.

Figuur 4 toont achter de in de Figuur 2 mede aangegeven eerste transducer-opstelling 38 een tweede transducer-opstelling 52 ten behoeve van het typisch met behulp van het trillen ervan het plaatsvinden van een egalisatie-proces van deze opgebrachte laag van zulke deeltjes 18 van een vaste substantie, zoals sterk vergroot is aangegeven in de Figuur 4a.Figure 4 shows behind the first transducer arrangement 38 co-indicated in Figure 2 a second transducer arrangement 52 for the purpose of typically using a vibration thereof to effect a leveling process of this applied layer of such particles 18 of a solid substance, as greatly enlarged is indicated in Figure 4a.

Daarbij het onderhouden van een minimale micrometer hoogte van de opvolgende bovenspleet-gedeeltes 44 ten behoeve van zulk een egalisatie-proces van de opgebrachte, typisch nanometer hoge laag van deze deeltjes 18.Thereby maintaining a minimum micrometer height of the subsequent upper slit portions 44 for such a smoothing process of the applied, typically nanometer high layer of these particles 18.

Daarachter wederom zulk een stripvormige afvoer-opstelling 62 voor tenminste mede nog verdampt vloeibaar draagmedium 66 en daarachter wederom zulk een stripvormige toevoergroef-opstelling 64 voor reinigings-medium 68 em de daarop-volgende stripvormige toevoergroef-opstelling 70 voor gasvormig slotmedium 72.Behind again such a strip-shaped discharge arrangement 62 for at least co-evaporated liquid carrier medium 66 and behind this again such a strip-shaped feed slot arrangement 64 for cleaning medium 68 and the subsequent strip-shaped feed slot arrangement 70 for gaseous lock medium 72.

Figuur 5 toont als alternatief voor zulk een stripvormige transducer-opstelling de opname in het boventunnelblok 12 van een stripvormige roterende nokkenas-opstelling 98 onder daarbij tijdens de werking ervan het aangegeven zijn van het onderhouden van typisch een snelle neerwaartse verplaatsing en een daarop-volgende langzame opwaartse verplaatsing van het stripvormige drukwand-gedeelte van de nokkenas 100 ten behoeve van het daarmede eveneens bewerkstelligen van een optimaal vlakke conditie van de neergeslagen deeltjes 18 van zulk een vaste semiconductor substantie.Figure 5 shows, as an alternative to such a stripe-shaped transducer arrangement, the incorporation into the upper tunnel block 12 of a stripe-shaped rotary camshaft arrangement 98 while indicating, during its operation, that it typically maintains a rapid downward movement and a subsequent slow downward movement. upward displacement of the strip-shaped pressure wall portion of the camshaft 100 for thereby also achieving an optimally flat condition of the precipitated particles 18 of such a solid semiconductor substance.

Daarbij in dit drukwand-gedeelte 102 de opname van een dunwandige stripvormige electrische verwarmings-inrichting 104 ten behoeve van het daarmede tevens verdampen van het vloeibare draagmedium onder het plaatsvinden van zulk neerslag-proces van deze deeltjes 18 van de vaste semiconductor substantie, zoals zeer sterk vergroot is aangegeven in de Figuren 5^ t/m D> onder het tenslotte op gebouwd zijn van een typisch nanometer hoge laag van deze deeltjes 18 op de opvolgende eronderlangs verplaatsende metalen folie-gedeeltes 106, zoals is aangegeven in de Figuur 5®.The inclusion of a thin-walled strip-shaped electric heating device 104 in this pressure wall portion 102 for thereby also evaporating the liquid carrier medium while taking place such a precipitation process of these particles 18 of the solid semiconductor substance, such as very strong Figs. 5 ^ to D> are enlarged while finally building a typical nanometer high layer of these particles 18 on the subsequent metal foil sections 106 moving therebetween, as shown in Fig. 5®.

Verder vindt via de toevoer-leiding 108 de ononderbroken toevoer van vloeibaar medium 110 naar het nokkenas-compartiment 112 plaats, met de ononderbroken afvoer ervan via de afvoer-leiding 114.Further, via the supply line 108, the continuous supply of liquid medium 110 to the camshaft compartment 112 takes place, with its uninterrupted discharge via the discharge line 114.

Verder is nog in de Figuur 1 de opname aangegeven van de inrichting 116, waarin tijdens de werking ervan de ononderbroken bewerkstelliging van typisch minder dan 5 nanometer grote deeltjes van zulk een vaste, typisch veelal metalen semiconductor substantie 18 en waarbij deze inrichting via typisch een aantal toevoer-leidingen 118 is aangesloten op de eronder gelegen meng-inrichting 120 , en waarin het ononderbroken plaatsvinden van het mengen ervan met een daarop ononderbroken toegevoerd hoger percentage van typisch eveneens het laag-kokende vloeibare draagmedium 16.Furthermore, Figure 1 also shows the recording of the device 116, in which during its operation the uninterrupted realization of typically less than 5 nanometer large particles of such a solid, typically mostly metal semiconductor substance 18 and wherein this device via typically a number of supply lines 118 are connected to the underlying mixing device 120, and in which the uninterrupted occurrence of their mixing with a continuously supplied higher percentage of the low-boiling liquid carrier medium 16 is also continuously supplied.

Daarbij het via typisch eveneens meerdere naast elkaar gelegen leidingen 122 ononderbroken toevoer ervan naar deze medium-toevoerinrichting 14.Thereby the continuous supply thereof via typically also several adjacent pipes 122 to this medium supply device 14.

Figuur 6 toont vergroot aangegeven een gedeelte van de toegepaste onder-nokkenasopstelling 124, welke is opgenomen in het ondertunnelblok 14.Figure 6 shows an enlarged view of a portion of the applied lower camshaft arrangement 124, which is included in the sub-tunnel block 14.

Daarbij met behulp van deze roterende nokkenas-opstelling het ononderbroken op- en neerwaarts verplaatsen van het stripvormige drukwand-gedeelte 126.Thereby, with the aid of this rotating camshaft arrangement, the continuous up and down movement of the strip-shaped pressure wall portion 126.

Deze nokkenas-opstelling bevat daarbij de nokken 128, welke daarbij typisch bestaan uit het relatief korte gedeelte 130 en het relatief lange gedeelte 132 en waarbij tijdens het verdraaien ervan met behulp van deze opvolgende nokken een opvolgend op- en neerwaarts verplaatsen van dit drukwand-gedeelte 126 plaats vindt, met daarbij een snelle opwaartse-en een daarop-volgende langzame neerwaartse verplaatsing ervan en tevens met behulp van dit drukwand-gedeelte het ononderbroken op- en neerwaartse verplaatsing van de ononderbroken erbovenlangs verplaatsende semiconductor substraat-gedeeltes 34, zoals is aangegeven in de Figuur 7 en zeer sterk vergroot in de Figuren 8A en 8®.This camshaft arrangement herein includes the cams 128, which typically consist of the relatively short portion 130 and the relatively long portion 132 and wherein during their rotation with the aid of these successive cams a successive up and down movement of this pressure wall portion 126 takes place with a rapid upward and a subsequent slow downward movement thereof and also with the aid of this pressure wall part the continuous up and down movement of the continuous semiconductor substrate parts 34 moving along it, as indicated in Figure 7 and greatly enlarged in Figures 8A and 8®.

Verder in het boventunnelblok 12 de opname van de stripvormige transducer 42 en waar bij de trillingen ervan typisch een snelle neerwaartse- en een daarop-volgende langzame opwaartse verplaatsing hebben, zoals eveneens is aangegeven in deze Figuur 7.Further, in the upper tunnel block 12, the incorporation of the strip-shaped transducer 42 and where its vibrations typically have a fast downward and a subsequent slow upward movement, as also indicated in this Figure 7.

Zulks mede ten behoeve van een optimaal snel vullen van de in een voorgaand tunnel-gedeelte bewerkstelligde, typisch minder dan 30 nanometer brede uitsparingen/crevices 134 in de di-electrische bovenlaag 136 van deze opvolgende semiconductor substraat-gedeeltes 34, zoals uiterst vergroot is aangegeven in de Figuren 8A en 8® en waarbij in de Figuur 8a het tonen van de maximale bewerkstelligde hoogte van het tussen-liggende bovenspleet-gedeelte 46, en in de Figuur 8® de minimale bewerkstelligde hoogte ervan tijdens zulke tril-condities van deze onder-nokkenasopstelling en deze boven-transduceropstelling.Partly for the purpose of an optimum rapid filling of the recesses / crevices 134 in the previous tunnel section, typically less than 30 nanometers wide, in the dielectric top layer 136 of these successive semiconductor substrate sections 34, as indicated in an extremely enlarged manner in Figures 8A and 8®, and in Figure 8a showing the maximum effected height of the intermediate upper slit portion 46, and in Figure 8® the minimum effected height thereof during such vibration conditions of these lower camshaft arrangement and this top transducer arrangement.

Figuur 9 toont de meng-inrichting 140, waarbij daarin in het bovenste gedeelte ervan het ononderbroken mengen plaats vindt van de toegevoerde combinatie van deeltjes van een vaste semiconductor substantie 18 met een hoog percentage laag-kokend vloeibaar draagmedium 16 en in het onderste gedeelte ervan het ononderbroken mengen van deze combinatie met een hoog percentage hoog-kokend vloeibaar draagmedium 142.Figure 9 shows the mixing device 140, in which in the upper part thereof there is continuous mixing of the supplied combination of particles of a solid semiconductor substance 18 with a high percentage of low-boiling liquid carrier medium 16 and in the lower part thereof. continuous mixing of this combination with a high percentage of high-boiling liquid carrier medium 142.

Figuur 10 toont in een gedeelte van deze tunnel-opstelling 10 de toepassing in het boventunnelblok 12 ervan een eerste stripvormige transducer-opstelling 144 ten behoeve van het daarmede ononderbroken plaatsvinden van verdamping van het laag-kokende vloeibare draagmedium 16 en onder de daarop-volgende tweede transducer-opstelling 146 het daarmede plaatsvinden van verdamping van het hoger-kokende vloeibare draagmedium 142 met daarbij, indien benodigd, achter zulk een stripvormige afvoer-inrichting 62 voor het verdampte vloeibare draagmedium wederom zulk een stripvormige toevoer-inrichting voor reinigings-medium en de daarop-volgende toevoer-inrichting voor gasvormig slotmedium ten behoeve van het gereinigd houden van het daaropvolgende onderwand-gedeelte van dit boventunnelblok en zoals is aangegeven in de Figuur 3.Figure 10 shows in a portion of this tunnel arrangement 10 the use in its upper tunnel block 12 a first strip-shaped transducer arrangement 144 for the uninterrupted occurrence of evaporation of the low-boiling liquid carrier medium 16 and below the subsequent second transducer arrangement 146 with this the evaporation of the higher-boiling liquid carrier medium 142 including, if necessary, behind such a strip-shaped discharge device 62 for the evaporated liquid carrier medium again such a strip-shaped supply device for cleaning medium and the cleaning medium thereon - following supply device for gaseous lock medium for keeping the subsequent bottom wall portion of this upper tunnel block clean and as indicated in Figure 3.

Achter deze tweede afvoer-inrichting in dit blok 12 de opname van een stripvormig electrisch verwarmingselement 148 ten behoeve van het daarmede smelten van deze deeltjes 16 van zulk een vaste substantie onder de vorming van de vloeibare laag 150 ervan en daarachter de opname van de stripvormige afkoel-inrichting 152 ten behoeve van het vormen van de vaste laag 154 ervan.Behind this second discharge device in this block 12 the accommodation of a strip-shaped electric heating element 148 for melting these particles 16 of such a solid substance with it, forming the liquid layer 150 thereof and thereafter the accommodation of the strip-shaped cooling device 152 for forming its solid layer 154.

Figuur llA toont daarbij het begin van het verhoogde bovenspleet-gedeelte 156 onmiddellijk achter het stripvormige medium-toevoergedee1 te 158 van deze medium-toevoer inrichting 140 en waarbij de Figuren 11®» ^ en ® de opvolgende gedeeltes 160, 162 en 164 van de bovenspleet onder deze beide transducers 144 en 146 tonen, met daarin het aangeven van de sterk toenemende hoogtes ervan.Figure 11A thereby shows the beginning of the raised upper slit portion 156 immediately after the strip-shaped medium supply portion 158 of this medium supply device 140 and wherein Figures 11® and® the successive portions 160, 162 and 164 of the upper slit 144 and 146 below these two transducers, indicating the strongly increasing heights.

Figuur 12 toont zeer sterk vergroot in het gedeelte achter deze tweede transducer-opstelling 146 wederom de vulling met nanometer grote deeltjes 18 van deze vaste semiconductor substantie van de bewerkstelligde crevices 166, welke zijn opgenomen in de semiconductor bovenlaag 168 van deze opvolgende, eronderlangs verplaatsende semiconductor substraat-gedeeltes 34·Figure 12 shows, greatly enlarged in the portion behind this second transducer arrangement 146, again the nanometer-sized particle filling 18 of this solid semiconductor substance of the crevices 166 effected, which are contained in the semiconductor upper layer 168 of this successive semiconductor moving below it substrate portions 34 ·

Figuur 13 toont na het tenminste mede vullen van deze crevices 166 met deze deeltjes 18 van een metalen substantie, met behulp van zulk een electrische verwarmings-inrichting 148 de bewerkstelligde vloeibare laag 150 van deze substantie.Figure 13, after at least co-filling these crevices 166 with these particles 18 of a metal substance, with the aid of such an electric heating device 148, the liquid layer 150 of this substance achieved.

Figuur 14 toont het afgekoeld zijn van deze vloeibare laag 150 onder de vorming van de vaste laag 152 en onder het daarmede tenminste mede gevuld zijn van deze crevices.Figure 14 shows the cooling of this liquid layer 150 while forming the solid layer 152 and at least filling these crevices with it.

Figuur 15 toont daarbij in deze tunnel-opstelling 10 de toepassing van opvolgende gedeeltes van de daarin in de ingangszijde ervan ononderbroken toegevoerde kunststof-folie 170, waarbij in de bovenlaag 172 ervan het tenminste mede bewerkstelligd zijn van zulke, met een metaal gevulde crevices 166.Figure 15 shows in this tunnel arrangement 10 the use of successive portions of the plastic film 170 continuously supplied therein at the entrance side thereof, wherein in the upper layer 172 thereof at least co-effect of such metal-filled crevices 166 are achieved.

Figuur 16 toont daar bij in deze tunnel-opstelling de toepassing van opvolgende semiconductor substraat-gedeeltes 34 en waar bij in de di-electrische bovenlaag 174 ervan tenminste mede het bewerkstelligd zijn van zulke, met een metalen substantie gevulde crevices 166.Figure 16 shows the use of successive semiconductor substrate portions 34 in this tunnel arrangement and, at least in the dielectric upper layer 174 thereof, that such crevices 166 filled with a metal substance have been achieved.

Figuur 17 toont nog achter deze beide transducer-opstellingen 144 en 146 in het boventunnelblok 12 de opname van de derde transducer-opstelling 176 ten behoeve van het daarmede wederom plaatsvinden van een egalisatie-proces van deze opgebrachte, typisch nanometer hoge laag 178 van deeltjes 18 van zulk een vaste semiconductor substantie, zoals sterk vergroot is aangegeven in de Figuren 18A en 18B> en zulks ten behoeve van het in de daarop-volgende tunnel-gedeeltes plaatsvinden van zulk een ononderbroken verwarmings-proces met behulp van zulk een electrische verwarmings-inrichting 148 onder de vorming van de nanometer hoge vloeibare laag 180 van deze semiconductor substantie 18, en in de daarop-volgende afkoel-inrichting 152 plaatsvinden van een afkoel-proces van deze vloeibare laag onder de vorming van de vaste laag 182 ervan.Figure 17 still shows behind these two transducer arrangements 144 and 146 in the upper tunnel block 12 the incorporation of the third transducer arrangement 176 for the purpose of again taking place an equalization process of this applied, typically nanometer-high layer 178 of particles 18 of such a solid semiconductor substance, as greatly enlarged is indicated in Figures 18A and 18B> and for the purpose of such a continuous heating process taking place in the subsequent tunnel sections with the aid of such an electric heating device 148 with the formation of the nanometer-high liquid layer 180 of this semiconductor substance 18, and in the subsequent cooling device 152, a cooling process of this liquid layer takes place to form its solid layer 182.

Verder is deze tunnel-opstelling zodanig uitgevoerd en bevattende zodanige middelen, dat daarbij daarin tevens de mogelijke toepassing van meerdere van de middelen en werkwijzen van de semiconductor faciliteit, -installatie, -tunnel-opstellingen en - inrichtingen, welke zijn aangegeven en omschreven in de recent door de aanvrager ingediendeFurthermore, this tunnel arrangement is designed and contains such means that it also includes the possible application of several of the means and methods of the semiconductor facility, installation, tunnel arrangements and devices, which are indicated and described in the recently submitted by the applicant

Nederlandse Octrooi-aanvragen betreffende zulk een semiconductor tunnel-opstelling.Dutch Patent Applications concerning such a semiconductor tunnel arrangement.

Verder, dat daarbij daarin de mogelijke toepassing van alle reeds algemeen gebruikt wordende semiconductor behandelingen voor wafers in semiconductor modules, ook welke reeds zijn omschreven in Octrooien, indien daarin de vermelding in de tekst en Conclusies van het navolgende: a) een individuele semiconductor wafer of - substraat; of bj een al dan niet individuele semiconductor module.Furthermore, the possible application of all semiconductor treatments that are already generally used for wafers in semiconductor modules, including those already described in Patents, if therein the mention in the text and Conclusions of the following: a) an individual semiconductor wafer or - substrate; or bj an individual or non-individual semiconductor module.

Verder, dat daarbij de in deze Octrooi-aanvrage omschreven middelen en werkwijzen tevens toepasbaar zijn in deze andere semiconductor tunnel-opstellingen, welke zijn aangegeven en omschreven in deze andere Octrooi-aanvragen van de aanvrager .Furthermore, the means and methods described in this Patent Application are also applicable to these other semiconductor tunnel arrangements, which are indicated and described in these other Patent applications of the applicant.

Claims

CLAIMS 1. A semiconductor tunnel arrangement which is embodied such and comprising means such that, in the upper tunnel block thereof, the accommodation of a number of strip-shaped devices, which typically extend transversely of the central upper semiconductor treatment portion thereof for use during the its effect, thereby continuously effecting a layer of particles of a solid semiconductor substance that is at least nanometer high on the subsequent, continuously moving semiconductor substrate portions.

Tunnel arrangement according to Claim 1, characterized in that it is further embodied such that it comprises means such that the use of typically less than 10 nanometer large particles of such a semiconductor substance is involved.

Tunnel arrangement according to Claim 2, characterized in that such particles consist of a metal substance.

Tunnel arrangement according to Claim 2, characterized in that such particles consist of a dielectric substance.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that it comprises means such that, above the upper tunnel block thereof, the accommodation of a device for the purpose therein of producing such particles of a solid semiconductor substance and including a strip-shaped mixing device therefor for mixing these particles with typically a higher percentage of an evaporable liquid carrier medium which is also continuously supplied therein.

6. Tunnel arrangement as claimed in claim 5, characterized in that it is further embodied such and comprises means such that the use therein of a following mixing devices, typically located below this first mixing device, for continuous use therein fed, typically also vaporizable, low-boiling liquid carrier medium with a considerably higher percentage thereof.

Tunnel arrangement according to Claim 6, characterized in that it is further designed and comprises means such that, for this purpose, the inclusion in the upper tunnel block thereof of a strip-shaped medium supply device in which the uninterrupted supply of the combination of liquid carrier medium and particles of a solid semiconductor substance and including, in the upper part thereof, the accommodation of typically a cylindrical mixing device, containing a rotating camshaft arrangement for mixing a low percentage of at least such particles with a high percentage of liquid carrier medium, which is thereby typically the same as the first carrier medium.

Tunnel arrangement according to Claim 7, characterized in that it is further embodied such that it comprises means such that, at its lower end, this mixing device is connected via a number of adjacent medium discharge channels to a second, also typically cylindrical mixing device, including also the incorporation of such a rotary camshaft arrangement and the continuous supply of a substantially higher percentage of typically the same liquid carrier medium for the purpose of discharging this combination of carrier medium and the like downwardly particles of this semiconductor solid substance via a large number of adjacent channels to the underlying strip-shaped supply portion of the upper slit of this tunnel arrangement above the semiconductor substrate portions which also continuously move through it during the operation of this tunnel arrangement.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprises such means that, behind such a medium supply device, there is an exchangeable strip-shaped tri1 / heating device incorporated in its upper tunnel block, with in its compartment the accommodation of a strip-shaped device for typically evaporating the low-boiling liquid carrier medium therewith with a vibrating precipitate of these particles on the subsequent, continuously moving semiconductor substrate sections along it, and wherein via an intermediate part of this top gap with an increasing height thereof, continuous discharge of the vapor medium formed takes place to a subsequent strip-shaped discharge section of this top tunnel block.

Tunnel arrangement according to Claim 9, characterized in that it is further designed and comprises means such that the vibrating condition of such a vibrating / heating device is thereby maintained under a certain, advantageous profiling of the vibrations generated by it.

11. A tunnel arrangement as claimed in Claim 10, characterized in that it is further designed in such a way that the deposition of at least almost exclusively these particles of solid substance on these successive substrate portions at the location of such a vibration / heating device takes place.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied such that it comprises means for depositing the particles of this solid substance and liquid carrier medium on the subsequent semiconductor substrate. - portions which are co-displaced by a continuous metal band moving through it, and thereby a decreasing height of this combination of this carrier medium and these particles.

Tunnel arrangement according to Claim 11, characterized in that it is further designed and comprises means such that the precipitation of at least almost exclusively these particles of the solid substance takes place on a liquid bond, which may or may not be temporary. substance applied to a metal substrate in a previous tunnel section.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that it comprises means such that precipitation of at least almost exclusively these particles of the solid substance takes place on the nanometer high layer of a liquid adhesive substance applied in a preceding tunnel portion to a dielectric top layer of the subsequent semiconductor substrate portions moving therethrough.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprises means such that a precipitation of these particles of a solid substance takes place on a nanometer-high layer of a liquid adhesive. substance which has been applied in a preceding tunnel section to a plastic top layer of the subsequent semiconductor substrate sections.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied such and comprising means such that behind such a strip-shaped discharge device for evaporated liquid carrier medium the inclusion in the upper tunnel block of a strip-shaped supply device for typical liquid cleaning medium, including its removal via this discharge device for the purpose of cleaning / keeping the intermediate lower wall part of the upper tunnel block, as it may have also occurred therein a limited precipitation of such particles on this lower wall -part .

Tunnel arrangement according to Claim 16, characterized in that it is further designed such that it comprises means such that, behind this feed device for cleaning medium, the accommodation of a strip-shaped feed device for continuous feeding of gaseous medium, including its discharge via this discharge device for the purpose of also maintaining such a clean condition of also the intermediate lower wall part of this block and also its functioning as a closing medium.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprises such means that behind such a first vibration / heating device the inclusion of a second vibration / heating device in this upper tunnel block for the purpose of typically having it vibrate, a leveling process of this applied layer of such particles of a solid substance takes place.

Tunnel arrangement according to Claim 18, characterized in that it is further embodied such that it comprises means such that maintaining a minimum, micron height of the subsequent upper slit portions under such a device for such a equalization process.

Tunnel arrangement according to Claim 18 or 19, characterized in that it is further designed and comprises means such that, again behind such a subsequent strip-shaped discharge section in the upper tunnel block for at least co-evaporated liquid carrier medium. again the inclusion therein of such a strip-shaped feed device for cleaning medium and the subsequent strip-shaped feed device for gaseous lock medium.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that it comprises means such that for such a strip-shaped vibrator / evaporator the use of a strip-shaped transducer arrangement with which it is maintained therein of a sufficiently high vibration and heating condition for the purpose of vaporizing such a low-boiling liquid carrier medium.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprises means such that for such a strip-shaped vibrator / evaporator the use of a rotating camshaft arrangement and a cam contained therein heating device for the purpose of also maintaining typically a rapid downward displacement and a subsequent slow upward displacement of its strip-shaped pressure wall portion for the purpose of also achieving such an optimally flat condition of the precipitated particles of such particles a solid substance and in which in this pressure wall section the accommodation of a thin-walled strip-shaped electric heating device for the purpose of thereby also evaporating the liquid carrier medium which is also supplied underneath it while the continuous occurrence of such a precipitation process of these particles, with the finally be made up of a laa g of these particles on the subsequent semiconductor substrate portions moving underneath.

A tunnel arrangement as claimed in any one of the preceding claims, characterized in that it is further embodied such that it comprises means such that the inclusion of a rotating lower camshaft arrangement in such a tr il in its sub-tunnel block. heating device included in the upper tunnel block for the continuous up and downward movement of the strip-shaped pressure wall portion thereof and therewith of the subsequent semiconductor substrate portions moving thereabove.

Tunnel arrangement according to Claim 23, characterized in that it is further designed and comprises means such that, as is the case, this camshaft arrangement comprises a number of consecutive cams, which typically consist of a relatively short section and a relatively long one part, and where during its rotation with the aid of these successive cams a subsequent up and downward movement of this pressure wall part takes place, thereby maintaining a rapid upward and a subsequent slow downward movement thereof and also with with the aid of this pressure wall part the continuous up and down moving of the continuous semiconductor substrate parts moving along it.

25. A tunnel arrangement as claimed in Claim 24, characterized in that it is furthermore designed and comprising means such that the upper tunnel block thereof also accommodates a strip-shaped vibrator / heater and the vibrations thereof typically have fast downward and a subsequent slow upward displacement.

Tunnel arrangement according to Claim 25, characterized in that it is further designed and comprises means such that, as at least partly in its upper tunnel block, the inclusion of a strip-shaped vibration / heating device for the purpose of optimally rapid filling the recesses / crevices, typically less than 40 nanometers wide, effected in a preceding tunnel section into the dielectric upper layer of these successive semiconductor substrate sections moving therebetween, thereby successively maximizing the height of the intermediate upper gap section and a subsequent minimum realized height thereof during such vibration conditions of both this lower camshaft arrangement and this upper vibration / heating device.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that it comprises means such that, in the upper tunnel block thereof, the accommodation of a strip-shaped medium supply device for the purpose thereof in the upper part thereof the continuous mixing of the supplied combination of particles of a semiconductor substance with a high percentage of low-boiling liquid carrier medium and in its lower part the continuous mixing of this combination with a high percentage of high-boiling liquid carrier medium.

Tunnel arrangement according to Claim 27, characterized in that it is further designed and comprises means such that, in subsequent strip-shaped parts thereof, a first strip-shaped transducer arrangement is provided in the upper tunnel block for the uninterrupted occurrence of evaporation. of the low-boiling liquid carrier medium and underneath the subsequent second transducer arrangement the evaporation of the higher-boiling liquid carrier medium with, if necessary, behind such a strip-shaped discharge device for the evaporated liquid carrier medium again such a strip-shaped supply device for cleaning medium and the subsequent supply device for gaseous lock medium for keeping the subsequent bottom wall portion of this upper tunnel block cleaned.

29. Tunne1 arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied and comprises such means that, behind such a strip-shaped drain section in this upper tunnel block, the accommodation of a strip-shaped electric heating element for this purpose of melting such particles of a solid substance therewith to form a liquid layer thereof and thereafter incorporating a strip-shaped cooling device for forming a solid layer thereof.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied such that an increased starting portion of the upper gap immediately behind the strip-shaped medium supply portion of this medium supply device and wherein the subsequent portions of the upper slit, including at least such a vibrating / heating device, having a sharply increasing height thereof.

Tunnel arrangement according to Claim 26, characterized in that it is further designed and comprises means such that, after filling these crevices with such particles of a metal substance at least in a strip-shaped part thereof, of such a subsequent strip-shaped electric heating device an effected filling thereof with this substance in a liquid form thereof.

Tunnel arrangement according to Claim 31, characterized in that it is further designed and comprises means such that the inclusion of a strip-shaped cooling section of this block behind this electric heating device in the upper tunnel block forming therewith a solid metal layer while at least being filled with these crevices.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is furthermore designed and comprising such means that behind these two transducer arrangements in the upper tunnel block there is also the accommodation of a third vibration / heating device for the purpose of the subsequent occurrence of an equalization process of this applied layer of particles of such a solid substance, and this for the purpose of the occurrence of such a continuous heating process in the subsequent tunnel sections with the aid of such an electric heating device under the formation of a liquid layer of this solid substance, and in the subsequent cooling device, a cooling process of this liquid layer takes place to form a solid layer thereof.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprises means such that, as in its entrance side, the uninterrupted occurrence of the supply of a plastic film takes place on the top layer thereof. building up such a number of semiconductor layers that near its exit in its dielectric top layer, such metal-filled crevices are achieved that in a device behind its exit by dividing the semiconductor substrate continuously supplied therein parts the realization of semiconductor chips with a plastic bottom layer.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprises means such that, as in the entrance side thereof, the uninterrupted occurrence of the supply of a metal foil, thereby building up on its upper layer of such a number of semiconductor layers that near its exit in its dielectric top layer, such metal-filled crevices are effected that in a device behind its exit by dividing the semiconductor substrate which is typically continuously supplied therein. portions effecting semiconductor chips with a metal bottom layer thereof.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied such and comprising means such that therein also the possible application of several of the means of the semiconductor facility, - installation, - tunnel arrangements. and - devices which are laid down in the Dutch Patent Applications submitted simultaneously with this Patent Application and recently filed by the applicant regarding such a semiconductor tunnel arrangement.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprises such means that therein therein the possible use of all semiconductor treatments that are already generally used for wafers in semiconductor modules, also those which are already defined in Patents, if therein the mention in the text and Conclusions of the following: aj an individual semiconductor wafer or substrate; or b) an individual or non-individual semiconductor processing module.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprising means such that the means and methods described in this Patent Application can also be applied in these other semiconductor tunnel arrangements, which are indicated and described in these other Patent Applications of the applicant.

39. A method of a semiconductor tunnel arrangement, characterized in that, as in its upper tunnel block, the accommodation of a plurality of strip-shaped devices, which typically extend transversely of its central superimposed semiconductor treatment portion, during its operation. thereby continuously effecting a layer of particles of a solid semiconductor substance that is at least nanometer high on the subsequent, continuously moving semiconductor substrate portions.

A method according to Claim 39, characterized in that, with such a layer build-up, nanometer-sized particles of such a semiconductor substance are used.

A method according to Claim 40, characterized in that the use of particles of a metal substance is involved.

Method according to Claim 40, characterized in that the use of particles of a dielectric substance is involved.

43. A method as claimed in any one of the preceding Claims, characterized in that, as in this tunnel arrangement above the upper tunnel block thereof, the accommodation of a device for the purpose therein of producing such particles of a solid semiconductor substance, thereby in a strip-shaped underlying mixing device the continuous mixing of these particles takes place with typically a higher percentage of an evaporable liquid carrier medium which is also continuously supplied therein.

A method according to Claim 43, characterized in that, as in this device, the use of a subsequent mixing device, typically located below this first mixing device, comprises an uninterrupted supply of likewise evaporable low-boiling liquid carrier medium with a considerably higher percentage.

A method as claimed in any one of the preceding Claims, characterized in that, as for this purpose, in the upper tunnel block of this tunnel arrangement the accommodation of a strip-shaped medium supply device takes place therein, without interruption, of the combination of liquid carrier medium and particles of such carrier medium. a solid semiconductor substance including the upper portion thereof typically incorporating a cylindrical mixer, including a rotating mini camshaft arrangement, with mixing therein this combination of such particles and liquid carrier medium with a high percentage of liquid carrier medium, which is thereby typically the same as this first recording medium.

A method according to Claim 35, characterized in that like this mixing device is connected on its underside via typically a number of adjacent medium discharge channels to a second, likewise typically cylindrical mixing device, including also the incorporation of such a rotating camshaft arrangement and the continuous supply therein of a considerably higher percentage of typically the same liquid carrier medium, thereby discharging downwardly this combination of carrier medium and such particles of this semiconductor solid substance via a large number of side-by-side channels to the underlying strip-shaped supply portion of the upper gap of this tunnel arrangement above the semiconductor substitute portions which are also continuously moving during the operation of this tunnel arrangement.

47. A method according to any one of the preceding claims, characterized in that, as therein behind such a medium supply device, an exchangeable strip-shaped vibration / heating device included in its upper tunnel block, with the accommodation of a strip-shaped device in its compartment for the purpose of typically vaporizing the low-boiling liquid carrier medium therewith with a vibrating precipitate of these particles on the successive, continuous-moving semiconductor substrate portions, thereby continuously uninterrupted drainage of the upper slit with an increasing height thereof vaporous medium formed takes place to a subsequent discharge section of this upper tunnel block.

A method according to Claim 47, characterized in that the vibrating condition of such a vibrating / heating device is thereby maintained under a certain, advantageous profiling of the vibrations generated by it.

A method according to Claim 48, characterized in that the deposition of at least substantially exclusively these particles of solid substance takes place on these successive substrate sections at the location of such a vibrating / heating device.

50. A method as claimed in any one of the preceding Claims, characterized in that the precipitation of the solid substance and liquid carrier medium particles takes place on the subsequent semiconductor substrate portions, which are co-displaced by a continuous metal strip moving therethrough. and this with a decreasing height of this combination of this carrier medium and these particles.

A method according to Claim 49, characterized in that the precipitation of at least substantially exclusively these particles of the solid substance takes place on a liquid bonding substance, which may or may not be temporary, which is applied in a preceding tunnel section to a metal bottom layer.

52. A method according to any one of the preceding claims, characterized in that the precipitation of at least almost exclusively these particles of the solid substance takes place on the nanometer-high layer of a liquid adhesive substance which has been applied in a preceding tunnel section. on a dielectric top layer of the subsequent semiconductor substrate portions moving therethrough.

53. A method as claimed in any one of the preceding Claims, characterized in that such a precipitation of these particles of a solid substance takes place on a nanometer-high layer of a liquid adhesive substance which has been applied in a preceding tunnel section to a nanometer-high layer of a liquid adhesive substance, which is applied in a preceding tunnel section to a plastic top layer of the subsequent semiconductor substrate sections.

54. A method according to any one of the preceding claims, characterized in that, as behind such a strip-shaped evaporator liquid carrier medium discharge device, the incorporation into the upper tunnel block of a strip-shaped feed device for typical liquid cleaning medium, including its removal via this discharge device, thereby cleaning / keeping clean the intermediate lower wall part of the upper tunnel block, as it may also have taken place with a limited precipitation of such particles on this lower wall part.

55. A method according to Claim 54, characterized in that, as behind this supply device for cleaning medium, the accommodation of a strip-shaped supply device for the continuous supply of gaseous medium, including its discharge via this discharge device, thereby also maintaining such a clean condition of also the intermediate lower wall part of this block and also its functioning as a closing medium.

A method as claimed in any one of the preceding Claims, characterized in that, as behind such a first vibrating / heating device, the inclusion of a second vibrating / heating device in this upper tunnel block, thereby causing an equalization process to take place by vibrating it of this applied layer of such particles of a solid substance.

A method according to Claim 56, characterized in that thereby maintaining a minimum, micrometer height of the subsequent upper slit portions under such a device for such an equalizing process.

A method according to Claim 56 or 57, characterized in that, as again behind such a subsequent strip-shaped discharge section in the upper tunnel block for at least co-evaporated liquid carrier medium, by means of the continuous supply via such a strip-shaped supply device of cleaning medium and the uninterrupted supply of gaseous medium via the subsequent strip-shaped supply device, keeping such an intermediate upper gap portion cleaned.

59. A method according to any one of the preceding claims, characterized in that, as for such a strip-shaped vibration / evaporation device, the use of a strip-shaped transducer arrangement, maintaining a sufficiently high vibration and heating condition therein for the purpose of evaporating such a low-boiling liquid carrier medium.

A method according to any one of the preceding Claims, characterized in that, as for such a strip-shaped vibration / evaporation device, the use of a rotating camshaft arrangement and a heating device incorporated therein, thereby also maintaining typically a rapid downward displacement and a subsequent slow upward movement of the strip-shaped pressure wall portion thereof for the purpose of also achieving such an optimally flat condition of the precipitated particles of such a solid substance and, as in this pressure wall portion thereof, incorporating a thin-walled strip-shaped electric heater device, thereby also evaporating. the liquid carrier medium, also included below, under the continuous occurrence of such a deposition process of these particles for the purpose of finally building up a layer of these particles on the subsequent semiconductor substrate portions moving along it.

A method according to any one of the preceding Claims, characterized in that, as in the sub-tunnel block, the incorporation of a rotating lower camshaft arrangement under such a vibrating / heating device, which is incorporated in the upper tunnel block, continuously moves it up and down therewith of the strip-shaped pressure wall portion thereof and therewith of the subsequent semiconductor substrate portions moving thereabove.

62. A method according to Claim 61, characterized in that, as this camshaft arrangement comprises a number of consecutive cams, which typically consist of a relatively short portion and a relatively long portion, while rotating it with the aid of these consecutive cams. subsequent up and down movement of this pressure wall part takes place with the maintenance of a rapid upward and subsequent slow down movement thereof and also with the aid of this pressure wall part the continuous up and down movement of the continuous, semiconductor substrate portions moving thereabove.

A method according to Claim 62, characterized in that, as in its upper tunnel block, the accommodation of a strip-shaped vibrator / heating device, the triHi8s thereof typically have a fast downward and a subsequent slow upward displacement .

A method according to Claim 63, characterized in that, as at least partly in its upper tunnel block, the inclusion of a strip-shaped vibrator / heating device, thereby thereby also optimally rapid filling of the effects achieved in a preceding tunnel section, is typically less then 40 nanometer wide recesses / crevices in the dielectric upper layer of these successive semiconductor substrate portions moving alongside it, with subsequent the effecting of a maximum height of the intermediate upper gap and a subsequent effecting of a minimum height thereof during such vibration conditions of both this lower camshaft arrangement and this upper vibration / heating device.

65. A method as claimed in any one of the preceding Claims, characterized in that, as in its upper tunnel block, the incorporation of a strip-shaped medium supply device, in the upper part thereof, continuous mixing of the supplied combination of particles of a semiconductor substance with a high percentage of low boiling boiling liquid carrier medium and in its lower part the continuous mixing of this combination with a high percentage of higher boiling liquid carrier medium.

A method according to Claim 65, characterized in that, as in subsequent strip-shaped portions thereof, the incorporation of a first strip-shaped transducer arrangement, the consequent continuous finding of evaporation of the low-boiling liquid carrier medium, and below it thereunder. following second transducer arrangement the evaporation of the higher-boiling liquid carrier medium therewith with, as required, behind such a strip-shaped discharge device for the evaporated liquid carrier medium, again such a strip-shaped supply device for cleaning medium and the next supply device for gaseous lock medium, keeping the subsequent bottom wall portion of this upper tunnel block cleaned therewith.

A method according to any one of the preceding claims, characterized in that, as behind such a strip-shaped drain section in this upper tunnel block, the inclusion of a strip-shaped electric heating element, thereby melting such particles of a solid substance to form a liquid layer thereof and, as behind it, the accommodation of a strip-shaped cooling device, thereby forming a solid layer thereof by cooling this liquid layer.

68. A method as claimed in any one of the preceding Claims, characterized in that, as in this case, the use of a raised starting portion of the upper gap immediately behind the strip-shaped medium feeding portion of this medium feeding device and the subsequent portions of the upper gap below at least such a vibrating / heating device also have a strongly increasing height thereof, as a result of which an optimum discharge of the evaporated liquid carrier medium is guaranteed.

69. A method according to Claim 68, characterized in that as after the filling of the machined crevices with such particles of a metal substance at least partly takes place in a strip-shaped part thereof, thereby with the aid of such a subsequent strip-shaped electrical heating device an effected filling thereof with this substance in a liquid form thereof.

70. A method according to claim 69, characterized in that, as behind this electric heating device, the inclusion of a strip-shaped cooling section of this block, thereby forming a solid metal layer with it being at least partly filled with these crevices .

A method as claimed in any one of the preceding Claims, characterized in that, as behind these two transducer arrangements in the upper tunnel block, the incorporation of a third transducer arrangement, thereby again taking place an equalization process of the applied layer of particles of such particles. a solid substance, and in the subsequent tunnel sections the occurrence of such a continuous heating process with the aid of such an electric heating device to form a liquid layer of this solid substance, and in the subsequent cooling device a cooling process of this liquid layer takes place to form a solid layer thereof.

72. A method according to any one of the preceding claims, characterized in that, as in the entrance to this tunnel, the supply of a plastic film takes place uninterruptedly, the top layer thereof taking place the construction of such a number of semiconductor layers that near its exit in its effected dielectric upper layer, there are realized such metal-filled crevices that in a device behind its exit, by dividing the continuously supplied semiconductor substrate portions, the establishment of semiconductor chips having a plastic bottom layer.

73. A method as claimed in any one of the preceding Claims, characterized in that, as in the entrance side of this tunnel arrangement, the supply of a metal foil takes place uninterruptedly, thereby building up on its upper layer such a number of semiconductor layers that its output in its dielectric upper layer, such metal-filled crevices are effected that in a device behind its output, the semiconductor substrate portions continuously supplied therein are effected to produce semiconductor chips with a metal lower layer of it.

74. A method according to any one of the preceding Claims, characterized in that in this tunnel arrangement also the possible application of several of the methods of the semiconductor facility, - installation, - tunnel arrangements and devices, which take place on 23 June and July 6th and currently Dutch Patent Applications filed by the applicant, regarding such a semiconductor tunnel arrangement.

A method according to Claim 74, characterized in that the possible use of all semiconductor treatments of wafers in semiconductor modules, also those already described in Patents, is included in the text of the following: : a) an individual semiconductor wafer or substrate; or b) an individual or non-individual semiconductor processing module.

A method according to any one of the preceding Claims, characterized in that the methods described in this Patent Application are also applicable to these other semiconductor tunnel arrangements, which are indicated and described in these other Patent applications of the applicant.